Overview
The VNP10N07FI-E is a monolithic device developed by STMicroelectronics using their VIPower Technology. This fully protected power MOSFET is designed to replace standard power MOSFETs in DC to 50 KHz applications. It features built-in thermal shut-down, linear current limitation, and overvoltage clamp, which protect the device in harsh environments. The device also provides diagnostic feedback through the input pin, allowing for the detection of fault conditions.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source Voltage (Vds) | Internally Clamped | V |
| Input Voltage (Vin) | 18 | V |
| Drain Current (Id) | Internally Limited | A |
| Electrostatic Discharge (Vesd) | 2000 | V |
| Total Dissipation at Tc = 25°C (Ptot) | 50 | W |
| Operating Junction Temperature (Tj) | Internally Limited | °C |
| Case Operating Temperature (Tc) | Internally Limited | °C |
| Storage Temperature (Tstg) | -55 to 150 | °C |
| Thermal Resistance Junction-case (Rthj-case) | 4 | °C/W |
| Thermal Resistance Junction-ambient (Rthj-amb) | 62.5 | °C/W |
| Drain-source Clamp Voltage (VCLAMP) | 60-80 | V |
| Input Threshold Voltage (VIN(th)) | 0.8-3 | V |
| Static Drain-source On Resistance (RDS(on)) | 0.1-0.14 | Ω |
Key Features
- Standard TO-220 package
- Compatible with standard power MOSFET
- ESD protection according to the Human Body model
- Diagnostic feedback through input pin
- Linear current limitation
- Short circuit protection
- Thermal shut-down
- Low current drawn from input pin
- Direct access to the gate of the power MOSFET (analog driving)
- Integrated clamp
- Overvoltage clamp protection internally set at 70V
- Ability to be driven from a TTL Logic circuit
Applications
The VNP10N07FI-E is suitable for various applications requiring robust and protected power MOSFETs, such as in automotive systems, industrial control, and power management circuits. It is particularly useful in environments where high reliability and protection against overvoltage, short circuits, and thermal overload are critical.
Q & A
- What is the VNP10N07FI-E used for?
The VNP10N07FI-E is used as a replacement for standard power MOSFETs in DC to 50 KHz applications, providing enhanced protection and reliability. - What are the key protection features of the VNP10N07FI-E?
The device features thermal shut-down, linear current limitation, overvoltage clamp, and short circuit protection. - How does the VNP10N07FI-E provide diagnostic feedback?
The device provides diagnostic feedback through the input pin, allowing the detection of fault conditions such as overtemperature by monitoring the voltage at the input pin. - What is the maximum drain-source voltage (Vds) for the VNP10N07FI-E?
The drain-source voltage is internally clamped. - Can the VNP10N07FI-E be driven by a TTL Logic circuit?
Yes, the device can be driven from a TTL Logic circuit with a small increase in RDS(on). - What is the operating junction temperature range for the VNP10N07FI-E?
The operating junction temperature is internally limited. - What is the storage temperature range for the VNP10N07FI-E?
The storage temperature range is -55 to 150°C. - What package types are available for the VNP10N07FI-E?
The device is available in standard TO-220 packages. - Does the VNP10N07FI-E have ESD protection?
Yes, it has ESD protection according to the Human Body model. - How does the linear current limitation work in the VNP10N07FI-E?
The linear current limitation circuit limits the drain current Id to Ilim, regardless of the input pin voltage, and operates in the linear region if the limiter is active.
