M95040-DRDW8TP/K
  • Share:

STMicroelectronics M95040-DRDW8TP/K

Manufacturer No:
M95040-DRDW8TP/K
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
IC EEPROM 4KBIT SPI 20MHZ 8TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The M95040-DRDW8TP/K is a 4-Kbit serial EEPROM device produced by STMicroelectronics. This device operates up to 105 °C and is compliant with the reliability standards defined by the AEC-Q100 grade 2. It features a simple serial SPI compatible interface that can run up to 20 MHz. The memory array is based on advanced true EEPROM technology, organized as 32 pages of 16 bytes each, with an embedded Error Correction Code logic to enhance data integrity. Additionally, it includes an Identification Page for storing device identification and application-specific parameters, which can be permanently locked in read-only mode.

Key Specifications

Specification Value
Memory Capacity 4 Kbit (512 bytes)
Page Size 16 bytes
Write Protection 1/4, 1/2 or whole memory
Identification Page 16 bytes (lockable in read-only mode)
Operating Temperature Up to 105 °C
Supply Voltage (VCC) 1.7 V to 5.5 V
Clock Frequency 20 MHz (VCC ≥ 4.5 V), 10 MHz (VCC ≥ 2.5 V), 5 MHz (VCC ≥ 1.7 V)
Write Cycle Time Byte Write within 4 ms, Page Write within 4 ms
Write Cycle Endurance 4 million cycles at 25 °C, 1.2 million cycles at 85 °C, 900 k cycles at 105 °C
Data Retention More than 50 years at 105 °C, 200 years at 55 °C
ESD Protection 4000 V (Human Body Model)
Packages RoHS-compliant and halogen-free (ECOPACK2®), TSSOP-8L, SO8, DFN8

Key Features

  • Compatible with the Serial Peripheral Interface (SPI) bus
  • Memory array: 4 Kbit (512 bytes) of EEPROM
  • Page size: 16 bytes
  • Write protection by block: 1/4, 1/2 or whole memory
  • Additional Write lockable Identification Page (16 bytes)
  • Extended temperature and voltage range: Up to 105 °C (VCC from 1.7 V to 5.5 V)
  • High speed clock frequency: Up to 20 MHz
  • Schmitt trigger inputs for noise filtering
  • Short Write cycle time: Byte Write within 4 ms, Page Write within 4 ms
  • Write cycle endurance: 4 million Write cycles at 25 °C, 1.2 million at 85 °C, 900 k at 105 °C
  • Data retention: More than 50 years at 105 °C, 200 years at 55 °C
  • ESD Protection (Human Body Model): 4000 V
  • Rohs-compliant and halogen-free packages (ECOPACK2®)

Applications

The M95040-DRDW8TP/K is suitable for a variety of applications that require reliable and high-speed non-volatile memory. These include:

  • Automotive systems: Given its compliance with AEC-Q100 grade 2, it is ideal for automotive applications where reliability and temperature stability are critical.
  • Industrial control systems: The device's extended temperature range and robust write cycle endurance make it suitable for industrial environments.
  • Consumer electronics: It can be used in various consumer electronic devices that require non-volatile memory with high reliability and data integrity.
  • Medical devices: The high reliability and data retention capabilities make it a good fit for medical devices that require stable and secure data storage.

Q & A

  1. What is the memory capacity of the M95040-DRDW8TP/K?

    The memory capacity is 4 Kbit (512 bytes) organized as 32 pages of 16 bytes each.

  2. What is the operating temperature range of the M95040-DRDW8TP/K?

    The device operates up to 105 °C.

  3. What is the clock frequency of the M95040-DRDW8TP/K?

    The clock frequency can be up to 20 MHz depending on the supply voltage (VCC ≥ 4.5 V).

  4. How is the write protection implemented in the M95040-DRDW8TP/K?

    The device offers write protection by block: 1/4, 1/2 or whole memory.

  5. What is the purpose of the Identification Page in the M95040-DRDW8TP/K?

    The Identification Page (16 bytes) is used to store device identification and application-specific parameters, which can be permanently locked in read-only mode.

  6. What is the write cycle endurance of the M95040-DRDW8TP/K?

    The write cycle endurance is 4 million cycles at 25 °C, 1.2 million cycles at 85 °C, and 900 k cycles at 105 °C.

  7. How long does the data retention last in the M95040-DRDW8TP/K?

    The data retention is more than 50 years at 105 °C and 200 years at 55 °C.

  8. What kind of ESD protection does the M95040-DRDW8TP/K have?

    The device has ESD protection of 4000 V (Human Body Model).

  9. Is the M95040-DRDW8TP/K RoHS-compliant?
  10. What are the available packages for the M95040-DRDW8TP/K?

    The available packages include TSSOP-8L, SO8, and DFN8.

  11. What is the significance of AEC-Q100 grade 2 compliance for the M95040-DRDW8TP/K?

    AEC-Q100 grade 2 compliance indicates that the device meets the reliability standards for automotive applications, ensuring high reliability and performance under various conditions.

