STTH1210DY
  • Share:

STMicroelectronics STTH1210DY

Manufacturer No:
STTH1210DY
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE GEN PURP 1KV 12A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH1210DY from STMicroelectronics is an ultrafast recovery high-voltage diode designed for demanding applications requiring high reliability and performance. This diode features low leakage current, regularly reproducible characteristics, and intrinsic ruggedness, making it ideal for heavy-duty applications such as industrial power supplies, motor control, and similar mission-critical systems. The device is available in various packages, including TO-220AC, TO-220FPAC, and TO-220Ins, ensuring versatility in different design requirements.

Key Specifications

Parameter Value Unit
VRRM (Repetitive peak reverse voltage) 1000 V
IF(RMS) (RMS forward current) 30 A (TO-220AC / D2PAK / TO-220FPAC), 20 A (TO-220AC Ins) A
IF(AV) (Average forward current) 12 A (TO-220AC / D2PAK), 12 A (TO-220FPAC at Tc = 40°C), 12 A (TO-220AC Ins at Tc = 95°C) A
IFRM (Repetitive peak forward current) 120 A (tp = 5 µs, F = 5 kHz square) A
IFSM (Surge non-repetitive forward current) 80 A (tp = 10 ms Sinusoidal) A
Tstg (Storage temperature range) -65 to +175 °C
Tj (Maximum operating junction temperature) 175 °C
VF (Forward voltage drop) 1.30 V (typical at Tj = 25°C, IF = 12 A) V
trr (Reverse recovery time) 48 ns (typical at Tj = 25°C, IF = 1 A, dIF/dt = -200 A/µs, VR = 600 V) ns
IRM (Reverse recovery current) 15 A (typical at Tj = 125°C, IF = 12 A, dIF/dt = -200 A/µs, VR = 600 V) A

Key Features

  • Ultrafast, soft recovery: Ensures minimal switching losses and high-frequency operation.
  • Low conduction and switching losses: Optimized for high-efficiency applications.
  • High reverse voltage capability: Up to 1000 V, suitable for high-voltage applications.
  • High junction temperature: Maximum operating junction temperature of 175°C.
  • Insulated packages: Available in TO-220AC, TO-220FPAC, and TO-220Ins with electrical insulation up to 2500 VRMS.
  • Low leakage current: Ensures long-term reliability and prevents thermal runaway.
  • ECOPACK® packages: Lead-free second-level interconnect, compliant with JEDEC Standard JESD97.

Applications

  • Industrial power supplies: Ideal for rectification and freewheeling in high-power supply systems.
  • Motor control: Suitable for motor drive applications requiring high reliability and efficiency.
  • Auxiliary functions: Can be used in snubber, bootstrap, and demagnetization circuits.
  • Mission-critical systems: Appropriate for any system demanding high reliability and performance.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the STTH1210DY?

    The maximum repetitive peak reverse voltage (VRRM) is 1000 V.

  2. What are the typical forward voltage drop and reverse recovery time of the STTH1210DY?

    The typical forward voltage drop (VF) is 1.30 V at Tj = 25°C and IF = 12 A. The typical reverse recovery time (trr) is 48 ns at Tj = 25°C, IF = 1 A, dIF/dt = -200 A/µs, and VR = 600 V.

  3. What are the available package types for the STTH1210DY?

    The STTH1210DY is available in TO-220AC, TO-220FPAC, and TO-220Ins packages.

  4. What is the maximum operating junction temperature of the STTH1210DY?

    The maximum operating junction temperature (Tj) is 175°C.

  5. What are some typical applications of the STTH1210DY?

    Typical applications include industrial power supplies, motor control, and auxiliary functions such as snubber, bootstrap, and demagnetization circuits.

  6. Does the STTH1210DY come in lead-free packages?
  7. What is the RMS forward current rating for the TO-220AC package?

    The RMS forward current (IF(RMS)) for the TO-220AC package is 30 A.

  8. What is the surge non-repetitive forward current rating for the STTH1210DY?

    The surge non-repetitive forward current (IFSM) is 80 A for a pulse duration of 10 ms sinusoidal.

  9. How does the STTH1210DY handle high-frequency operations?

    The STTH1210DY is designed for high-frequency and/or high-pulsed current operations due to its ultrafast recovery characteristics.

  10. What is the storage temperature range for the STTH1210DY?

    The storage temperature range (Tstg) is from -65°C to +175°C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):12A
Voltage - Forward (Vf) (Max) @ If:2 V @ 12 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):90 ns
Current - Reverse Leakage @ Vr:10 µA @ 1000 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:-40°C ~ 175°C
0 Remaining View Similar

In Stock

$2.86
117

Please send RFQ , we will respond immediately.

Similar Products

Part Number STTH1210DY STTH1210D STTH1210DI
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 1000 V
Current - Average Rectified (Io) 12A 12A 12A
Voltage - Forward (Vf) (Max) @ If 2 V @ 12 A 2 V @ 12 A 2 V @ 12 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 90 ns 90 ns 90 ns
Current - Reverse Leakage @ Vr 10 µA @ 1000 V 10 µA @ 1000 V 10 µA @ 1000 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2 Insulated, TO-220AC
Supplier Device Package TO-220AC TO-220AC TO-220AC ins
Operating Temperature - Junction -40°C ~ 175°C 175°C (Max) 175°C (Max)

Related Product By Categories

STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
BAV21WS-AQ
BAV21WS-AQ
Diotec Semiconductor
DIODE SOD-323 250V 0.2A 50NS
MBR2H100SFT3G
MBR2H100SFT3G
onsemi
DIODE SCHOTTKY 100V 2A SOD123FL
BAS16WS-HE3-18
BAS16WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
BAS21WQ-7-F
BAS21WQ-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
1N4002GP
1N4002GP
Fairchild Semiconductor
RECTIFIER DIODE
MBRS130
MBRS130
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 1A, 30V
MBR0530T3
MBR0530T3
onsemi
DIODE SCHOTTKY 30V 500MA SOD123
MUR240
MUR240
onsemi
DIODE GEN PURP 400V 2A AXIAL
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAT54/LF1R
BAT54/LF1R
NXP USA Inc.
DIODE SCHOTTKY TO-236AB

Related Product By Brand

STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
SD2931-10W
SD2931-10W
STMicroelectronics
IC TRANS RF HF/VHF/UHF M174
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STH410N4F7-6AG
STH410N4F7-6AG
STMicroelectronics
MOSFET N-CH 40V 200A H2PAK-6
STGP30H60DF
STGP30H60DF
STMicroelectronics
IGBT 600V 60A 260W TO220
STM32L052R8H6
STM32L052R8H6
STMicroelectronics
IC MCU 32BIT 64KB FLASH 64TFBGA
ST2129BQTR
ST2129BQTR
STMicroelectronics
IC TRNSLTR BIDIRECTIONAL 8QFN
M24C32-RMN6TP
M24C32-RMN6TP
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
M27C160-100F1
M27C160-100F1
STMicroelectronics
IC EPROM 16MBIT PARALLEL 42CDIP
L9301-TR
L9301-TR
STMicroelectronics
IC PWR DRIVER N-CHANNEL PWRSSO36
VN750SM
VN750SM
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
VNQ6040S-E
VNQ6040S-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36