STTH806DIRG
  • Share:

STMicroelectronics STTH806DIRG

Manufacturer No:
STTH806DIRG
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE GEN PURP 600V 8A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH806DIRG is a high-performance ultrafast diode produced by STMicroelectronics. It utilizes the ST Turbo2 600 V technology, making it highly suitable for applications in switching power supplies and industrial environments. This device is known for its ultrafast switching capabilities, low thermal resistance, and low reverse current, which reduce conduction and switching losses. The STTH806DIRG is packaged in an insulated TO-220AC package, ensuring high reliability and efficiency in various power management systems.

Key Specifications

ParameterValueUnit
VRRM (Repetitive Peak Reverse Voltage)600V
IF(RMS) (RMS Forward Current)24A
IF(AV) (Average Forward Current)8A
IFSM (Surge Non-Repetitive Forward Current)90A
Tstg (Storage Temperature Range)-65 to +175°C
Tj (Maximum Operating Junction Temperature)175°C
Vf (Forward Voltage Drop)1.85V
trr (Reverse Recovery Time)35ns
Ir (Reverse Leakage Current)8µA
Rth(j-c) (Junction to Case Thermal Resistance)4°C/W

Key Features

  • Ultrafast switching
  • Low thermal resistance
  • Low reverse current
  • Insulated package (TO-220AC Ins) with insulated voltage of 2500 V RMS and typical package capacitance of 7 pF
  • Reduces conduction and switching losses

Applications

The STTH806DIRG is specifically designed for use in switching power supplies and various industrial applications. Its ultrafast switching and low thermal resistance make it an ideal choice for high-efficiency power management systems.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the STTH806DIRG?
    The maximum repetitive peak reverse voltage is 600 V.
  2. What is the average forward current rating of the STTH806DIRG?
    The average forward current rating is 8 A.
  3. What is the maximum operating junction temperature of the STTH806DIRG?
    The maximum operating junction temperature is 175°C.
  4. What is the typical forward voltage drop of the STTH806DIRG?
    The typical forward voltage drop is 1.85 V.
  5. What is the reverse recovery time of the STTH806DIRG?
    The reverse recovery time is 35 ns.
  6. What type of package does the STTH806DIRG come in?
    The STTH806DIRG comes in an insulated TO-220AC package.
  7. What is the insulated voltage of the TO-220AC package?
    The insulated voltage of the TO-220AC package is 2500 V RMS.
  8. What are the primary applications of the STTH806DIRG?
    The primary applications include switching power supplies and industrial environments.
  9. How does the STTH806DIRG reduce losses in power management systems?
    The STTH806DIRG reduces conduction and switching losses due to its ultrafast switching and low thermal resistance.
  10. What is the storage temperature range for the STTH806DIRG?
    The storage temperature range is -65 to +175°C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.85 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):55 ns
Current - Reverse Leakage @ Vr:8 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Insulated, TO-220AC
Supplier Device Package:TO-220AC ins
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$3.04
215

Please send RFQ , we will respond immediately.

Same Series
STTH806G-TR
STTH806G-TR
DIODE GEN PURP 600V 8A D2PAK
STTH806DIRG
STTH806DIRG
DIODE GEN PURP 600V 8A TO220AC

Similar Products

Part Number STTH806DIRG STTH8R06DIRG STTH8L06DIRG
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V
Current - Average Rectified (Io) 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.85 V @ 8 A 2.9 V @ 8 A 1.3 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 55 ns 45 ns 105 ns
Current - Reverse Leakage @ Vr 8 µA @ 600 V 30 µA @ 600 V 8 µA @ 600 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-2 Insulated, TO-220AC TO-220-2 Insulated, TO-220AC TO-220-2 Insulated, TO-220AC
Supplier Device Package TO-220AC ins TO-220AC ins TO-220AC ins
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
BAS20WTHE3-TP
BAS20WTHE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT323
BAS521-7
BAS521-7
Diodes Incorporated
DIODE GEN PURP 300V 250MA SOD523
MURA160T3G
MURA160T3G
onsemi
DIODE GEN PURP 600V 1A SMA
BAS16-E3-08
BAS16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
BAV199/ZL215
BAV199/ZL215
Nexperia USA Inc.
BAV199W - RECTIFIER DIODE
1N5711UR-1E3
1N5711UR-1E3
Microchip Technology
SCHOTTKY BARRIER DIODE MELF SURF
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
NRVBD360VT4G
NRVBD360VT4G
onsemi
DIODE SCHOTTKY 60V 3A DPAK
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB

Related Product By Brand

SMA6J8.5CA-TR
SMA6J8.5CA-TR
STMicroelectronics
TVS DIODE 8.5VWM 18.7VC SMA
STPS30H100CT
STPS30H100CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 100V TO220
BD438
BD438
STMicroelectronics
TRANS PNP 45V 4A SOT32-3
STL6P3LLH6
STL6P3LLH6
STMicroelectronics
MOSFET P-CH 30V 6A POWERFLAT
M41T83SQA6F
M41T83SQA6F
STMicroelectronics
IC RTC CLK/CALENDAR I2C 16-QFN
STM32F334R8T7
STM32F334R8T7
STMicroelectronics
IC MCU 32BIT 64KB FLASH 64LQFP
STM32G474MET6
STM32G474MET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 80LQFP
TDA7360HS
TDA7360HS
STMicroelectronics
IC AMP AB MONO/STER 11MULTIWATT
M24512-DRDW3TP/K
M24512-DRDW3TP/K
STMicroelectronics
IC EEPROM 512KBIT I2C 8TSSOP
M24C32-RMN6TP
M24C32-RMN6TP
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
M48Z02-70PC1
M48Z02-70PC1
STMicroelectronics
IC NVSRAM 16KBIT PAR 24PCDIP
TDA7708LX32
TDA7708LX32
STMicroelectronics
ADD INFOTAINMENT