STPSC4H065DLF
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STMicroelectronics STPSC4H065DLF

Manufacturer No:
STPSC4H065DLF
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
SILICON CARBIDE DIODES
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC4H065DLF is an ultra-high performance power Schottky diode manufactured by STMicroelectronics. This 4 A, 650 V diode is built using a silicon carbide substrate, which allows for a wide band gap material and a Schottky diode structure with negligible reverse recovery and minimal capacitive turn-off behavior. It is qualified in a low profile PowerFLAT 8x8 HV package, making it suitable for applications requiring low drop forward voltage and high surge capabilities in limited space environments.

Key Specifications

ParameterValue
Current Rating4 A
Voltage Rating650 V
Package TypePowerFLAT 8x8 HV
HeightLess than 1 mm
Forward Voltage DropLow
Reverse RecoveryNegligible
Operating Temperature Range-40°C to 175°C (junction temperature)
RoHS ComplianceEcopack2

Key Features

  • Less than 1 mm height package
  • High creepage package
  • No or negligible reverse recovery
  • Temperature independent switching behavior
  • High forward surge capability
  • Low drop forward voltage
  • Power efficient product
  • ECOPACK2 compliant component

Applications

The STPSC4H065DLF is suitable for various applications, including:

  • Telecom and network systems
  • Industrial domains
  • Renameable energy systems
  • Solar energy conversion
  • Electric Vehicle (EV) or Hybrid Electric Vehicle (HEV) charging stations
  • Switch-Mode Power Supplies (SMPS)

Q & A

  1. What is the current rating of the STPSC4H065DLF diode?
    The current rating of the STPSC4H065DLF diode is 4 A.
  2. What is the voltage rating of the STPSC4H065DLF diode?
    The voltage rating of the STPSC4H065DLF diode is 650 V.
  3. What type of package does the STPSC4H065DLF come in?
    The STPSC4H065DLF comes in a PowerFLAT 8x8 HV package.
  4. What is the height of the STPSC4H065DLF package?
    The height of the STPSC4H065DLF package is less than 1 mm.
  5. Does the STPSC4H065DLF have reverse recovery?
    No, the STPSC4H065DLF has negligible reverse recovery.
  6. What is the operating temperature range of the STPSC4H065DLF?
    The operating temperature range of the STPSC4H065DLF is -40°C to 175°C (junction temperature).
  7. Is the STPSC4H065DLF RoHS compliant?
    Yes, the STPSC4H065DLF is ECOPACK2 compliant and RoHS compliant.
  8. What are some typical applications of the STPSC4H065DLF?
    The STPSC4H065DLF is used in telecom and network systems, industrial domains, renewable energy systems, solar energy conversion, EV or HEV charging stations, and SMPS applications.
  9. What material is the STPSC4H065DLF made of?
    The STPSC4H065DLF is made using a silicon carbide substrate.
  10. Does the STPSC4H065DLF have high forward surge capability?
    Yes, the STPSC4H065DLF has high forward surge capability.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:1.55 V @ 4 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:40 µA @ 650 V
Capacitance @ Vr, F:245pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:PowerFlat™ (8x8) HV
Operating Temperature - Junction:-40°C ~ 175°C
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Similar Products

Part Number STPSC4H065DLF STPSC8H065DLF STPSC6H065DLF
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V
Current - Average Rectified (Io) 4A 8A 6A
Voltage - Forward (Vf) (Max) @ If 1.55 V @ 4 A 1.55 V @ 8 A 1.55 V @ 6 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 40 µA @ 650 V 80 µA @ 650 V 60 µA @ 650 V
Capacitance @ Vr, F 245pF @ 0V, 1MHz 460pF @ 0V, 1MHz 350pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN
Supplier Device Package PowerFlat™ (8x8) HV PowerFlat™ (8x8) HV PowerFlat™ (8x8) HV
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

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