STPSC20H12G2Y-TR
  • Share:

STMicroelectronics STPSC20H12G2Y-TR

Manufacturer No:
STPSC20H12G2Y-TR
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
H2PAK HC 2-3 LEADS
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC20H12G2Y-TR is an ultra-high performance power Schottky diode manufactured by STMicroelectronics. This 20 A, 1200 V SiC diode is built using a silicon carbide substrate, which allows for a wide band gap material design. This construction enables the diode to operate with a 1200 V rating and exhibits no or negligible reverse recovery at turn-off, along with minimal capacitive turn-off behavior that is independent of temperature. Housed in a D²PAK HV package, this diode is well-suited for applications in PFC (Power Factor Correction), EV charging stations, and DC/DC converters, facilitating compliance with IEC-60664-1 standards.

Key Specifications

Parameter Value Unit
VRRM (Repetitive Peak Reverse Voltage) 1200 V
IF(AV) (Average Forward Current) 20 A
IF(RMS) (Forward RMS Current) 38 A
IFRM (Repetitive Peak Forward Current) 78 A
IFSM (Surge Non-Repetitive Forward Current) 140 A
Tstg (Storage Temperature Range) -65 to +175 °C
Tj (Operating Junction Temperature) -40 to +175 °C
VF (Forward Voltage Drop) 1.35 - 1.50 V
IR (Reverse Leakage Current) 120 - 800 µA
Rth(j-c) (Junction to Case Thermal Resistance) 0.30 - 0.45 °C/W

Key Features

  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Robust high voltage periphery
  • Operating junction temperature range from -40 °C to 175 °C
  • Low forward voltage drop (VF)
  • D²PAK HV package with a creepage distance (anode to cathode) of 5.38 mm min.
  • ECOPACK2 compliant

Applications

  • PFC (Power Factor Correction) applications
  • EV Charging stations
  • DC/DC converters
  • Compliance with IEC-60664-1 standards

Q & A

  1. What is the maximum repetitive peak reverse voltage of the STPSC20H12G2Y-TR?

    The maximum repetitive peak reverse voltage (VRRM) is 1200 V.

  2. What is the average forward current rating of this diode?

    The average forward current (IF(AV)) is 20 A.

  3. What is the operating junction temperature range of the STPSC20H12G2Y-TR?

    The operating junction temperature range is from -40 °C to 175 °C.

  4. Does the STPSC20H12G2Y-TR exhibit reverse recovery at turn-off?

    No, this diode exhibits no or negligible reverse recovery at turn-off.

  5. What package type is used for the STPSC20H12G2Y-TR?

    The diode is housed in a D²PAK HV package.

  6. What is the creepage distance between the anode and cathode in the D²PAK HV package?

    The creepage distance between the anode and cathode is 5.38 mm min.

  7. Is the STPSC20H12G2Y-TR compliant with environmental standards?

    Yes, it is ECOPACK2 compliant.

  8. What are some typical applications for the STPSC20H12G2Y-TR?

    Typical applications include PFC, EV charging stations, and DC/DC converters.

  9. What is the forward voltage drop (VF) of the STPSC20H12G2Y-TR?

    The forward voltage drop (VF) is typically 1.35 V to 1.50 V.

  10. What is the maximum surge non-repetitive forward current (IFSM) of the diode?

    The maximum surge non-repetitive forward current (IFSM) is 140 A.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):20A
Voltage - Forward (Vf) (Max) @ If:1.5 V @ 20 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:120 µA @ 1200 V
Capacitance @ Vr, F:1650pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D2PAK HV
Operating Temperature - Junction:-40°C ~ 175°C
0 Remaining View Similar

In Stock

$12.71
70

Please send RFQ , we will respond immediately.

Same Series
DD62M3200T20/AA
DD62M3200T20/AA
CONN D-SUB HD PLUG 62P VERT SLDR
CBC9W4S10HE2X/AA
CBC9W4S10HE2X/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20W0S/AA
DD15S20W0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV50/AA
CBC13W3S10HV50/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20JV3S/AA
DD15S20JV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WV5S/AA
DD15S20WV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HE30/AA
DD26M20HE30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S0T2X/AA
DD26S2S0T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JVLS
DD15S20JVLS
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S3200T20
DD44S3200T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0T2X/AA
DD44S32S0T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S5W0X/AA
DD26S2S5W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number STPSC20H12G2Y-TR STPSC20H12GY-TR
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V
Current - Average Rectified (Io) 20A 20A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 20 A 1.5 V @ 20 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) - 0 ns
Current - Reverse Leakage @ Vr 120 µA @ 1200 V 120 µA @ 1200 V
Capacitance @ Vr, F 1650pF @ 0V, 1MHz 1650pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK HV D²PAK
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C

Related Product By Categories

STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
BAS21Q-13-F
BAS21Q-13-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
PMEG4010ETR/B115
PMEG4010ETR/B115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
MBR2H100SFT3G
MBR2H100SFT3G
onsemi
DIODE SCHOTTKY 100V 2A SOD123FL
MUR1520G
MUR1520G
onsemi
DIODE GEN PURP 200V 15A TO220-2
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
MUR160A
MUR160A
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
MUR120-E3/73
MUR120-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
1N4004GP-M3/54
1N4004GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC

Related Product By Brand

SM6T12CA
SM6T12CA
STMicroelectronics
TVS DIODE 10.2VWM 21.7VC SMB
BD438
BD438
STMicroelectronics
TRANS PNP 45V 4A SOT32-3
STH15NB50FI
STH15NB50FI
STMicroelectronics
MOSFET N-CH 500V 10.5A ISOWAT218
STHVDAC-303F6
STHVDAC-303F6
STMicroelectronics
IC DAC 8BIT 16FLIPCHIP
STM32F423RHT6
STM32F423RHT6
STMicroelectronics
IC MCU 32BIT 1.5MB FLASH 64LQFP
STM32L4A6QGI6P
STM32L4A6QGI6P
STMicroelectronics
IC MCU 32BIT 1MB FLASH 132UFBGA
STM32L476VGT6U
STM32L476VGT6U
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
LM239DT
LM239DT
STMicroelectronics
IC COMP QUAD LOW PWR 14SOIC
M27C2001-10F1
M27C2001-10F1
STMicroelectronics
IC EPROM 2MBIT PARALLEL 32CDIP
VN750PSTR-E
VN750PSTR-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
VNQ6040S-E
VNQ6040S-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
LF90CPT-TR
LF90CPT-TR
STMicroelectronics
IC REG LINEAR 9V 500MA PPAK