STTH8L06G-TR
  • Share:

STMicroelectronics STTH8L06G-TR

Manufacturer No:
STTH8L06G-TR
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 8A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH8L06G-TR, produced by STMicroelectronics, is a high-performance ultrafast diode utilizing ST Turbo2 600 V technology. This device is specifically designed for use as a boost diode in discontinuous or critical mode power factor corrections and as a free-wheeling diode in power supplies and other power switching applications.

Key Specifications

Parameter Value Unit
Repetitive Peak Reverse Voltage (VRRM) 600 V
Average Forward Current (IF(AV)) 8 A
Forward RMS Current (IF(RMS)) 30 A
Surge Non-Repetitive Forward Current (IFSM) 120 A
Reverse Leakage Current (IR) 200 µA µA
Forward Voltage Drop (VF) 1.3 V
Reverse Recovery Time (trr) 75 ns ns
Junction Temperature (Tj) -40 to 175 °C
Storage Temperature Range (Tstg) -65 to 175 °C
Junction to Case Thermal Resistance (Rth(j-c)) 2.5 °C/W

Key Features

  • Ultrafast switching
  • Low reverse recovery current
  • Low thermal resistance
  • Reduces switching and conduction losses
  • Package insulation voltage:
    • TO-220AC: 2500 V rms
    • TO-220FPAC: 2000 V DC

Applications

The STTH8L06G-TR is suitable for various power management applications, including:

  • Boost diode in discontinuous or critical mode power factor corrections
  • Free-wheeling diode in power supplies
  • Other power switching applications
  • Industrial power systems

Q & A

  1. What is the maximum repetitive peak reverse voltage of the STTH8L06G-TR?

    The maximum repetitive peak reverse voltage (VRRM) is 600 V.

  2. What is the average forward current rating of the STTH8L06G-TR?

    The average forward current (IF(AV)) is 8 A.

  3. What is the typical forward voltage drop of the STTH8L06G-TR?

    The typical forward voltage drop (VF) is 1.3 V at 8 A.

  4. What is the reverse recovery time of the STTH8L06G-TR?

    The reverse recovery time (trr) is typically 75 ns.

  5. What are the package options available for the STTH8L06G-TR?

    The device is available in TO-220AC, TO-220FPAC, and D2PAK packages.

  6. What is the junction temperature range of the STTH8L06G-TR?

    The operating junction temperature range is -40 to 175 °C.

  7. What is the storage temperature range for the STTH8L06G-TR?

    The storage temperature range is -65 to 175 °C.

  8. Is the STTH8L06G-TR RoHS compliant?
  9. What are the typical applications of the STTH8L06G-TR?

    The device is typically used as a boost diode in power factor corrections and as a free-wheeling diode in power supplies and other power switching applications.

  10. How does the STTH8L06G-TR reduce losses in power systems?

    The device reduces switching and conduction losses due to its ultrafast switching and low reverse recovery current characteristics.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.3 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):105 ns
Current - Reverse Leakage @ Vr:8 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D2PAK
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$2.19
23

Please send RFQ , we will respond immediately.

Same Series
STTH8L06G-TR
STTH8L06G-TR
DIODE GEN PURP 600V 8A D2PAK
STTH8L06FP
STTH8L06FP
DIODE GEN PURP 600V 8A TO220FP
STTH8L06DIRG
STTH8L06DIRG
DIODE GEN PURP 600V 8A TO220AC

Similar Products

Part Number STTH8L06G-TR STTH8R06G-TR STTH806G-TR
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V
Current - Average Rectified (Io) 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 8 A 2.9 V @ 8 A 1.85 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 105 ns 45 ns 55 ns
Current - Reverse Leakage @ Vr 8 µA @ 600 V 30 µA @ 600 V 8 µA @ 600 V
Capacitance @ Vr, F - - -
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK D2PAK D2PAK
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

BAT54WS_R1_00001
BAT54WS_R1_00001
Panjit International Inc.
SOD-323, SKY
BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
STPS160AFN
STPS160AFN
STMicroelectronics
60 V, 1 A POWER SCHOTTKY RECTIFI
MBRD835LG
MBRD835LG
onsemi
DIODE SCHOTTKY 35V 8A DPAK
BAS21WQ-7-F
BAS21WQ-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
PMEG6020ELR-QX
PMEG6020ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
BAT54T
BAT54T
onsemi
DIODE SCHOTTKY 30V 200MA SOT523
1N4002G R0G
1N4002G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

Z0409MF 1AA2
Z0409MF 1AA2
STMicroelectronics
TRIAC SENS GATE 600V 4A TO202
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STP6NK90ZFP
STP6NK90ZFP
STMicroelectronics
MOSFET N-CH 900V 5.8A TO220FP
STM32L052R8H6
STM32L052R8H6
STMicroelectronics
IC MCU 32BIT 64KB FLASH 64TFBGA
E-L9637D
E-L9637D
STMicroelectronics
IC TRANSCEIVER 1/1 8SO
TDA2822M
TDA2822M
STMicroelectronics
IC AMP AB MONO/STER 2W 8MINI DIP
TDA7491LP
TDA7491LP
STMicroelectronics
IC AMP CLSS D STER 5W POWERSSO36
VN5770AKP-E
VN5770AKP-E
STMicroelectronics
IC MOTOR DRIVER PAR 28SO
VNQ830PEP-E
VNQ830PEP-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
L9779WDM
L9779WDM
STMicroelectronics
HI-QUAD 64 14X14 POW
L79L15ACD13TR
L79L15ACD13TR
STMicroelectronics
IC REG LINEAR -15V 100MA 8SO
TDA7708LX32
TDA7708LX32
STMicroelectronics
ADD INFOTAINMENT