STTH806G-TR
  • Share:

STMicroelectronics STTH806G-TR

Manufacturer No:
STTH806G-TR
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 8A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH806G-TR is a high-performance ultrafast diode produced by STMicroelectronics. It utilizes the ST Turbo2 600 V technology, making it particularly suited for applications in switching power supplies and industrial environments. This diode is known for its ultrafast switching capabilities, low thermal resistance, and low reverse current, which reduce conduction and switching losses. The device is available in various packages, including the D2PAK and TO-220AC Insulated packages, ensuring versatility in design and implementation.

Key Specifications

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 8 A
Voltage - Forward (Vf) (Max) @ If 1.85V @ 8A V
Reverse Recovery Time (trr) 55ns ns
Reverse Leakage Current @ Vr 8µA @ 600V µA
Maximum Operating Junction Temperature 175°C °C
Package D2PAK, TO-220AC Ins -
Mounting Type Surface Mount -
Moisture Sensitivity Level (MSL) 1 (Unlimited) -

Key Features

  • Ultrafast Switching: The STTH806G-TR features ultrafast switching, which is crucial for high-frequency applications.
  • Low Thermal Resistance: It has low thermal resistance, enhancing heat dissipation and overall device reliability.
  • Low Reverse Current: The diode exhibits low reverse current, reducing leakage and improving efficiency.
  • Insulated Package: Available in insulated packages such as TO-220AC Ins, with an insulated voltage of 2500 V RMS and typical package capacitance of 7 pF.
  • Reduced Conduction and Switching Losses: The device is designed to minimize conduction and switching losses, making it highly efficient in operation.

Applications

The STTH806G-TR is specifically designed for use in:

  • Switching Power Supplies: Its ultrafast switching and low thermal resistance make it ideal for high-efficiency power supply designs.
  • Industrial Applications: Suitable for various industrial environments where high reliability and performance are required.

Q & A

  1. What is the maximum reverse voltage of the STTH806G-TR?

    The maximum reverse voltage (Vr) is 600 V.

  2. What is the average rectified current (Io) of the STTH806G-TR?

    The average rectified current (Io) is 8 A.

  3. What is the forward voltage drop (Vf) at 8 A for the STTH806G-TR?

    The forward voltage drop (Vf) at 8 A is 1.85 V.

  4. What is the reverse recovery time (trr) of the STTH806G-TR?

    The reverse recovery time (trr) is 55 ns.

  5. What is the maximum operating junction temperature of the STTH806G-TR?

    The maximum operating junction temperature is 175°C.

  6. In which packages is the STTH806G-TR available?

    The STTH806G-TR is available in D2PAK and TO-220AC Ins packages.

  7. What is the moisture sensitivity level (MSL) of the STTH806G-TR?

    The moisture sensitivity level (MSL) is 1 (Unlimited).

  8. What are the key features of the STTH806G-TR?

    The key features include ultrafast switching, low thermal resistance, low reverse current, and reduced conduction and switching losses.

  9. In which applications is the STTH806G-TR commonly used?

    The STTH806G-TR is commonly used in switching power supplies and industrial applications.

  10. What is the insulated voltage of the TO-220AC Ins package?

    The insulated voltage of the TO-220AC Ins package is 2500 V RMS.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.85 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):55 ns
Current - Reverse Leakage @ Vr:8 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D2PAK
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$2.50
105

Please send RFQ , we will respond immediately.

Same Series
STTH806D
STTH806D
DIODE GEN PURP 600V 8A TO220AC
STTH806G-TR
STTH806G-TR
DIODE GEN PURP 600V 8A D2PAK

Similar Products

Part Number STTH806G-TR STTH8L06G-TR STTH8R06G-TR STTH802G-TR STTH803G-TR
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 200 V 300 V
Current - Average Rectified (Io) 8A 8A 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.85 V @ 8 A 1.3 V @ 8 A 2.9 V @ 8 A 1.05 V @ 8 A 1.25 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 55 ns 105 ns 45 ns 30 ns 35 ns
Current - Reverse Leakage @ Vr 8 µA @ 600 V 8 µA @ 600 V 30 µA @ 600 V 6 µA @ 200 V 20 µA @ 300 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK D2PAK D2PAK D2PAK D2PAK
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
STTH5L06RL
STTH5L06RL
STMicroelectronics
DIODE GEN PURP 600V 5A DO201AD
BAS16-E3-08
BAS16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
PMEG2020EH,115
PMEG2020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 2A SOD123F
BAS21Q-7-F
BAS21Q-7-F
Diodes Incorporated
DIODE GP SW SOT23
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
BAS16T-TP
BAS16T-TP
Micro Commercial Co
DIODE GEN PURP 85V 75MA SOT523
BAS16XV2T1
BAS16XV2T1
onsemi
DIODE SWITCH 200MA 75V SOD523
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
PMEG3005AEA/ZLX
PMEG3005AEA/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 30V 500MA SC76
PMEG6010CEJ/ZLX
PMEG6010CEJ/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A SC90
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35

Related Product By Brand

ACST6-7SR
ACST6-7SR
STMicroelectronics
TRIAC SENS GATE 700V 6A I2PAK
STD10NF10T4
STD10NF10T4
STMicroelectronics
MOSFET N-CH 100V 13A DPAK
M41T83SQA6F
M41T83SQA6F
STMicroelectronics
IC RTC CLK/CALENDAR I2C 16-QFN
STM32L412CBU6
STM32L412CBU6
STMicroelectronics
IC MCU 32BIT 128KB FLSH 48UFQFPN
STM32F205RBT6TR
STM32F205RBT6TR
STMicroelectronics
IC MCU 32BIT 128KB FLASH 64LQFP
STM32F072RBH6
STM32F072RBH6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 64UFBGA
STM8AF6246TDSSSX
STM8AF6246TDSSSX
STMicroelectronics
IC MCU 8BIT 16KB FLASH 32LQFP
TS274AIPT
TS274AIPT
STMicroelectronics
IC CMOS 4 CIRCUIT 14TSSOP
M95512-WMN6P
M95512-WMN6P
STMicroelectronics
IC EEPROM 512KBIT SPI 16MHZ 8SO
M27C2001-10F1
M27C2001-10F1
STMicroelectronics
IC EPROM 2MBIT PARALLEL 32CDIP
VIPER27LDTR
VIPER27LDTR
STMicroelectronics
IC OFFLINE SWITCH FLYBACK 16SO
L78M15CDT-TR
L78M15CDT-TR
STMicroelectronics
IC REG LINEAR 15V 500MA DPAK