Product Attributes

Memory Type:Non-Volatile
Memory Format:EEPROM
Technology:EEPROM
Memory Size:4Kb (512 x 8)
Memory Interface:SPI
Clock Frequency:20 MHz
Write Cycle Time - Word, Page:4ms
Access Time:- 
Voltage - Supply:1.8V ~ 5.5V
Operating Temperature:-40°C ~ 105°C (TA)
Mounting Type:Surface Mount
Package / Case:8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package:8-TSSOP
0 Remaining View Similar

In Stock

$0.27
1,893

Please send RFQ , we will respond immediately.

Same Series
M95040-DRMN8TP/K
M95040-DRMN8TP/K
IC EEPROM 4KBIT SPI 20MHZ 8SO

Similar Products

Part Number M95040-DRDW8TP/K M95080-DRDW8TP/K M95040-DRDW3TP/K
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
Memory Type Non-Volatile Non-Volatile Non-Volatile
Memory Format EEPROM EEPROM EEPROM
Technology EEPROM EEPROM EEPROM
Memory Size 4Kb (512 x 8) 8Kb (1K x 8) 4Kb (512 x 8)
Memory Interface SPI SPI SPI
Clock Frequency 20 MHz 20 MHz 20 MHz
Write Cycle Time - Word, Page 4ms 4ms 4ms
Access Time - - -
Voltage - Supply 1.8V ~ 5.5V 1.8V ~ 5.5V 1.8V ~ 5.5V
Operating Temperature -40°C ~ 105°C (TA) -40°C ~ 105°C (TA) -40°C ~ 125°C (TA)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package 8-TSSOP 8-TSSOP 8-TSSOP

Related Product By Categories

M24C16-RMC6TG
M24C16-RMC6TG
STMicroelectronics
IC EEPROM 16KBIT I2C 400KHZ 8MLP
W971GG6NB-25
W971GG6NB-25
Winbond Electronics
IC DRAM 1GBIT PARALLEL 84WBGA
GD25Q32CSIGR
GD25Q32CSIGR
GigaDevice Semiconductor (HK) Limited
IC FLASH 32MBIT SPI/QUAD 8SOP
M24128X-FCU6T/TF
M24128X-FCU6T/TF
STMicroelectronics
IC EEPROM 128KBIT I2C 4WLCSP
AT24C02-10PC
AT24C02-10PC
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8DIP
M93C46-WMN6T
M93C46-WMN6T
STMicroelectronics
IC EEPROM 1KBIT SPI 2MHZ 8SO
M25P10-AVMN6P
M25P10-AVMN6P
Micron Technology Inc.
IC FLASH 1MBIT SPI 50MHZ 8SO
M24C64-WBN6P
M24C64-WBN6P
STMicroelectronics
IC EEPROM 64KBIT I2C 1MHZ 8DIP
M27C4001-80N6
M27C4001-80N6
STMicroelectronics
IC EPROM 4MBIT PARALLEL 32TSOP
M27C4002-90C1
M27C4002-90C1
STMicroelectronics
IC EPROM 4MBIT PARALLEL 44PLCC
M25P32-VMP6G
M25P32-VMP6G
Micron Technology Inc.
IC FLSH 32MBIT SPI 75MHZ 8VFQFPN
S29AL016J70TFI020
S29AL016J70TFI020
Infineon Technologies
IC FLASH 16MBIT PARALLEL 48TSOP

Related Product By Brand

SM6T24CAY
SM6T24CAY
STMicroelectronics
TVS DIODE 20.5VWM 42.8VC SMB
TMMDB3TG
TMMDB3TG
STMicroelectronics
DIAC 30-34V 2A MINIMELF
STF140N6F7
STF140N6F7
STMicroelectronics
MOSFET N-CH 60V 70A TO220FP
STD10NF30
STD10NF30
STMicroelectronics
MOSFET N-CHANNEL 300V 10A DPAK
STH410N4F7-6AG
STH410N4F7-6AG
STMicroelectronics
MOSFET N-CH 40V 200A H2PAK-6
STM32F207ZET6TR
STM32F207ZET6TR
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM32L071RZT6
STM32L071RZT6
STMicroelectronics
IC MCU 32BIT 192KB FLASH 64LQFP
ST232BD
ST232BD
STMicroelectronics
IC TRANSCEIVER FULL 2/2 16SO
TDA7360HS
TDA7360HS
STMicroelectronics
IC AMP AB MONO/STER 11MULTIWATT
TS393IPT
TS393IPT
STMicroelectronics
IC COMPARATOR DUAL MCRPWR 8TSSOP
L6375D013TR
L6375D013TR
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 20SOIC
LD39130SJ18R
LD39130SJ18R
STMicroelectronics
IC REG LIN 1.8V 300MA 4FLIPCHIP