STPSC10H12GY-TR
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STMicroelectronics STPSC10H12GY-TR

Manufacturer No:
STPSC10H12GY-TR
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 1.2KV 10A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC10H12GY-TR is a silicon-carbide (SiC) Schottky diode produced by STMicroelectronics. This component is designed to offer high performance and efficiency in various power conversion applications. The SiC technology allows for low reverse recovery characteristics, which are crucial for energy savings and improved system reliability. The diode is particularly suited for use in hard switching conditions, making it an excellent choice for modern power electronics.

Key Specifications

Parameter Value
Type of Diode Schottky Rectifying
Case TO-263-2 (D2PAK)
Mounting SMD
Max. Off-State Voltage (V) 1200 V
Load Current (A) 10 A
Forward Voltage Drop (V) 1.5 V @ 10 A

Key Features

  • Low Reverse Recovery Characteristics: Enhances energy savings and system efficiency, especially in SMPS applications and emerging domains like solar energy conversion and EV/HEV charging stations.
  • Wide Band-Gap Material: Allows for the design of a low VF Schottky diode structure, contributing to improved performance in hard switching conditions.
  • High Voltage Rating: Rated at 1200 V, making it suitable for high-voltage applications.
  • High Current Capability: Supports a load current of up to 10 A, making it versatile for various power conversion needs.

Applications

  • Power Factor Correction (PFC): Ideal for PFC applications due to its low reverse recovery characteristics and high efficiency.
  • Secondary Side Applications: Suitable for use in the secondary side of power supplies, enhancing overall system performance.
  • Solar Energy Conversion: Used in solar energy conversion systems to improve efficiency and reduce energy losses.
  • Electric Vehicle (EV) and Hybrid Electric Vehicle (HEV) Charging Stations: Enhances the performance and efficiency of charging stations.

Q & A

  1. What is the STPSC10H12GY-TR diode made of?

    The STPSC10H12GY-TR diode is made of silicon-carbide (SiC) material.

  2. What is the maximum off-state voltage of the STPSC10H12GY-TR?

    The maximum off-state voltage is 1200 V.

  3. What is the load current rating of the STPSC10H12GY-TR?

    The load current rating is 10 A.

  4. What type of case does the STPSC10H12GY-TR use?

    The STPSC10H12GY-TR uses a TO-263-2 (D2PAK) case.

  5. What are the key benefits of using SiC technology in the STPSC10H12GY-TR?

    The key benefits include low reverse recovery characteristics, improved efficiency, and enhanced performance in hard switching conditions.

  6. Where can the STPSC10H12GY-TR be used?

    It can be used in PFC, secondary side applications, solar energy conversion, and EV/HEV charging stations.

  7. What is the forward voltage drop of the STPSC10H12GY-TR at 10 A?

    The forward voltage drop is 1.5 V at 10 A.

  8. Is the STPSC10H12GY-TR RoHS compliant?

    Yes, the STPSC10H12GY-TR is RoHS compliant.

  9. Why is the STPSC10H12GY-TR suitable for hard switching conditions?

    It is suitable due to its wide band-gap material and low VF Schottky diode structure, which enhance performance in hard switching conditions.

  10. Where can I purchase the STPSC10H12GY-TR?

    The STPSC10H12GY-TR can be purchased from various electronic component distributors such as Mouser, JLCPCB, and the STMicroelectronics eStore.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:1.5 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:60 µA @ 1200 V
Capacitance @ Vr, F:725pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK
Operating Temperature - Junction:-40°C ~ 175°C
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In Stock

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Same Series
STPSC10H12GY-TR
STPSC10H12GY-TR
DIODE SCHOTTKY 1.2KV 10A D2PAK

Similar Products

Part Number STPSC10H12GY-TR STPSC20H12GY-TR STPSC10H12G-TR
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 1200 V
Current - Average Rectified (Io) 10A 20A 10A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 10 A 1.5 V @ 20 A 1.5 V @ 10 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 60 µA @ 1200 V 120 µA @ 1200 V 60 µA @ 1200 V
Capacitance @ Vr, F 725pF @ 0V, 1MHz 1650pF @ 0V, 1MHz 725pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D²PAK D²PAK D²PAK
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

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