STPSC8H065DLF
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STMicroelectronics STPSC8H065DLF

Manufacturer No:
STPSC8H065DLF
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
SILICON CARBIDE DIODES
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC8H065DLF is an ultra-high performance power Schottky diode manufactured by STMicroelectronics. This 8 A, 650 V silicon carbide (SiC) diode is designed using a silicon carbide substrate, which allows for a wide band gap material and a 650 V rating. The Schottky construction of this diode ensures no reverse recovery charge and negligible ringing patterns at turn-off, making it highly efficient in various power applications. The diode is packaged in a PowerFLAT™ 8x8 HV package, which is ECOPACK®2 compliant and suitable for low-profile, high-surge applications in sectors such as Telecom & Network, Industrial, and Renewable energy.

Key Specifications

Symbol Parameter Value Unit
IF(AV) Average forward current 8 A
VRRM Repetitive peak reverse voltage 650 V
VF(typ.) Forward voltage drop (typical) 1.38 V
Tj(max.) Maximum junction temperature 175 °C
IF(RMS) Forward rms current 22 A
IFSM Surge non-repetitive forward current 75 A (tp = 10 ms, Tc = 25 °C) A
IR Reverse leakage current 7 µA (Tj = 25 °C, VR = VRRM) µA

Key Features

  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • High forward surge capability
  • Low drop forward voltage
  • Power efficient product
  • ECOPACK®2 compliant component
  • Less-than-1mm height package with high creepage
  • Minimal capacitive turn-off behavior

Applications

  • Switch mode power supply
  • Power Factor Correction (PFC)
  • Boost diode applications
  • LLC (Inductor-Inductor-Capacitor) topologies
  • High frequency inverter applications
  • DC-DC converters
  • Telecom & Network, Industrial, and Renewable energy sectors

Q & A

  1. What is the maximum forward current of the STPSC8H065DLF?

    The maximum average forward current (IF(AV)) is 8 A.

  2. What is the repetitive peak reverse voltage rating of the STPSC8H065DLF?

    The repetitive peak reverse voltage (VRRM) is 650 V.

  3. What is the typical forward voltage drop of the STPSC8H065DLF?

    The typical forward voltage drop (VF(typ.)) is 1.38 V.

  4. What is the maximum junction temperature for the STPSC8H065DLF?

    The maximum junction temperature (Tj(max.)) is 175 °C.

  5. Does the STPSC8H065DLF have any reverse recovery charge?

    No, the STPSC8H065DLF has no reverse recovery charge in its application current range.

  6. Is the switching behavior of the STPSC8H065DLF temperature-dependent?

    No, the switching behavior is independent of temperature.

  7. What are the typical applications of the STPSC8H065DLF?

    Typical applications include switch mode power supply, PFC, boost diode, LLC topologies, and high frequency inverter applications.

  8. Is the STPSC8H065DLF environmentally compliant?
  9. What package type is used for the STPSC8H065DLF?

    The STPSC8H065DLF is packaged in a PowerFLAT™ 8x8 HV package.

  10. What is the surge non-repetitive forward current capability of the STPSC8H065DLF?

    The surge non-repetitive forward current (IFSM) is 75 A for a pulse duration of 10 ms at a case temperature of 25 °C.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.55 V @ 8 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:80 µA @ 650 V
Capacitance @ Vr, F:460pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:PowerFlat™ (8x8) HV
Operating Temperature - Junction:-40°C ~ 175°C
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Similar Products

Part Number STPSC8H065DLF STPSC4H065DLF STPSC6H065DLF
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V
Current - Average Rectified (Io) 8A 4A 6A
Voltage - Forward (Vf) (Max) @ If 1.55 V @ 8 A 1.55 V @ 4 A 1.55 V @ 6 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 80 µA @ 650 V 40 µA @ 650 V 60 µA @ 650 V
Capacitance @ Vr, F 460pF @ 0V, 1MHz 245pF @ 0V, 1MHz 350pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN
Supplier Device Package PowerFlat™ (8x8) HV PowerFlat™ (8x8) HV PowerFlat™ (8x8) HV
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

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