Overview
The VNB10N07TR-E is a monolithic power MOSFET device produced by STMicroelectronics, utilizing the VIPower M0 Technology. This device is designed to replace standard power MOSFETs in applications ranging from DC to 50 KHz. It integrates several protection features and advanced functionalities, making it suitable for a variety of power management and switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source Voltage (Vds) | Internally Clamped | V |
| Input Voltage (Vin) | 18 | V |
| Drain Current (Id) | Internally Limited to 10 A | A |
| Electrostatic Discharge (Vesd) | 2000 | V |
| Total Dissipation at Tc = 25°C (Ptot) | 50 W (ISOWATT220), 31 W (PowerSO-10), 9.5 W (D2PAK) | W |
| Operating Junction Temperature (Tj) | Internally Limited | °C |
| Case Operating Temperature (Tc) | Internally Limited | °C |
| Storage Temperature (Tstg) | -55 to 150 | °C |
| Thermal Resistance Junction-case (Rthj-case) | 4 °C/W (ISOWATT220), 2.5 °C/W (PowerSO-10), 13 °C/W (D2PAK) | °C/W |
| Thermal Resistance Junction-ambient (Rthj-amb) | 62.5 °C/W (ISOWATT220), 50 °C/W (PowerSO-10), 100 °C/W (D2PAK) | °C/W |
| Static Drain-source On Resistance (RDS(on)) | 0.1 Ω (Vin = 10 V, ID = 5 A) | Ω |
| Drain-source Clamp Voltage (VCLAMP) | 60 to 80 V | V |
| Input Threshold Voltage (VIN(th)) | 0.8 to 3 V | V |
Key Features
- Overvoltage Clamp Protection: Internally set at 70V, providing rugged avalanche characteristics and enhanced energy handling capability, especially important for driving inductive loads.
- Linear Current Limiter Circuit: Limits the drain current to a specified value (Ilim) regardless of the input pin voltage, ensuring safe operation in high current conditions.
- Overtemperature and Short Circuit Protection: Automatically shuts down the device at a junction temperature of 150°C and restarts when the temperature falls below 135°C.
- Status Feedback: Provides diagnostic feedback through the input pin in case of an overtemperature fault, allowing for easy fault detection.
- ESD Protection: Compliant with the Human Body Model, ensuring robustness against electrostatic discharges.
- TTL Logic Compatibility: Can be driven from TTL logic circuits with minimal increase in RDS(on).
- Direct Access to Gate: The input pin is electrically connected to the gate of the internal power MOSFET, allowing it to behave like a standard power MOSFET.
Applications
The VNB10N07TR-E is suitable for a wide range of applications, including:
- Power management in automotive and industrial systems.
- Switching applications from DC to 50 KHz.
- Driving inductive loads such as motors, solenoids, and relays.
- Protection circuits in high-reliability environments.
- General-purpose power switching where advanced protection features are required.
Q & A
- What is the maximum drain-source voltage for the VNB10N07TR-E?
The maximum drain-source voltage (Vds) is internally clamped and protected up to 70V.
- What is the typical static drain-source on resistance (RDS(on)) of the VNB10N07TR-E?
The typical RDS(on) is 0.1 Ω when Vin = 10 V and ID = 5 A.
- Does the VNB10N07TR-E have overtemperature protection?
- How does the VNB10N07TR-E provide status feedback in case of a fault?
In case of an overtemperature fault, the device provides status feedback through the input pin, which is connected to ground via an equivalent resistance of 100 Ω.
- Is the VNB10N07TR-E compatible with TTL logic circuits?
- What is the maximum storage temperature for the VNB10N07TR-E?
- What type of ESD protection does the VNB10N07TR-E have?
- Can the VNB10N07TR-E be used in high-frequency applications?
- What are the key protection features of the VNB10N07TR-E?
- How does the linear current limiter circuit work in the VNB10N07TR-E?
