Overview
The D45H11FP is a PNP power transistor manufactured by STMicroelectronics. It is part of a complementary pair with the NPN transistor D44H11FP. These transistors are designed for general-purpose use in both linear and switching applications. They are housed in fully isolated TO-220FP packages, which are environmentally compliant and available in various ECOPACK® grades. The devices are produced using multi-epitaxial planar technology, ensuring reliable performance in a variety of operating conditions.
Key Specifications
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VCEO | Collector-emitter voltage (IB = 0) | 80 | V |
| VEBO | Emitter-base voltage (IC = 0) | 5 | V |
| IC | Collector current | 10 | A |
| ICM | Collector peak current | 20 | A |
| PTOT | Total dissipation at Tcase = 25 °C | 36 | W |
| TSTG | Storage temperature | -55 to 150 | °C |
| TJ | Max. operating junction temperature | 150 | °C |
| RthJC | Thermal resistance junction-case max | 3.5 | °C/W |
| RthJA | Thermal resistance junction-ambient max | 62.5 | °C/W |
| VCE(sat) | Collector-emitter saturation voltage | 1 | V |
| VBE(sat) | Base-emitter saturation voltage | 1.5 | V |
| hFE | DC current gain | 40-60 |
Key Features
- Low collector-emitter saturation voltage, ensuring efficient operation.
- Fast switching speed, making it suitable for high-frequency applications.
- Housed in fully isolated TO-220FP packages, providing good thermal performance and environmental compliance.
- Manufactured using multi-epitaxial planar technology for reliable performance in linear and switching applications.
- High DC current gain, ranging from 40 to 60, depending on the collector current.
Applications
- Power amplifiers: Suitable for applications requiring high current and low saturation voltage.
- Switching circuits: Ideal for high-speed switching applications due to its fast switching characteristics.
- Regulator circuits: Can be used in voltage regulator circuits where fast response and low voltage drop are essential.
Q & A
- What is the maximum collector-emitter voltage for the D45H11FP transistor?
The maximum collector-emitter voltage (VCEO) is 80 V.
- What is the maximum collector current for the D45H11FP transistor?
The maximum collector current (IC) is 10 A, with a peak current (ICM) of 20 A.
- What is the thermal resistance junction-case for the D45H11FP transistor?
The thermal resistance junction-case (RthJC) is 3.5 °C/W.
- What are the typical applications of the D45H11FP transistor?
The D45H11FP is typically used in power amplifiers, switching circuits, and regulator circuits.
- What is the collector-emitter saturation voltage for the D45H11FP transistor?
The collector-emitter saturation voltage (VCE(sat)) is approximately 1 V.
- What is the base-emitter saturation voltage for the D45H11FP transistor?
The base-emitter saturation voltage (VBE(sat)) is approximately 1.5 V.
- What is the DC current gain of the D45H11FP transistor?
The DC current gain (hFE) ranges from 40 to 60, depending on the collector current.
- What is the storage temperature range for the D45H11FP transistor?
The storage temperature range (TSTG) is -55 to 150 °C.
- What is the maximum operating junction temperature for the D45H11FP transistor?
The maximum operating junction temperature (TJ) is 150 °C.
- Is the D45H11FP transistor environmentally compliant?
