STPSC20H12G2Y-TR
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STMicroelectronics STPSC20H12G2Y-TR

Manufacturer No:
STPSC20H12G2Y-TR
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
H2PAK HC 2-3 LEADS
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC20H12G2Y-TR is an ultra-high performance power Schottky diode manufactured by STMicroelectronics. This 20 A, 1200 V SiC diode is built using a silicon carbide substrate, which allows for a wide band gap material design. This construction enables the diode to operate with a 1200 V rating and exhibits no or negligible reverse recovery at turn-off, along with minimal capacitive turn-off behavior that is independent of temperature. Housed in a D²PAK HV package, this diode is well-suited for applications in PFC (Power Factor Correction), EV charging stations, and DC/DC converters, facilitating compliance with IEC-60664-1 standards.

Key Specifications

Parameter Value Unit
VRRM (Repetitive Peak Reverse Voltage) 1200 V
IF(AV) (Average Forward Current) 20 A
IF(RMS) (Forward RMS Current) 38 A
IFRM (Repetitive Peak Forward Current) 78 A
IFSM (Surge Non-Repetitive Forward Current) 140 A
Tstg (Storage Temperature Range) -65 to +175 °C
Tj (Operating Junction Temperature) -40 to +175 °C
VF (Forward Voltage Drop) 1.35 - 1.50 V
IR (Reverse Leakage Current) 120 - 800 µA
Rth(j-c) (Junction to Case Thermal Resistance) 0.30 - 0.45 °C/W

Key Features

  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Robust high voltage periphery
  • Operating junction temperature range from -40 °C to 175 °C
  • Low forward voltage drop (VF)
  • D²PAK HV package with a creepage distance (anode to cathode) of 5.38 mm min.
  • ECOPACK2 compliant

Applications

  • PFC (Power Factor Correction) applications
  • EV Charging stations
  • DC/DC converters
  • Compliance with IEC-60664-1 standards

Q & A

  1. What is the maximum repetitive peak reverse voltage of the STPSC20H12G2Y-TR?

    The maximum repetitive peak reverse voltage (VRRM) is 1200 V.

  2. What is the average forward current rating of this diode?

    The average forward current (IF(AV)) is 20 A.

  3. What is the operating junction temperature range of the STPSC20H12G2Y-TR?

    The operating junction temperature range is from -40 °C to 175 °C.

  4. Does the STPSC20H12G2Y-TR exhibit reverse recovery at turn-off?

    No, this diode exhibits no or negligible reverse recovery at turn-off.

  5. What package type is used for the STPSC20H12G2Y-TR?

    The diode is housed in a D²PAK HV package.

  6. What is the creepage distance between the anode and cathode in the D²PAK HV package?

    The creepage distance between the anode and cathode is 5.38 mm min.

  7. Is the STPSC20H12G2Y-TR compliant with environmental standards?

    Yes, it is ECOPACK2 compliant.

  8. What are some typical applications for the STPSC20H12G2Y-TR?

    Typical applications include PFC, EV charging stations, and DC/DC converters.

  9. What is the forward voltage drop (VF) of the STPSC20H12G2Y-TR?

    The forward voltage drop (VF) is typically 1.35 V to 1.50 V.

  10. What is the maximum surge non-repetitive forward current (IFSM) of the diode?

    The maximum surge non-repetitive forward current (IFSM) is 140 A.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):20A
Voltage - Forward (Vf) (Max) @ If:1.5 V @ 20 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:120 µA @ 1200 V
Capacitance @ Vr, F:1650pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D2PAK HV
Operating Temperature - Junction:-40°C ~ 175°C
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$12.71
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Similar Products

Part Number STPSC20H12G2Y-TR STPSC20H12GY-TR
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V
Current - Average Rectified (Io) 20A 20A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 20 A 1.5 V @ 20 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) - 0 ns
Current - Reverse Leakage @ Vr 120 µA @ 1200 V 120 µA @ 1200 V
Capacitance @ Vr, F 1650pF @ 0V, 1MHz 1650pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK HV D²PAK
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C

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