STPSC10H12GY-TR
  • Share:

STMicroelectronics STPSC10H12GY-TR

Manufacturer No:
STPSC10H12GY-TR
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 1.2KV 10A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC10H12GY-TR is a silicon-carbide (SiC) Schottky diode produced by STMicroelectronics. This component is designed to offer high performance and efficiency in various power conversion applications. The SiC technology allows for low reverse recovery characteristics, which are crucial for energy savings and improved system reliability. The diode is particularly suited for use in hard switching conditions, making it an excellent choice for modern power electronics.

Key Specifications

Parameter Value
Type of Diode Schottky Rectifying
Case TO-263-2 (D2PAK)
Mounting SMD
Max. Off-State Voltage (V) 1200 V
Load Current (A) 10 A
Forward Voltage Drop (V) 1.5 V @ 10 A

Key Features

  • Low Reverse Recovery Characteristics: Enhances energy savings and system efficiency, especially in SMPS applications and emerging domains like solar energy conversion and EV/HEV charging stations.
  • Wide Band-Gap Material: Allows for the design of a low VF Schottky diode structure, contributing to improved performance in hard switching conditions.
  • High Voltage Rating: Rated at 1200 V, making it suitable for high-voltage applications.
  • High Current Capability: Supports a load current of up to 10 A, making it versatile for various power conversion needs.

Applications

  • Power Factor Correction (PFC): Ideal for PFC applications due to its low reverse recovery characteristics and high efficiency.
  • Secondary Side Applications: Suitable for use in the secondary side of power supplies, enhancing overall system performance.
  • Solar Energy Conversion: Used in solar energy conversion systems to improve efficiency and reduce energy losses.
  • Electric Vehicle (EV) and Hybrid Electric Vehicle (HEV) Charging Stations: Enhances the performance and efficiency of charging stations.

Q & A

  1. What is the STPSC10H12GY-TR diode made of?

    The STPSC10H12GY-TR diode is made of silicon-carbide (SiC) material.

  2. What is the maximum off-state voltage of the STPSC10H12GY-TR?

    The maximum off-state voltage is 1200 V.

  3. What is the load current rating of the STPSC10H12GY-TR?

    The load current rating is 10 A.

  4. What type of case does the STPSC10H12GY-TR use?

    The STPSC10H12GY-TR uses a TO-263-2 (D2PAK) case.

  5. What are the key benefits of using SiC technology in the STPSC10H12GY-TR?

    The key benefits include low reverse recovery characteristics, improved efficiency, and enhanced performance in hard switching conditions.

  6. Where can the STPSC10H12GY-TR be used?

    It can be used in PFC, secondary side applications, solar energy conversion, and EV/HEV charging stations.

  7. What is the forward voltage drop of the STPSC10H12GY-TR at 10 A?

    The forward voltage drop is 1.5 V at 10 A.

  8. Is the STPSC10H12GY-TR RoHS compliant?

    Yes, the STPSC10H12GY-TR is RoHS compliant.

  9. Why is the STPSC10H12GY-TR suitable for hard switching conditions?

    It is suitable due to its wide band-gap material and low VF Schottky diode structure, which enhance performance in hard switching conditions.

  10. Where can I purchase the STPSC10H12GY-TR?

    The STPSC10H12GY-TR can be purchased from various electronic component distributors such as Mouser, JLCPCB, and the STMicroelectronics eStore.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:1.5 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:60 µA @ 1200 V
Capacitance @ Vr, F:725pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK
Operating Temperature - Junction:-40°C ~ 175°C
0 Remaining View Similar

In Stock

$7.15
100

Please send RFQ , we will respond immediately.

Same Series
STPSC10H12GY-TR
STPSC10H12GY-TR
DIODE SCHOTTKY 1.2KV 10A D2PAK

Similar Products

Part Number STPSC10H12GY-TR STPSC20H12GY-TR STPSC10H12G-TR
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 1200 V
Current - Average Rectified (Io) 10A 20A 10A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 10 A 1.5 V @ 20 A 1.5 V @ 10 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 60 µA @ 1200 V 120 µA @ 1200 V 60 µA @ 1200 V
Capacitance @ Vr, F 725pF @ 0V, 1MHz 1650pF @ 0V, 1MHz 725pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D²PAK D²PAK D²PAK
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

Related Product By Categories

PMEG2010AEBF
PMEG2010AEBF
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD523
PMEG2020EH,115
PMEG2020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 2A SOD123F
STTH108A
STTH108A
STMicroelectronics
DIODE GEN PURP 800V 1A SMA
STPS5L60SY
STPS5L60SY
STMicroelectronics
DIODE SCHOTTKY 60V 5A SMC
NRVUS1MFA
NRVUS1MFA
onsemi
DIODE GEN PURP 1A1000V SOD123-2
BAS40WQ-7-F
BAS40WQ-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT323 T&R 3K
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
MUR120RL
MUR120RL
onsemi
DIODE GEN PURP 200V 1A AXIAL
1N4004GP-M3/54
1N4004GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
SBRS8130LT3G-IR02
SBRS8130LT3G-IR02
onsemi
DIODE SCHOTTKY
BAS316-QF
BAS316-QF
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB

Related Product By Brand

STPSC10H12CWL
STPSC10H12CWL
STMicroelectronics
DIODE ARRAY SCHOTTKY 1200V TO247
STP24N60M2
STP24N60M2
STMicroelectronics
MOSFET N-CH 600V 18A TO220
STP6NK90ZFP
STP6NK90ZFP
STMicroelectronics
MOSFET N-CH 900V 5.8A TO220FP
TDA7418
TDA7418
STMicroelectronics
IC AUDIO SIGNAL PROCESSOR 20SO
TDA7439DS13TR
TDA7439DS13TR
STMicroelectronics
IC AUDIO TONE PROCESSOR 28SO
STA333BWJ13TR
STA333BWJ13TR
STMicroelectronics
IC FULLY INTEG PROC POWERSSO-36
STG3682QTR
STG3682QTR
STMicroelectronics
IC SWITCH DUAL SPDT 10QFN
TDA7498LTR
TDA7498LTR
STMicroelectronics
IC AMP D STEREO 80W POWERSSO36
LM293N
LM293N
STMicroelectronics
IC COMPARATOR LP DUAL 8-DIP
VIPER122LSTR
VIPER122LSTR
STMicroelectronics
IC OFFLINE SW MULT TOP 10SSOP
VNH7070ASTR
VNH7070ASTR
STMicroelectronics
IC MOTOR DRIVER 4V-28V 16SOIC
LD1085V18
LD1085V18
STMicroelectronics
IC REG LINEAR 1.8V 3A TO220AB