Overview
The STPSC10H12D is an ultrahigh performance power Schottky rectifier manufactured by STMicroelectronics using a silicon carbide substrate. This diode is designed with a low forward voltage drop (VF) structure and features a 1200 V rating, making it highly suitable for applications requiring high voltage and efficiency. The STPSC10H12D is available in various packages including TO-220AC, DPAK HV, D²PAK, and DO-247 LL, ensuring versatility in different design scenarios. Its Schottky construction eliminates reverse recovery and minimizes capacitive turn-off behavior, which is independent of temperature, enhancing performance in hard switching conditions.
Key Specifications
| Parameter | Value |
|---|---|
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 10 A |
| Maximum Forward Voltage (VF) | 2.25 V |
| Maximum Forward Impulse Current | 420 A |
| Operating Temperature Range | -40 °C to 175 °C |
| Junction Temperature (Max) | 175 °C |
| Package | TO-220AC, DPAK HV, D²PAK, DO-247 LL |
| RoHS Compliance Grade | Ecopack2 |
Key Features
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Robust high voltage periphery
- Low forward voltage drop (VF)
- High forward surge capability
- ECOPACK®2 compliant
Applications
The STPSC10H12D is especially suited for use in Power Factor Correction (PFC) and secondary side applications. It is also beneficial in emerging domains such as solar energy conversion, electric vehicle (EV) or hybrid electric vehicle (HEV) charging stations, and other high-efficiency power conversion systems.
Q & A
- What is the maximum DC reverse voltage of the STPSC10H12D?
The maximum DC reverse voltage is 1200 V. - What is the average rectified current rating of the STPSC10H12D?
The average rectified current rating is 10 A. - What are the available package types for the STPSC10H12D?
The available packages include TO-220AC, DPAK HV, D²PAK, and DO-247 LL. - What is the maximum junction temperature of the STPSC10H12D?
The maximum junction temperature is 175 °C. - Is the STPSC10H12D RoHS compliant?
Yes, it is ECOPACK®2 compliant. - What are the key benefits of using a silicon carbide substrate in the STPSC10H12D?
The silicon carbide substrate allows for a low VF Schottky diode structure, eliminates reverse recovery, and minimizes capacitive turn-off behavior. - In which applications is the STPSC10H12D particularly useful?
It is particularly useful in PFC, secondary side applications, solar energy conversion, EV or HEV charging stations, and other high-efficiency power conversion systems. - What is the operating temperature range of the STPSC10H12D?
The operating temperature range is from -40 °C to 175 °C. - Does the STPSC10H12D exhibit temperature-dependent switching behavior?
No, the switching behavior is independent of temperature. - What is the maximum forward impulse current of the STPSC10H12D?
The maximum forward impulse current is 420 A.
