STPSC6H065DLF
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STMicroelectronics STPSC6H065DLF

Manufacturer No:
STPSC6H065DLF
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
SILICON CARBIDE DIODES
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC6H065DLF is a high-performance power Schottky diode manufactured by STMicroelectronics. This diode is built using a silicon carbide (SiC) substrate, which provides ultra-high performance characteristics. It is designed to handle high voltage and current, making it suitable for various power management applications.

Key Specifications

ParameterValue
Current Rating6 A
Reverse Voltage650 V
Package TypeSurface Mount PowerFlat™ (8x8) HV
MaterialSilicon Carbide (SiC)
Reverse Recovery TimeLow reverse recovery characteristics

Key Features

  • Ultra-high performance due to silicon carbide substrate
  • Low reverse recovery time, contributing to energy savings
  • High current rating of 6 A and high reverse voltage of 650 V
  • Surface Mount PowerFlat™ (8x8) HV package for efficient thermal management

Applications

  • Switch-Mode Power Supplies (SMPS)
  • Solar energy conversion systems
  • Electric Vehicle (EV) and Hybrid Electric Vehicle (HEV) charging stations
  • Other high-power electronic systems requiring efficient power management

Q & A

  1. What is the current rating of the STPSC6H065DLF diode?
    The current rating of the STPSC6H065DLF diode is 6 A.
  2. What is the reverse voltage rating of the STPSC6H065DLF diode?
    The reverse voltage rating of the STPSC6H065DLF diode is 650 V.
  3. What material is used in the STPSC6H065DLF diode?
    The STPSC6H065DLF diode is made using a silicon carbide (SiC) substrate.
  4. What is the package type of the STPSC6H065DLF diode?
    The package type of the STPSC6H065DLF diode is Surface Mount PowerFlat™ (8x8) HV.
  5. What are the key applications of the STPSC6H065DLF diode?
    The STPSC6H065DLF diode is used in Switch-Mode Power Supplies (SMPS), solar energy conversion systems, EV and HEV charging stations, and other high-power electronic systems.
  6. What are the benefits of the low reverse recovery time in the STPSC6H065DLF diode?
    The low reverse recovery time in the STPSC6H065DLF diode contributes to energy savings in various applications.
  7. Where can I find detailed specifications for the STPSC6H065DLF diode?
    Detailed specifications for the STPSC6H065DLF diode can be found in the datasheet available on STMicroelectronics' official website and distributors like Digi-Key and Mouser.
  8. Is the STPSC6H065DLF diode suitable for high-power applications?
    Yes, the STPSC6H065DLF diode is designed for high-power applications due to its high current and voltage ratings.
  9. What is the advantage of using a silicon carbide substrate in the STPSC6H065DLF diode?
    The silicon carbide substrate in the STPSC6H065DLF diode provides ultra-high performance characteristics, including higher efficiency and reliability compared to traditional silicon diodes.
  10. Can the STPSC6H065DLF diode be used in solar energy systems?
    Yes, the STPSC6H065DLF diode is suitable for use in solar energy conversion systems due to its high efficiency and reliability.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):6A
Voltage - Forward (Vf) (Max) @ If:1.55 V @ 6 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:60 µA @ 650 V
Capacitance @ Vr, F:350pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:PowerFlat™ (8x8) HV
Operating Temperature - Junction:-40°C ~ 175°C
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Similar Products

Part Number STPSC6H065DLF STPSC8H065DLF STPSC4H065DLF
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V
Current - Average Rectified (Io) 6A 8A 4A
Voltage - Forward (Vf) (Max) @ If 1.55 V @ 6 A 1.55 V @ 8 A 1.55 V @ 4 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 60 µA @ 650 V 80 µA @ 650 V 40 µA @ 650 V
Capacitance @ Vr, F 350pF @ 0V, 1MHz 460pF @ 0V, 1MHz 245pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN
Supplier Device Package PowerFlat™ (8x8) HV PowerFlat™ (8x8) HV PowerFlat™ (8x8) HV
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

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