STTH4R02S
  • Share:

STMicroelectronics STTH4R02S

Manufacturer No:
STTH4R02S
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 4A SMC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH4R02S, produced by STMicroelectronics, is an ultrafast recovery diode designed using ST's 200 V planar Pt doping technology. This device is particularly suited for switching mode base drive and transistor circuits. It is available in DPAK, SMB, and SMC packages, making it versatile for various applications. The STTH4R02S is intended for use in low voltage, high frequency inverters, freewheeling, and polarity protection circuits.

Key Specifications

ParameterValueUnit
Repetitive Peak Reverse Voltage (VRRM)200V
Average Forward Current (IF(AV))4A
Forward RMS Current (IF(RMS))10 (DPAK), 7 (SMB/SMC)A
Surge Non-Repetitive Forward Current (IFSM)70A
Maximum Operating Junction Temperature (Tj)175°C
Forward Voltage Drop (VF)0.76 (typ), 1.25 (max)V
Reverse Recovery Time (trr)16 ns (typ)ns
Reverse Recovery Current (IRM)4.4 (typ), 5.5 (max)A
Junction to Case Thermal Resistance (Rth(j-c))3.5 °C/W (DPAK)°C/W

Key Features

  • Negligible switching losses
  • High junction temperature
  • Very low conduction losses
  • Low forward and reverse recovery times
  • ECOPACK®2 compliant component for environmental compliance

Applications

The STTH4R02S is recommended for use in:

  • Low voltage, high frequency inverters
  • Freewheeling circuits
  • Polarity protection circuits
  • Industrial applications requiring high efficiency and low losses

Q & A

  1. What is the repetitive peak reverse voltage of the STTH4R02S?
    The repetitive peak reverse voltage (VRRM) is 200 V.
  2. What is the average forward current rating of the STTH4R02S in DPAK package?
    The average forward current (IF(AV)) is 4 A.
  3. What is the maximum operating junction temperature of the STTH4R02S?
    The maximum operating junction temperature (Tj) is 175 °C.
  4. What are the typical forward and reverse recovery times of the STTH4R02S?
    The typical forward recovery time is not specified, but the typical reverse recovery time (trr) is 16 ns.
  5. Is the STTH4R02S ECOPACK® compliant?
    Yes, the STTH4R02S is ECOPACK®2 compliant.
  6. What are the available packages for the STTH4R02S?
    The STTH4R02S is available in DPAK, SMB, and SMC packages.
  7. What is the surge non-repetitive forward current rating of the STTH4R02S?
    The surge non-repetitive forward current (IFSM) is 70 A.
  8. What is the typical forward voltage drop of the STTH4R02S?
    The typical forward voltage drop (VF) is 0.76 V.
  9. What is the junction to case thermal resistance of the STTH4R02S in DPAK package?
    The junction to case thermal resistance (Rth(j-c)) is 3.5 °C/W.
  10. In which types of circuits is the STTH4R02S commonly used?
    The STTH4R02S is commonly used in low voltage, high frequency inverters, freewheeling circuits, and polarity protection circuits.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:1.05 V @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:3 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AB, SMC
Supplier Device Package:SMC
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$0.61
1,263

Please send RFQ , we will respond immediately.

Same Series
STTH4R02U
STTH4R02U
DIODE GEN PURP 200V 4A SMB
STTH4R02B-TR
STTH4R02B-TR
DIODE GEN PURP 200V 4A DPAK
STTH4R02
STTH4R02
DIODE GEN PURP 200V 4A DO201AB
STTH4R02RL
STTH4R02RL
DIODE GEN PURP 200V 4A DO201AB
STTH4R02D
STTH4R02D
DIODE GEN PURP 200V 4A TO220AC
STTH4R02FP
STTH4R02FP
DIODE GEN PURP 200V 4A TO220FP

Similar Products

Part Number STTH4R02S STTH4R02SY STTH4R02U STTH3R02S STTH4R02 STTH4R02B STTH4R02D
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Obsolete Obsolete Obsolete
Diode Type Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 200 V 200 V 200 V 200 V 200 V
Current - Average Rectified (Io) 4A 4A 4A 3A 4A 4A 4A
Voltage - Forward (Vf) (Max) @ If 1.05 V @ 4 A 1.05 V @ 4 A 1.05 V @ 4 A 1 V @ 3 A 1.05 V @ 4 A 1.05 V @ 4 A 1.05 V @ 4 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 30 ns 30 ns 30 ns 30 ns 30 ns 30 ns
Current - Reverse Leakage @ Vr 3 µA @ 200 V 3 µA @ 200 V 3 µA @ 200 V 3 µA @ 200 V 3 µA @ 200 V 3 µA @ 200 V 3 µA @ 200 V
Capacitance @ Vr, F - - - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Through Hole Surface Mount Through Hole
Package / Case DO-214AB, SMC DO-214AB, SMC DO-214AA, SMB DO-214AB, SMC DO-201AB, DO-32, Axial TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220-2
Supplier Device Package SMC SMC SMB SMC DO-201AB DPAK TO-220AC
Operating Temperature - Junction 175°C (Max) -40°C ~ 175°C 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

BAT54-AU_R1_000A1
BAT54-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
BAS16L-G3-08
BAS16L-G3-08
Vishay General Semiconductor - Diodes Division
SWITCHING DIODE GENPURP DFN1006-
PMEG2010AEBF
PMEG2010AEBF
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD523
MBRS140T3G
MBRS140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMB
BAS516-TP
BAS516-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD523
PMEG6010CEJ/ZL115
PMEG6010CEJ/ZL115
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
PMEG4010ER-QX
PMEG4010ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
BAT54-7-G
BAT54-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB
BAT54HYT116
BAT54HYT116
Rohm Semiconductor
30V, 200MA, SOT-23, SINGLE, SCHO

Related Product By Brand

SMA6J8.5CA-TR
SMA6J8.5CA-TR
STMicroelectronics
TVS DIODE 8.5VWM 18.7VC SMA
STTH60AC06CW
STTH60AC06CW
STMicroelectronics
DIODE ARRAY GP 600V 30A TO247
Z0107NA 5AL2
Z0107NA 5AL2
STMicroelectronics
TRIAC SENS GATE 800V 1A TO92
STF140N6F7
STF140N6F7
STMicroelectronics
MOSFET N-CH 60V 70A TO220FP
STL160N4F7
STL160N4F7
STMicroelectronics
MOSFET N-CH 40V 120A POWERFLAT
STM32F207ZET6TR
STM32F207ZET6TR
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM32F215VET6
STM32F215VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
L9959S-TR-D
L9959S-TR-D
STMicroelectronics
IC H-BRIDGE HIGH SIDE 24PSSOP
VNP35N07FI
VNP35N07FI
STMicroelectronics
IC PWR DRVR N-CH 1:1 ISOWATT220
L9779WDM
L9779WDM
STMicroelectronics
HI-QUAD 64 14X14 POW
L79L15ACD13TR
L79L15ACD13TR
STMicroelectronics
IC REG LINEAR -15V 100MA 8SO
LNBH23LQTR
LNBH23LQTR
STMicroelectronics
IC REG CONV SAT TV 1OUT 32QFN