STPSC20H12GY-TR
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STMicroelectronics STPSC20H12GY-TR

Manufacturer No:
STPSC20H12GY-TR
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 1.2KV 20A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC20H12GY-TR is an ultra-high performance power Schottky diode manufactured by STMicroelectronics. This diode is built using a silicon carbide (SiC) substrate, which allows for a 1200 V rating and exceptional performance characteristics. The SiC material enables the design of a Schottky diode structure with negligible reverse recovery and minimal capacitive turn-off behavior, independent of temperature. This makes the STPSC20H12GY-TR particularly suited for applications requiring high efficiency and robustness.

Key Specifications

Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 1200 V
IF(AV) Average forward current 20 A
IFRM Repetitive peak forward current 78 A
IFSM Surge non-repetitive forward current 140 (tp = 10 ms sinusoidal, Tc = 25 °C) A
Tj Operating junction temperature -40 to +175 °C
VF (typ.) Forward voltage drop 1.35 V
Rth(j-c) Junction to case thermal resistance 0.30 to 0.45 °C/W

Key Features

  • AEC-Q101 qualified, ensuring automotive-grade reliability.
  • No or negligible reverse recovery, reducing switching losses.
  • Switching behavior independent of temperature, enhancing stability.
  • Robust high voltage periphery for reliable operation in harsh conditions.
  • PPAP (Production Part Approval Process) capable, meeting stringent quality standards.
  • Operating junction temperature range from -40 °C to 175 °C.
  • D²PAK HV package with a creepage distance (anode to cathode) of 5.38 mm minimum.
  • ECOPACK compliant, meeting environmental requirements.

Applications

  • On-board chargers for electric vehicles.
  • Power Factor Correction (PFC) applications, especially in hard switching conditions.
  • Other high-performance power conversion systems requiring low losses and high reliability.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the STPSC20H12GY-TR?

    The maximum repetitive peak reverse voltage is 1200 V.

  2. What is the average forward current rating of this diode?

    The average forward current rating is 20 A.

  3. What is the typical forward voltage drop at 20 A?

    The typical forward voltage drop at 20 A is 1.35 V.

  4. What is the operating junction temperature range of the STPSC20H12GY-TR?

    The operating junction temperature range is from -40 °C to 175 °C.

  5. Is the STPSC20H12GY-TR AEC-Q101 qualified?
  6. What package types are available for the STPSC20H12GY-TR?

    The diode is available in TO-220AC and D²PAK (including D²PAK HV) packages.

  7. What is the creepage distance between the anode and cathode in the D²PAK HV package?

    The minimum creepage distance between the anode and cathode in the D²PAK HV package is 5.38 mm.

  8. Is the STPSC20H12GY-TR ECOPACK compliant?
  9. What are some typical applications for the STPSC20H12GY-TR?

    Typical applications include on-board chargers, PFC applications, and other high-performance power conversion systems.

  10. What is the surge non-repetitive forward current rating for the STPSC20H12GY-TR?

    The surge non-repetitive forward current rating is 140 A for a 10 ms sinusoidal pulse at 25 °C.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):20A
Voltage - Forward (Vf) (Max) @ If:1.5 V @ 20 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:120 µA @ 1200 V
Capacitance @ Vr, F:1650pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK
Operating Temperature - Junction:-40°C ~ 175°C
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Same Series
STPSC20H12DY
STPSC20H12DY
DIODE SCHOTTKY 1.2KV 20A TO220AC

Similar Products

Part Number STPSC20H12GY-TR STPSC10H12GY-TR STPSC20H12G-TR STPSC20H12G2Y-TR
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 1200 V 1200 V
Current - Average Rectified (Io) 20A 10A 20A 20A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 20 A 1.5 V @ 10 A 1.5 V @ 20 A 1.5 V @ 20 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns -
Current - Reverse Leakage @ Vr 120 µA @ 1200 V 60 µA @ 1200 V 120 µA @ 1200 V 120 µA @ 1200 V
Capacitance @ Vr, F 1650pF @ 0V, 1MHz 725pF @ 0V, 1MHz 1650pF @ 0V, 1MHz 1650pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D²PAK D²PAK D²PAK D2PAK HV
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

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