STTH12R06G
  • Share:

STMicroelectronics STTH12R06G

Manufacturer No:
STTH12R06G
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE GEN PURP 600V 12A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH12R06G, produced by STMicroelectronics, is a high-performance rectifier diode that utilizes ST Turbo 2 600V technology. This device is specifically designed for use as a boost diode in continuous mode power factor corrections and hard switching conditions. It is also suitable for use as a free-wheeling diode in power supplies and other power switching applications.

Key Specifications

Symbol Parameter Value Unit
IF(AV) Average forward current 12 A
VRRM Repetitive peak reverse voltage 600 V
IRM (typ) Reverse recovery current 7 A
Tj Maximum operating junction temperature 175 °C
VF (typ) Forward voltage drop 1.4 V
trr (max) Reverse recovery time 25 ns
IFSM Surge non-repetitive forward current 100 A
Tstg Storage temperature range -65 to +175 °C
Rth(j-c) Junction to case thermal resistance 1.7 °C/W

Key Features

  • Ultrafast switching
  • Low reverse recovery current
  • Low thermal resistance
  • Reduces switching losses
  • High package insulation voltage: TO220AC ins: 2500 V RMS, TO-220FPAC: 2000 V DC

Applications

The STTH12R06G is ideal for various power switching applications, including:

  • Boost diode in continuous mode power factor corrections
  • Free-wheeling diode in power supplies
  • Hard switching conditions
  • Other power switching applications

Q & A

  1. What is the maximum operating junction temperature of the STTH12R06G?

    The maximum operating junction temperature is 175°C.

  2. What is the repetitive peak reverse voltage of the STTH12R06G?

    The repetitive peak reverse voltage is 600 V.

  3. What are the typical applications of the STTH12R06G?

    The device is typically used as a boost diode in continuous mode power factor corrections and as a free-wheeling diode in power supplies and other power switching applications.

  4. What is the average forward current rating of the STTH12R06G?

    The average forward current rating is 12 A.

  5. What is the reverse recovery time of the STTH12R06G?

    The reverse recovery time is up to 25 ns.

  6. What are the available packages for the STTH12R06G?

    The device is available in TO-220AC, TO-220FPAC, and D2PAK packages.

  7. What is the storage temperature range for the STTH12R06G?

    The storage temperature range is -65°C to +175°C.

  8. What is the junction to case thermal resistance of the STTH12R06G in the D2PAK package?

    The junction to case thermal resistance is 1.7°C/W.

  9. Is the STTH12R06G RoHS compliant?
  10. What is the surge non-repetitive forward current rating of the STTH12R06G?

    The surge non-repetitive forward current rating is 100 A for a 10 ms sinusoidal pulse.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):12A
Voltage - Forward (Vf) (Max) @ If:2.9 V @ 12 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):45 ns
Current - Reverse Leakage @ Vr:45 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D2PAK
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$2.57
199

Please send RFQ , we will respond immediately.

Same Series
STTH12R06G-TR
STTH12R06G-TR
DIODE GEN PURP 600V 12A D2PAK
STTH12R06FP
STTH12R06FP
DIODE GEN PURP 600V 12A TO220FP
STTH12R06G
STTH12R06G
DIODE GEN PURP 600V 12A D2PAK
STTH12R06DIRG
STTH12R06DIRG
DIODE GEN PURP 600V 12A TO220AC

Similar Products

Part Number STTH12R06G STTH12R06D
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V
Current - Average Rectified (Io) 12A 12A
Voltage - Forward (Vf) (Max) @ If 2.9 V @ 12 A 2.9 V @ 12 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 45 ns 45 ns
Current - Reverse Leakage @ Vr 45 µA @ 600 V 45 µA @ 600 V
Capacitance @ Vr, F - -
Mounting Type Surface Mount Through Hole
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-2
Supplier Device Package D2PAK TO-220AC
Operating Temperature - Junction 175°C (Max) 175°C (Max)

Related Product By Categories

STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
STPS160AFN
STPS160AFN
STMicroelectronics
60 V, 1 A POWER SCHOTTKY RECTIFI
STTH1R02RL
STTH1R02RL
STMicroelectronics
DIODE GEN PURP 200V 1.5A DO41
STPS1045SF
STPS1045SF
STMicroelectronics
45V POWER SCHOTTKY RECTIFIER
NSVBAS21AHT1G
NSVBAS21AHT1G
onsemi
DIODE GEN PURP 250V 200MA SOD323
STTH5L06B-TR
STTH5L06B-TR
STMicroelectronics
DIODE GEN PURP 600V 5A DPAK
BAV21WS RRG
BAV21WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD323
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
FFSB10120A-F085
FFSB10120A-F085
onsemi
1200V 10A AUTO SIC SBD
MRA4007T3
MRA4007T3
onsemi
DIODE GEN PURP 1KV 1A SMA
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
STTH3R02Q
STTH3R02Q
STMicroelectronics
DIODE GEN PURP 200V 3A DO15

Related Product By Brand

STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
STPS2H100U
STPS2H100U
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMB
X0202MN 5BA4
X0202MN 5BA4
STMicroelectronics
SCR 600V 1.25A SOT223
STF140N6F7
STF140N6F7
STMicroelectronics
MOSFET N-CH 60V 70A TO220FP
STD6N80K5
STD6N80K5
STMicroelectronics
MOSFET N-CH 800V 4.5A DPAK
STM32F103T6U6A
STM32F103T6U6A
STMicroelectronics
IC MCU 32BIT 32KB FLASH 36VFQFPN
STM32F205RBT6TR
STM32F205RBT6TR
STMicroelectronics
IC MCU 32BIT 128KB FLASH 64LQFP
M27C4001-12F6
M27C4001-12F6
STMicroelectronics
IC EPROM 4MBIT PARALLEL 32CDIP
ST1S50PUR
ST1S50PUR
STMicroelectronics
IC REG BUCK ADJ 4A 10VFDFPN
LD39100PU33R
LD39100PU33R
STMicroelectronics
IC REG LINEAR 3.3V 1A 6DFN
PM8908TR
PM8908TR
STMicroelectronics
IC REG CONV DDR 1OUT 20QFN
LM335ADT
LM335ADT
STMicroelectronics
SENSOR ANALOG -40C-100C 8SOIC