STTH8L06DIRG
  • Share:

STMicroelectronics STTH8L06DIRG

Manufacturer No:
STTH8L06DIRG
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE GEN PURP 600V 8A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH8L06DIRG, produced by STMicroelectronics, is a high-performance ultrafast diode utilizing ST Turbo2 600 V technology. This device is specifically designed for use as a boost diode in discontinuous or critical mode power factor corrections and as a free wheeling diode in power supplies and other power switching applications.

Key Specifications

Parameter Value Unit
VRRM (Repetitive peak reverse voltage) 600 V
IF(AV) (Average forward current) 8 A
IF(RMS) (Forward rms current) 30 A
IFSM (Surge non repetitive forward current) 120 A
VF (Typical forward voltage drop) 0.85 V
trr (Typical reverse recovery time) 75 ns
Tj (Operating junction temperature range) -40 to 175 °C
Tstg (Storage temperature range) -65 to 175 °C
Package TO-220AC Insulated
Package insulation voltage 2500 V rms

Key Features

  • Ultrafast switching
  • Low reverse recovery current
  • Low thermal resistance
  • Reduces switching and conduction losses
  • High package insulation voltage (TO-220AC Ins: 2500 V rms, TO-220FPAC: 2000 V DC)

Applications

The STTH8L06DIRG is suited for various power management applications, including:

  • Boost diode in discontinuous or critical mode power factor corrections
  • Free wheeling diode in power supplies
  • Other power switching applications
  • Industrial power systems

Q & A

  1. What is the maximum repetitive peak reverse voltage of the STTH8L06DIRG?

    The maximum repetitive peak reverse voltage is 600 V.

  2. What is the average forward current rating of the STTH8L06DIRG?

    The average forward current rating is 8 A.

  3. What is the typical forward voltage drop of the STTH8L06DIRG?

    The typical forward voltage drop is 0.85 V.

  4. What is the typical reverse recovery time of the STTH8L06DIRG?

    The typical reverse recovery time is 75 ns.

  5. What are the operating junction temperature limits for the STTH8L06DIRG?

    The operating junction temperature range is -40 to 175 °C.

  6. What is the storage temperature range for the STTH8L06DIRG?

    The storage temperature range is -65 to 175 °C.

  7. What are the common applications of the STTH8L06DIRG?

    Common applications include boost diodes in power factor corrections, free wheeling diodes in power supplies, and other power switching applications.

  8. What package types are available for the STTH8L06DIRG?

    The device is available in TO-220AC Insulated, TO-220FPAC, and D2PAK packages.

  9. What is the package insulation voltage for the TO-220AC Insulated package?

    The package insulation voltage for the TO-220AC Insulated package is 2500 V rms.

  10. Does the STTH8L06DIRG reduce switching and conduction losses?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.3 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):105 ns
Current - Reverse Leakage @ Vr:8 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Insulated, TO-220AC
Supplier Device Package:TO-220AC ins
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

-
406

Please send RFQ , we will respond immediately.

Same Series
STTH8L06G-TR
STTH8L06G-TR
DIODE GEN PURP 600V 8A D2PAK
STTH8L06FP
STTH8L06FP
DIODE GEN PURP 600V 8A TO220FP
STTH8L06DIRG
STTH8L06DIRG
DIODE GEN PURP 600V 8A TO220AC

Similar Products

Part Number STTH8L06DIRG STTH8R06DIRG STTH806DIRG
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V
Current - Average Rectified (Io) 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 8 A 2.9 V @ 8 A 1.85 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 105 ns 45 ns 55 ns
Current - Reverse Leakage @ Vr 8 µA @ 600 V 30 µA @ 600 V 8 µA @ 600 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-2 Insulated, TO-220AC TO-220-2 Insulated, TO-220AC TO-220-2 Insulated, TO-220AC
Supplier Device Package TO-220AC ins TO-220AC ins TO-220AC ins
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

1N4148UR-1
1N4148UR-1
Microchip Technology
DIODE GEN PURP 75V 200MA DO213AA
1N4007-E3/53
1N4007-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
1N4148WSF-7
1N4148WSF-7
Diodes Incorporated
DIODE GEN PURP 100V 250MA SOD323
RB521S30T5G
RB521S30T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
STTH1R06A
STTH1R06A
STMicroelectronics
DIODE GEN PURP 600V 1A SMA
MBR1100RLG
MBR1100RLG
onsemi
DIODE SCHOTTKY 100V 1A AXIAL
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
NSR0340P2T5G
NSR0340P2T5G
onsemi
DIODE SCHOTTKY 40V 200MA SOD923
BAS16WS-HE3-18
BAS16WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
BAV21W-HE3-18
BAV21W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
BYC10X-600PQ
BYC10X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 10A TO220F
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

STF140N6F7
STF140N6F7
STMicroelectronics
MOSFET N-CH 60V 70A TO220FP
STP40NF03L
STP40NF03L
STMicroelectronics
MOSFET N-CH 30V 40A TO220AB
STD10NF10T4
STD10NF10T4
STMicroelectronics
MOSFET N-CH 100V 13A DPAK
TDA7418
TDA7418
STMicroelectronics
IC AUDIO SIGNAL PROCESSOR 20SO
M41T83SQA6F
M41T83SQA6F
STMicroelectronics
IC RTC CLK/CALENDAR I2C 16-QFN
STM32F078VBH6
STM32F078VBH6
STMicroelectronics
IC MCU 32BIT 128KB FLSH 100UFBGA
M27C4002-80C6
M27C4002-80C6
STMicroelectronics
IC EPROM 4MBIT PARALLEL 44PLCC
M27C801-100F6
M27C801-100F6
STMicroelectronics
IC EPROM 8MBIT PARALLEL 32CDIP
M27C4001-12F6
M27C4001-12F6
STMicroelectronics
IC EPROM 4MBIT PARALLEL 32CDIP
VIPER27LDTR
VIPER27LDTR
STMicroelectronics
IC OFFLINE SWITCH FLYBACK 16SO
STP24DP05BTR
STP24DP05BTR
STMicroelectronics
IC LED DRIVER LINEAR 80MA 48TQFP
ISM330DHCXTR
ISM330DHCXTR
STMicroelectronics
INEMO INERTIAL MODULE: ALWAYS-ON