STTH12R06DIRG
  • Share:

STMicroelectronics STTH12R06DIRG

Manufacturer No:
STTH12R06DIRG
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE GEN PURP 600V 12A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH12R06DIRG, produced by STMicroelectronics, is a high-performance ultrafast diode utilizing ST Turbo 2 600V technology. This device is specifically designed for use as a boost diode in continuous mode power factor corrections and hard switching conditions. It is also suitable for use as a free-wheeling diode in power supplies and other power switching applications.

Key Specifications

Parameter Value Unit
VRRM (Repetitive Peak Reverse Voltage) 600 V
IF(AV) (Average Forward Current) 12 A
IF(RMS) (Forward RMS Current) 24 (TO-220AC ins.) / 30 (TO-220AC, TO-220FPAC, D2PAK) A
IFSM (Surge Non-Repetitive Forward Current) 100 A
Tj (Maximum Operating Junction Temperature) 175 °C
Tstg (Storage Temperature Range) -65 to +175 °C
VF (Forward Voltage Drop) 1.4 (typ) / 1.8 (max) V
trr (Reverse Recovery Time) 25 (min) / 45 (max) ns
Rth(j-c) (Junction to Case Thermal Resistance) 3.3 (TO-220AC ins.) / 1.7 (TO-220AC, D2PAK) / 4.4 (TO-220FPAC) °C/W

Key Features

  • Ultrafast switching
  • Low reverse recovery current
  • Low thermal resistance
  • Reduces switching losses
  • Package insulation voltage: TO220AC ins: 2500 V RMS, TO-220FPAC: 2000 V DC

Applications

The STTH12R06DIRG is ideal for use in:

  • Continuous mode power factor corrections
  • Hard switching conditions
  • Free-wheeling diodes in power supplies
  • Other power switching applications

Q & A

  1. What is the maximum operating junction temperature of the STTH12R06DIRG?

    The maximum operating junction temperature is 175°C.

  2. What is the repetitive peak reverse voltage (VRRM) of the STTH12R06DIRG?

    The repetitive peak reverse voltage is 600 V.

  3. What are the typical applications of the STTH12R06DIRG?

    It is used in continuous mode power factor corrections, hard switching conditions, and as a free-wheeling diode in power supplies.

  4. What is the forward RMS current (IF(RMS)) for the TO-220AC insulated package?

    The forward RMS current for the TO-220AC insulated package is 24 A.

  5. What is the junction to case thermal resistance (Rth(j-c)) for the TO-220AC insulated package?

    The junction to case thermal resistance for the TO-220AC insulated package is 3.3 °C/W.

  6. What is the storage temperature range for the STTH12R06DIRG?

    The storage temperature range is -65 to +175 °C.

  7. What is the typical forward voltage drop (VF) of the STTH12R06DIRG?

    The typical forward voltage drop is 1.4 V.

  8. What is the reverse recovery time (trr) of the STTH12R06DIRG?

    The reverse recovery time is between 25 ns and 45 ns.

  9. Is the STTH12R06DIRG RoHS compliant?
  10. What are the package options available for the STTH12R06?

    The package options include TO-220AC, TO-220FPAC, TO-220AC insulated, and D2PAK.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):12A
Voltage - Forward (Vf) (Max) @ If:2.9 V @ 12 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):45 ns
Current - Reverse Leakage @ Vr:45 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Insulated, TO-220AC
Supplier Device Package:TO-220AC ins
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$2.93
2

Please send RFQ , we will respond immediately.

Same Series
STTH12R06G-TR
STTH12R06G-TR
DIODE GEN PURP 600V 12A D2PAK
STTH12R06FP
STTH12R06FP
DIODE GEN PURP 600V 12A TO220FP
STTH12R06G
STTH12R06G
DIODE GEN PURP 600V 12A D2PAK
STTH12R06DIRG
STTH12R06DIRG
DIODE GEN PURP 600V 12A TO220AC

Related Product By Categories

BAT54TS_R1_00001
BAT54TS_R1_00001
Panjit International Inc.
SOD-523, SKY
BAT54TS-AU_R1_000A1
BAT54TS-AU_R1_000A1
Panjit International Inc.
SOD-523, SKY
BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
PMEG1020EH,115
PMEG1020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 10V 2A SOD123F
BAV21WS-AQ
BAV21WS-AQ
Diotec Semiconductor
DIODE SOD-323 250V 0.2A 50NS
STPS8H100DEE-TR
STPS8H100DEE-TR
STMicroelectronics
DIODE SCHOTTKY 100V 8A POWERFLAT
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
NRVBA210LNT3G
NRVBA210LNT3G
onsemi
DIODE SCHOTTKY 2A 10V SMA2
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
BYC10X-600PQ
BYC10X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 10A TO220F
PMEG6010CEJ/ZLX
PMEG6010CEJ/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A SC90

Related Product By Brand

SM15T75AY
SM15T75AY
STMicroelectronics
TVS DIODE 64.1VWM 134VC SMC
STN1NF20
STN1NF20
STMicroelectronics
MOSFET N-CH 200V 1A SOT-223
STL160N4F7
STL160N4F7
STMicroelectronics
MOSFET N-CH 40V 120A POWERFLAT
STH15NB50FI
STH15NB50FI
STMicroelectronics
MOSFET N-CH 500V 10.5A ISOWAT218
STM32L151VCH6
STM32L151VCH6
STMicroelectronics
IC MCU 32BIT 256KB FLSH 100UFBGA
STM32L4A6QGI6P
STM32L4A6QGI6P
STMicroelectronics
IC MCU 32BIT 1MB FLASH 132UFBGA
TSZ124IYPT
TSZ124IYPT
STMicroelectronics
IC OPAMP ZER-DRIFT 4CIRC 14TSSOP
M27C4001-12F6
M27C4001-12F6
STMicroelectronics
IC EPROM 4MBIT PARALLEL 32CDIP
VB325SP13TR
VB325SP13TR
STMicroelectronics
IC PWR DRVR BIPOLAR 1:1 PWRSO10
VNQ6040S-E
VNQ6040S-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
LM217MDT-TR
LM217MDT-TR
STMicroelectronics
IC REG LINEAR POS ADJ 500MA DPAK
ISM330DHCXTR
ISM330DHCXTR
STMicroelectronics
INEMO INERTIAL MODULE: ALWAYS-ON