STPSC20H12GY-TR
  • Share:

STMicroelectronics STPSC20H12GY-TR

Manufacturer No:
STPSC20H12GY-TR
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 1.2KV 20A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC20H12GY-TR is an ultra-high performance power Schottky diode manufactured by STMicroelectronics. This diode is built using a silicon carbide (SiC) substrate, which allows for a 1200 V rating and exceptional performance characteristics. The SiC material enables the design of a Schottky diode structure with negligible reverse recovery and minimal capacitive turn-off behavior, independent of temperature. This makes the STPSC20H12GY-TR particularly suited for applications requiring high efficiency and robustness.

Key Specifications

Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 1200 V
IF(AV) Average forward current 20 A
IFRM Repetitive peak forward current 78 A
IFSM Surge non-repetitive forward current 140 (tp = 10 ms sinusoidal, Tc = 25 °C) A
Tj Operating junction temperature -40 to +175 °C
VF (typ.) Forward voltage drop 1.35 V
Rth(j-c) Junction to case thermal resistance 0.30 to 0.45 °C/W

Key Features

  • AEC-Q101 qualified, ensuring automotive-grade reliability.
  • No or negligible reverse recovery, reducing switching losses.
  • Switching behavior independent of temperature, enhancing stability.
  • Robust high voltage periphery for reliable operation in harsh conditions.
  • PPAP (Production Part Approval Process) capable, meeting stringent quality standards.
  • Operating junction temperature range from -40 °C to 175 °C.
  • D²PAK HV package with a creepage distance (anode to cathode) of 5.38 mm minimum.
  • ECOPACK compliant, meeting environmental requirements.

Applications

  • On-board chargers for electric vehicles.
  • Power Factor Correction (PFC) applications, especially in hard switching conditions.
  • Other high-performance power conversion systems requiring low losses and high reliability.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the STPSC20H12GY-TR?

    The maximum repetitive peak reverse voltage is 1200 V.

  2. What is the average forward current rating of this diode?

    The average forward current rating is 20 A.

  3. What is the typical forward voltage drop at 20 A?

    The typical forward voltage drop at 20 A is 1.35 V.

  4. What is the operating junction temperature range of the STPSC20H12GY-TR?

    The operating junction temperature range is from -40 °C to 175 °C.

  5. Is the STPSC20H12GY-TR AEC-Q101 qualified?
  6. What package types are available for the STPSC20H12GY-TR?

    The diode is available in TO-220AC and D²PAK (including D²PAK HV) packages.

  7. What is the creepage distance between the anode and cathode in the D²PAK HV package?

    The minimum creepage distance between the anode and cathode in the D²PAK HV package is 5.38 mm.

  8. Is the STPSC20H12GY-TR ECOPACK compliant?
  9. What are some typical applications for the STPSC20H12GY-TR?

    Typical applications include on-board chargers, PFC applications, and other high-performance power conversion systems.

  10. What is the surge non-repetitive forward current rating for the STPSC20H12GY-TR?

    The surge non-repetitive forward current rating is 140 A for a 10 ms sinusoidal pulse at 25 °C.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):20A
Voltage - Forward (Vf) (Max) @ If:1.5 V @ 20 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:120 µA @ 1200 V
Capacitance @ Vr, F:1650pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK
Operating Temperature - Junction:-40°C ~ 175°C
0 Remaining View Similar

In Stock

$12.71
76

Please send RFQ , we will respond immediately.

Same Series
STPSC20H12DY
STPSC20H12DY
DIODE SCHOTTKY 1.2KV 20A TO220AC

Similar Products

Part Number STPSC20H12GY-TR STPSC10H12GY-TR STPSC20H12G-TR STPSC20H12G2Y-TR
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 1200 V 1200 V
Current - Average Rectified (Io) 20A 10A 20A 20A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 20 A 1.5 V @ 10 A 1.5 V @ 20 A 1.5 V @ 20 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns -
Current - Reverse Leakage @ Vr 120 µA @ 1200 V 60 µA @ 1200 V 120 µA @ 1200 V 120 µA @ 1200 V
Capacitance @ Vr, F 1650pF @ 0V, 1MHz 725pF @ 0V, 1MHz 1650pF @ 0V, 1MHz 1650pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D²PAK D²PAK D²PAK D2PAK HV
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

Related Product By Categories

BAT54-TP
BAT54-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 200MA SOT23
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
BAS516-TP
BAS516-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD523
MBRS130
MBRS130
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 1A, 30V
PMEG4050ETP-QX
PMEG4050ETP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
1N4148,133
1N4148,133
NXP USA Inc.
DIODE GEN PURP 100V 200MA ALF2
STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
STPS8L30B
STPS8L30B
STMicroelectronics
DIODE SCHOTTKY 30V 8A DPAK
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
BAT54T
BAT54T
onsemi
DIODE SCHOTTKY 30V 200MA SOT523
NRVBD360VT4G
NRVBD360VT4G
onsemi
DIODE SCHOTTKY 60V 3A DPAK
BAS316-QF
BAS316-QF
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

SM6T12CA
SM6T12CA
STMicroelectronics
TVS DIODE 10.2VWM 21.7VC SMB
STH15NB50FI
STH15NB50FI
STMicroelectronics
MOSFET N-CH 500V 10.5A ISOWAT218
STM32L496ZGT3
STM32L496ZGT3
STMicroelectronics
IC MCU 32BIT 1MB FLASH 144LQFP
STM32L433VCT3
STM32L433VCT3
STMicroelectronics
IC MCU 32BIT 256KB FLASH 100LQFP
STM32F103VFT7
STM32F103VFT7
STMicroelectronics
IC MCU 32BIT 768KB FLASH 100LQFP
TL084IDT
TL084IDT
STMicroelectronics
IC OPAMP JFET 4 CIRCUIT 14SO
TS339IPT
TS339IPT
STMicroelectronics
IC COMP MICROPWR QUAD V 14 TSSOP
TS393IPT
TS393IPT
STMicroelectronics
IC COMPARATOR DUAL MCRPWR 8TSSOP
M24C32-DRMN3TP/K
M24C32-DRMN3TP/K
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
VIPER27LDTR
VIPER27LDTR
STMicroelectronics
IC OFFLINE SWITCH FLYBACK 16SO
VNQ6004SA-E
VNQ6004SA-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
AIS326DQ
AIS326DQ
STMicroelectronics
ACCEL 2-6G I2C/SPI 28QFPN