STTH4R02SY
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STMicroelectronics STTH4R02SY

Manufacturer No:
STTH4R02SY
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 4A SMC
Delivery:
Payment:
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Product Introduction

Overview

The STTH4R02SY, produced by STMicroelectronics, is an ultrafast recovery diode designed for high-performance applications. This device utilizes ST's advanced 200 V planar Pt doping technology, making it ideal for switching mode base drive and transistor circuits. Available in SMB, SMC, and DPAK packages, it is particularly suited for use in low voltage, high frequency inverters, freewheeling, and polarity protection, especially in automotive environments.

Key Specifications

ParameterValueUnit
IF(AV) - Average Forward Current4A
VRRM - Repetitive Peak Reverse Voltage200V
Tj (max) - Maximum Operating Junction Temperature175°C
VF (typ) - Forward Voltage Drop0.76V
trr (typ) - Reverse Recovery Time16ns
IF(RMS) - Forward RMS Current10A
IFSM - Surge Non-Repetitive Forward Current70A
Tstg - Storage Temperature Range-65 to +175°C
Rth(j-c) - Junction to Case Thermal Resistance (DPAK)3.5°C/W
Rth(j-l) - Junction to Lead Thermal Resistance (SMB, SMC)20°C/W

Key Features

  • Negligible switching losses
  • Very low conduction losses
  • Low forward and reverse recovery times
  • High junction temperature capability up to 175 °C
  • ECOPACK®2 compliant for environmental compliance
  • PPAP capable and AEC-Q101 qualified for automotive applications

Applications

The STTH4R02SY is intended for use in various high-frequency applications, including:

  • Low voltage, high frequency inverters
  • Freewheeling diodes
  • Polarity protection circuits
  • Automotive systems requiring high reliability and performance

Q & A

  1. What is the maximum operating junction temperature of the STTH4R02SY? The maximum operating junction temperature is 175 °C.
  2. What are the typical forward and reverse recovery times of the STTH4R02SY? The typical forward recovery time is not explicitly stated, but the typical reverse recovery time is 16 ns.
  3. What is the repetitive peak reverse voltage (VRRM) of the STTH4R02SY? The VRRM is 200 V.
  4. What are the package options available for the STTH4R02SY? The device is available in DPAK, SMB, and SMC packages.
  5. What is the average forward current (IF(AV)) rating for the STTH4R02SY in DPAK package? The IF(AV) is 4 A for the DPAK package.
  6. Is the STTH4R02SY suitable for automotive applications? Yes, it is PPAP capable and AEC-Q101 qualified, making it suitable for automotive applications.
  7. What is the storage temperature range for the STTH4R02SY? The storage temperature range is -65 to +175 °C.
  8. How does the STTH4R02SY minimize conduction and switching losses? It uses advanced 200 V planar Pt doping technology, which results in very low conduction losses and negligible switching losses.
  9. What is the thermal resistance from junction to case for the DPAK package? The thermal resistance from junction to case for the DPAK package is 3.5 °C/W.
  10. What is the surge non-repetitive forward current (IFSM) rating for the STTH4R02SY? The IFSM is 70 A for a 10 ms sinusoidal pulse.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:1.05 V @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:3 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AB, SMC
Supplier Device Package:SMC
Operating Temperature - Junction:-40°C ~ 175°C
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Same Series
STTH4R02SY
STTH4R02SY
DIODE GEN PURP 200V 4A SMC
STTH4R02BY-TR
STTH4R02BY-TR
DIODE GEN PURP 200V 4A DPAK

Similar Products

Part Number STTH4R02SY STTH4R02UY STTH4R02S
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 200 V
Current - Average Rectified (Io) 4A 4A 4A
Voltage - Forward (Vf) (Max) @ If 1.05 V @ 4 A 1.05 V @ 4 A 1.05 V @ 4 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 30 ns 30 ns
Current - Reverse Leakage @ Vr 3 µA @ 200 V 3 µA @ 200 V 3 µA @ 200 V
Capacitance @ Vr, F - - -
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case DO-214AB, SMC DO-214AA, SMB DO-214AB, SMC
Supplier Device Package SMC SMB SMC
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C 175°C (Max)

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