M95M04-DRDW6TP
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STMicroelectronics M95M04-DRDW6TP

Manufacturer No:
M95M04-DRDW6TP
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
IC EEPROM 4MBIT SPI 10MHZ 8TSSOP
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The M95M04-DRDW6TP is a 4-Mbit serial SPI bus EEPROM produced by STMicroelectronics. This device is electrically erasable programmable memory, organized as 524,288 x 8 bits, and is accessed through the SPI bus. It operates with a supply voltage range from 1.8 to 5.5 V and is guaranteed over a temperature range of -40 °C to +85 °C. The M95M04-DRDW6TP features an additional 512-byte identification page that can be used to store sensitive application parameters and can be permanently locked in read-only mode.

Key Specifications

Specification Details
Memory Capacity 4 Mbit (512 Kbytes) of EEPROM
Page Size 512 bytes
Additional Page Identification page (512 bytes), lockable in read-only mode
Write Time Byte write: 5 ms, Page write: 5 ms
Write Protect Quarter array, half array, whole memory array
Max Clock Frequency 10 MHz for VCC ≥ 2.5 V, 5 MHz for VCC ≥ 1.8 V
Supply Voltage 1.8 V to 5.5 V
Operating Temperature Range -40 °C to +85 °C
ESD Protection Up to 4 kV in human body model
Write Cycles More than 4 million write cycles
Data Retention More than 40 years
Packages SO8N, TSSOP8, WLCSP

Key Features

  • Compatible with the serial peripheral interface (SPI) bus
  • Fast data access and storage through SPI bus with a maximum clock frequency of 10 MHz
  • Low power consumption: 2 μA in standby mode, 3 mA during read and write operations at 1.8 V
  • Enhanced ESD protection up to 4 kV in human body model
  • High endurance: more than 4 million write cycles and more than 40 years of data retention
  • Flexible write protection: quarter array, half array, and whole memory array protection
  • Additional lockable identification page for sensitive data

Applications

  • Data logging applications where high write endurance is required
  • Storage of manufacturing traceability, calibration, user settings, error flags, and monitoring data
  • Use in evaluation boards such as the X-NUCLEO-EEPRMA2 for external storage needs
  • Industrial and automotive systems requiring reliable and durable memory solutions

Q & A

  1. What is the memory capacity of the M95M04-DRDW6TP?

    The M95M04-DRDW6TP has a memory capacity of 4 Mbit (512 Kbytes) of EEPROM.

  2. What is the maximum clock frequency of the SPI bus for this device?

    The maximum clock frequency is 10 MHz for VCC ≥ 2.5 V and 5 MHz for VCC ≥ 1.8 V.

  3. How long does it take to write a page to the M95M04-DRDW6TP?

    The write time for a page is within 5 ms.

  4. What is the operating temperature range of the M95M04-DRDW6TP?

    The device operates over a temperature range of -40 °C to +85 °C.

  5. What kind of ESD protection does the M95M04-DRDW6TP offer?

    The device offers ESD protection up to 4 kV in the human body model.

  6. How many write cycles can the M95M04-DRDW6TP endure?

    The device can endure more than 4 million write cycles.

  7. What is the data retention period of the M95M04-DRDW6TP?

    The data retention period is more than 40 years.

  8. What types of packages are available for the M95M04-DRDW6TP?

    The device is available in SO8N, TSSOP8, and WLCSP packages.

  9. Can the identification page be locked in read-only mode?
  10. What are some common applications for the M95M04-DRDW6TP?

Product Attributes

Memory Type:Non-Volatile
Memory Format:EEPROM
Technology:EEPROM
Memory Size:4Mb (512K x 8)
Memory Interface:SPI
Clock Frequency:10 MHz
Write Cycle Time - Word, Page:5ms
Access Time:- 
Voltage - Supply:1.8V ~ 5.5V
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package:8-TSSOP
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