STTH4R02S
  • Share:

STMicroelectronics STTH4R02S

Manufacturer No:
STTH4R02S
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 4A SMC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH4R02S, produced by STMicroelectronics, is an ultrafast recovery diode designed using ST's 200 V planar Pt doping technology. This device is particularly suited for switching mode base drive and transistor circuits. It is available in DPAK, SMB, and SMC packages, making it versatile for various applications. The STTH4R02S is intended for use in low voltage, high frequency inverters, freewheeling, and polarity protection circuits.

Key Specifications

ParameterValueUnit
Repetitive Peak Reverse Voltage (VRRM)200V
Average Forward Current (IF(AV))4A
Forward RMS Current (IF(RMS))10 (DPAK), 7 (SMB/SMC)A
Surge Non-Repetitive Forward Current (IFSM)70A
Maximum Operating Junction Temperature (Tj)175°C
Forward Voltage Drop (VF)0.76 (typ), 1.25 (max)V
Reverse Recovery Time (trr)16 ns (typ)ns
Reverse Recovery Current (IRM)4.4 (typ), 5.5 (max)A
Junction to Case Thermal Resistance (Rth(j-c))3.5 °C/W (DPAK)°C/W

Key Features

  • Negligible switching losses
  • High junction temperature
  • Very low conduction losses
  • Low forward and reverse recovery times
  • ECOPACK®2 compliant component for environmental compliance

Applications

The STTH4R02S is recommended for use in:

  • Low voltage, high frequency inverters
  • Freewheeling circuits
  • Polarity protection circuits
  • Industrial applications requiring high efficiency and low losses

Q & A

  1. What is the repetitive peak reverse voltage of the STTH4R02S?
    The repetitive peak reverse voltage (VRRM) is 200 V.
  2. What is the average forward current rating of the STTH4R02S in DPAK package?
    The average forward current (IF(AV)) is 4 A.
  3. What is the maximum operating junction temperature of the STTH4R02S?
    The maximum operating junction temperature (Tj) is 175 °C.
  4. What are the typical forward and reverse recovery times of the STTH4R02S?
    The typical forward recovery time is not specified, but the typical reverse recovery time (trr) is 16 ns.
  5. Is the STTH4R02S ECOPACK® compliant?
    Yes, the STTH4R02S is ECOPACK®2 compliant.
  6. What are the available packages for the STTH4R02S?
    The STTH4R02S is available in DPAK, SMB, and SMC packages.
  7. What is the surge non-repetitive forward current rating of the STTH4R02S?
    The surge non-repetitive forward current (IFSM) is 70 A.
  8. What is the typical forward voltage drop of the STTH4R02S?
    The typical forward voltage drop (VF) is 0.76 V.
  9. What is the junction to case thermal resistance of the STTH4R02S in DPAK package?
    The junction to case thermal resistance (Rth(j-c)) is 3.5 °C/W.
  10. In which types of circuits is the STTH4R02S commonly used?
    The STTH4R02S is commonly used in low voltage, high frequency inverters, freewheeling circuits, and polarity protection circuits.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:1.05 V @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:3 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AB, SMC
Supplier Device Package:SMC
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$0.61
1,263

Please send RFQ , we will respond immediately.

Same Series
STTH4R02U
STTH4R02U
DIODE GEN PURP 200V 4A SMB
STTH4R02B-TR
STTH4R02B-TR
DIODE GEN PURP 200V 4A DPAK
STTH4R02
STTH4R02
DIODE GEN PURP 200V 4A DO201AB
STTH4R02RL
STTH4R02RL
DIODE GEN PURP 200V 4A DO201AB
STTH4R02D
STTH4R02D
DIODE GEN PURP 200V 4A TO220AC
STTH4R02FP
STTH4R02FP
DIODE GEN PURP 200V 4A TO220FP

Similar Products

Part Number STTH4R02S STTH4R02SY STTH4R02U STTH3R02S STTH4R02 STTH4R02B STTH4R02D
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Obsolete Obsolete Obsolete
Diode Type Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 200 V 200 V 200 V 200 V 200 V
Current - Average Rectified (Io) 4A 4A 4A 3A 4A 4A 4A
Voltage - Forward (Vf) (Max) @ If 1.05 V @ 4 A 1.05 V @ 4 A 1.05 V @ 4 A 1 V @ 3 A 1.05 V @ 4 A 1.05 V @ 4 A 1.05 V @ 4 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 30 ns 30 ns 30 ns 30 ns 30 ns 30 ns
Current - Reverse Leakage @ Vr 3 µA @ 200 V 3 µA @ 200 V 3 µA @ 200 V 3 µA @ 200 V 3 µA @ 200 V 3 µA @ 200 V 3 µA @ 200 V
Capacitance @ Vr, F - - - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Through Hole Surface Mount Through Hole
Package / Case DO-214AB, SMC DO-214AB, SMC DO-214AA, SMB DO-214AB, SMC DO-201AB, DO-32, Axial TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220-2
Supplier Device Package SMC SMC SMB SMC DO-201AB DPAK TO-220AC
Operating Temperature - Junction 175°C (Max) -40°C ~ 175°C 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

PMEG4020EPASX
PMEG4020EPASX
Nexperia USA Inc.
DIODE SCHOTTKY 40V 2A DFN2020D-3
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
STTH108A
STTH108A
STMicroelectronics
DIODE GEN PURP 800V 1A SMA
MUR1520G
MUR1520G
onsemi
DIODE GEN PURP 200V 15A TO220-2
STPSC10H065D
STPSC10H065D
STMicroelectronics
DIODE SCHOTTKY 650V 10A TO220AC
1N4148WHE3-TP
1N4148WHE3-TP
Micro Commercial Co
400MW SWITCHING DIODES SOD-123
BAS282-GS18
BAS282-GS18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 30MA SOD80
STPS8L30B
STPS8L30B
STMicroelectronics
DIODE SCHOTTKY 30V 8A DPAK
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
MUR120-E3/73
MUR120-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
1N4004GPE-M3/54
1N4004GPE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL
MBR120VLSFT1H
MBR120VLSFT1H
onsemi
DIODE SCHOTTKY

Related Product By Brand

SATAULC6-2P6
SATAULC6-2P6
STMicroelectronics
TVS DIODE 5VWM 19VC SOT666
X0202MN 5BA4
X0202MN 5BA4
STMicroelectronics
SCR 600V 1.25A SOT223
STD10NF30
STD10NF30
STMicroelectronics
MOSFET N-CHANNEL 300V 10A DPAK
STM32L052R8H6
STM32L052R8H6
STMicroelectronics
IC MCU 32BIT 64KB FLASH 64TFBGA
M27C4001-12F6
M27C4001-12F6
STMicroelectronics
IC EPROM 4MBIT PARALLEL 32CDIP
L9959S-TR-D
L9959S-TR-D
STMicroelectronics
IC H-BRIDGE HIGH SIDE 24PSSOP
VNQ5050AKTR-E
VNQ5050AKTR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
VB325SP13TR
VB325SP13TR
STMicroelectronics
IC PWR DRVR BIPOLAR 1:1 PWRSO10
VN5E025AJ-E
VN5E025AJ-E
STMicroelectronics
IC PWR SWTCH N-CHAN 1:1 PWRSSO12
LF25CDT-TRY
LF25CDT-TRY
STMicroelectronics
IC REG LINEAR 2.5V 500MA DPAK
LM217MDT-TR
LM217MDT-TR
STMicroelectronics
IC REG LINEAR POS ADJ 500MA DPAK
LM335ADT
LM335ADT
STMicroelectronics
SENSOR ANALOG -40C-100C 8SOIC