STPSC10H12DY
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STMicroelectronics STPSC10H12DY

Manufacturer No:
STPSC10H12DY
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE SCHOTTKY 1.2KV 10A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STPSC10H12DY is an automotive-grade 1200 V power Schottky silicon carbide diode manufactured by STMicroelectronics. This ultrahigh performance power Schottky rectifier is designed using a silicon carbide substrate, which allows for a low forward voltage drop (VF) and high voltage rating. The diode is available in TO-220AC and D²PAK packages, making it versatile for various applications. It is especially suited for use in Power Factor Correction (PFC) and secondary side applications, enhancing performance in hard switching conditions.

Key Specifications

Symbol Parameter Value Unit
IF(AV) Average forward current 10 A
VRRM Repetitive peak reverse voltage 1200 V
Tj(max.) Operating junction temperature range -40 to +175 °C
VF(typ.) Forward voltage drop at 25°C, IF = 10 A 1.35 V
IFRM Repetitive peak forward current 38 A
IFSM Surge non-repetitive forward current (tp = 10 ms, sinusoidal) 71 (at 25°C), 60 (at 150°C) A
Tstg Storage temperature range -65 to +175 °C
Rth(j-c) Junction to case thermal resistance 0.65 to 0.9 °C/W

Key Features

  • AEC-Q101 qualified, ensuring automotive-grade reliability.
  • No or negligible reverse recovery, reducing switching losses.
  • Switching behavior independent of temperature, providing consistent performance.
  • Robust high voltage periphery, enhancing durability.
  • PPAP (Production Part Approval Process) capable, meeting stringent quality standards.
  • Operating junction temperature range from -40°C to 175°C, suitable for a wide range of environments.
  • ECOPACK®2 compliant, meeting environmental requirements.
  • High forward surge capability, ensuring robustness during transient phases.

Applications

The STPSC10H12DY is particularly suited for use in:

  • Power Factor Correction (PFC) applications, where high efficiency and low losses are critical.
  • Secondary side applications, such as in DC-DC converters and power supplies.
  • Automotive systems, where the AEC-Q101 qualification ensures reliability and performance under harsh conditions.

Q & A

  1. What is the maximum operating junction temperature of the STPSC10H12DY?

    The maximum operating junction temperature is 175°C.

  2. What is the typical forward voltage drop of the STPSC10H12DY at 25°C?

    The typical forward voltage drop at 25°C with IF = 10 A is 1.35 V.

  3. What are the package options available for the STPSC10H12DY?

    The diode is available in TO-220AC and D²PAK packages.

  4. Is the STPSC10H12DY AEC-Q101 qualified?
  5. What is the repetitive peak reverse voltage of the STPSC10H12DY?

    The repetitive peak reverse voltage is 1200 V.

  6. What is the average forward current rating of the STPSC10H12DY?

    The average forward current rating is 10 A.

  7. Does the STPSC10H12DY have any reverse recovery time?

    No, the STPSC10H12DY has negligible reverse recovery time.

  8. What is the storage temperature range for the STPSC10H12DY?

    The storage temperature range is -65°C to +175°C.

  9. Is the STPSC10H12DY ECOPACK® compliant?
  10. What are some typical applications for the STPSC10H12DY?

    Typical applications include Power Factor Correction (PFC), secondary side applications, and automotive systems.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:1.5 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:60 µA @ 1200 V
Capacitance @ Vr, F:725pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:-40°C ~ 175°C
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Same Series
STPSC10H12GY-TR
STPSC10H12GY-TR
DIODE SCHOTTKY 1.2KV 10A D2PAK

Similar Products

Part Number STPSC10H12DY STPSC15H12DY STPSC20H12DY STPSC10H12D
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 1200 V 1200 V
Current - Average Rectified (Io) 10A 15A 20A 10A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 10 A 1.5 V @ 15 A 1.5 V @ 20 A 1.5 V @ 10 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 60 µA @ 1200 V 90 µA @ 1200 V 120 µA @ 1200 V 60 µA @ 1200 V
Capacitance @ Vr, F 725pF @ 0V, 1MHz 1200pF @ 0V, 1MHz 1650pF @ 0V, 1MHz 725pF @ 0V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220AC TO-220AC TO-220AC TO-220AC
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

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