STTH1210D
  • Share:

STMicroelectronics STTH1210D

Manufacturer No:
STTH1210D
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE GEN PURP 1KV 12A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH1210D is a high-performance, ultrafast recovery diode produced by STMicroelectronics. This diode is designed with a high quality architecture that ensures low leakage current, regularly reproducible characteristics, and intrinsic ruggedness. These features make it ideal for heavy-duty applications that demand long-term reliability and high performance.

Key Specifications

ParameterValueUnit
VRRM (Repetitive peak reverse voltage)1000V
IF(RMS) (RMS forward current)30 (TO-220AC, D2PAK, TO-220FPAC), 20 (TO-220AC Ins)A
IF(AV) (Average forward current, δ = 0.5)12 (TO-220AC, D2PAK), 12 (TO-220FPAC at Tc = 40°C), 12 (TO-220AC Ins at Tc = 95°C)A
IFRM (Repetitive peak forward current)120A
IFSM (Surge non-repetitive forward current)80A
Tstg (Storage temperature range)-65 to +175°C
Tj (Maximum operating junction temperature)175°C
VF (Forward voltage drop at IF = 12 A, Tj = 25°C)1.30V
trr (Reverse recovery time at IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25°C)48-65ns

Key Features

  • Ultrafast, soft recovery characteristics
  • Very low conduction and switching losses
  • High frequency and/or high pulsed current operation capability
  • High reverse voltage capability (up to 1000 V)
  • High junction temperature (up to 175°C)
  • Insulated packages (TO-220Ins, TO-220FPAC) with electrical insulation up to 2500 VRMS
  • Low leakage current and improved thermal runaway guard band

Applications

The STTH1210D is suitable for a variety of demanding applications, including:

  • Industrial power supplies
  • Motor control systems
  • Rectification and freewheeling in mission-critical systems
  • Auxiliary functions such as snubber, bootstrap, and demagnetization

Q & A

  1. What is the maximum repetitive peak reverse voltage (VRRM) of the STTH1210D?
    The maximum repetitive peak reverse voltage (VRRM) is 1000 V.
  2. What is the RMS forward current (IF(RMS)) for the TO-220AC package?
    The RMS forward current (IF(RMS)) for the TO-220AC package is 30 A.
  3. What is the typical forward voltage drop (VF) at 12 A and 25°C?
    The typical forward voltage drop (VF) at 12 A and 25°C is 1.30 V.
  4. What is the reverse recovery time (trr) at 1 A, dIF/dt = -50 A/µs, VR = 30 V, and Tj = 25°C?
    The reverse recovery time (trr) under these conditions is typically between 48-65 ns.
  5. What are the storage and operating temperature ranges for the STTH1210D?
    The storage temperature range is -65 to +175°C, and the maximum operating junction temperature is 175°C.
  6. What types of packages are available for the STTH1210D?
    The STTH1210D is available in TO-220AC, TO-220Ins, TO-220FPAC, and D2PAK packages.
  7. What is the electrical insulation rating for the insulated packages?
    The electrical insulation rating for the insulated packages (TO-220Ins, TO-220FPAC) is up to 2500 VRMS.
  8. What are some typical applications for the STTH1210D?
    Typical applications include industrial power supplies, motor control systems, rectification and freewheeling in mission-critical systems, and auxiliary functions like snubber, bootstrap, and demagnetization.
  9. What is the surge non-repetitive forward current (IFSM) rating?
    The surge non-repetitive forward current (IFSM) rating is 80 A.
  10. Is the STTH1210D available in lead-free packages?
    Yes, the STTH1210D is available in ECOPACK® packages which are lead-free and comply with JEDEC Standard JESD97.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):12A
Voltage - Forward (Vf) (Max) @ If:2 V @ 12 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):90 ns
Current - Reverse Leakage @ Vr:10 µA @ 1000 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$3.23
304

Please send RFQ , we will respond immediately.

Same Series
STTH1210D
STTH1210D
DIODE GEN PURP 1KV 12A TO220AC

Similar Products

Part Number STTH1210D STTH1210DI STTH1210DY STTH1212D STTH1210G
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Obsolete
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 1000 V 1200 V 1000 V
Current - Average Rectified (Io) 12A 12A 12A 12A 12A
Voltage - Forward (Vf) (Max) @ If 2 V @ 12 A 2 V @ 12 A 2 V @ 12 A 2.2 V @ 12 A 2 V @ 12 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 90 ns 90 ns 90 ns 100 ns 90 ns
Current - Reverse Leakage @ Vr 10 µA @ 1000 V 10 µA @ 1000 V 10 µA @ 1000 V 10 µA @ 1200 V 10 µA @ 1000 V
Capacitance @ Vr, F - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Surface Mount
Package / Case TO-220-2 TO-220-2 Insulated, TO-220AC TO-220-2 TO-220-2 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-220AC TO-220AC ins TO-220AC TO-220AC D2PAK
Operating Temperature - Junction 175°C (Max) 175°C (Max) -40°C ~ 175°C 175°C (Max) 175°C (Max)

Related Product By Categories

1N4148WS RRG
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
STPS2150A
STPS2150A
STMicroelectronics
DIODE SCHOTTKY 150V 2A SMA
BAS21Q-13-F
BAS21Q-13-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
RB751CS40,315
RB751CS40,315
Nexperia USA Inc.
DIODE SCHOTTKY 40V 120MA SOD882
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
1N4937GP-E3/54
1N4937GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
BAV21W-HE3-18
BAV21W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
1N5711UBD
1N5711UBD
Microchip Technology
SCHOTTKY BARRIER DIODE CERAMIC S
BAT54-7-G
BAT54-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23
RB751S-40GJTE61
RB751S-40GJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD

Related Product By Brand

TMMDB3TG
TMMDB3TG
STMicroelectronics
DIAC 30-34V 2A MINIMELF
X0202MN 5BA4
X0202MN 5BA4
STMicroelectronics
SCR 600V 1.25A SOT223
BTB16-800BWRG
BTB16-800BWRG
STMicroelectronics
TRIAC ALTERNISTOR 800V TO220AB
BD678A
BD678A
STMicroelectronics
TRANS PNP DARL 60V 4A SOT32-3
STL160N4F7
STL160N4F7
STMicroelectronics
MOSFET N-CH 40V 120A POWERFLAT
STM32F207ZET6TR
STM32F207ZET6TR
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM32F427VGT6TR
STM32F427VGT6TR
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM32F407ZET7
STM32F407ZET7
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM32H7B3IIT6Q
STM32H7B3IIT6Q
STMicroelectronics
IC MCU 32BIT 2MB FLASH 176LQFP
STG3682QTR
STG3682QTR
STMicroelectronics
IC SWITCH DUAL SPDT 10QFN
VN750PSTR-E
VN750PSTR-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
PSD813F2A-90M
PSD813F2A-90M
STMicroelectronics
IC FLASH 1M PARALLEL 52PQFP