Overview
The D44H11FP is a complementary power transistor produced by STMicroelectronics. This transistor is part of a pair, with the D44H11FP being the NPN type and its complementary PNP counterpart. It is housed in a fully isolated TO-220FP package, which is designed to provide high thermal performance and electrical isolation. The D44H11FP is manufactured using multi-epitaxial planar technology, ensuring robust and reliable operation in various power applications.
Key Specifications
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (VCEO) | 80 V |
| Collector Current (IC) | 10 A |
| Collector Cutoff Current (ICES) | 10 μA (VCE = Rated VCEO, VBE = 0) |
| Emitter Cutoff Current (IEBO) | 10 μA (VEB = 5.0 Vdc) |
| DC Current Gain (hFE) | 60 (VCE = 1.0 Vdc, IC = 2.0 Adc) |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.0 Vdc (IC = 8.0 Adc, IB = 0.4 Adc) |
| Base-Emitter Saturation Voltage (VBE(sat)) | 1.5 Vdc (IC = 8.0 Adc, IB = 0.8 Adc) |
| Collector Capacitance (Ccb) | 90 pF (VCB = 10 Vdc, ftest = 1.0 MHz) |
| Gain Bandwidth Product (fT) | 50 MHz (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) |
| Switching Times (td + tr) | 300 ns (IC = 5.0 Adc, IB1 = 0.5 Adc) |
| Storage Time (ts) | 500 ns (IC = 5.0 Adc, IB1 = IB2 = 0.5 Adc) |
| Fall Time (tf) | 140 ns (IC = 5.0 Adc, IB1 = IB2 = 0.5 Adc) |
Key Features
- High collector current of up to 10 A, making it suitable for high-power applications.
- Collector-emitter voltage of 80 V, providing robust performance under various operating conditions.
- Low collector-emitter saturation voltage (VCE(sat)) of 1.0 V, which minimizes power losses.
- High DC current gain (hFE) of up to 60, ensuring efficient current amplification.
- Fully isolated TO-220FP package for enhanced thermal performance and electrical isolation.
- Multi-epitaxial planar technology for reliable operation.
- Fast switching times, including a delay and rise time of 300 ns and a fall time of 140 ns.
Applications
The D44H11FP transistor is designed for use in a variety of power applications, including:
- Power amplifiers and switching circuits.
- Motor control and drive systems.
- Power supplies and DC-DC converters.
- Automotive systems, such as battery management and power distribution.
- Industrial control systems and automation.
Q & A
- What is the collector-emitter voltage (VCEO) of the D44H11FP transistor?
The collector-emitter voltage (VCEO) of the D44H11FP transistor is 80 V. - What is the maximum collector current (IC) of the D44H11FP transistor?
The maximum collector current (IC) of the D44H11FP transistor is 10 A. - What is the DC current gain (hFE) of the D44H11FP transistor?
The DC current gain (hFE) of the D44H11FP transistor is up to 60. - What is the collector-emitter saturation voltage (VCE(sat)) of the D44H11FP transistor?
The collector-emitter saturation voltage (VCE(sat)) of the D44H11FP transistor is 1.0 V. - What package type is the D44H11FP transistor housed in?
The D44H11FP transistor is housed in a fully isolated TO-220FP package. - What are some typical applications of the D44H11FP transistor?
The D44H11FP transistor is typically used in power amplifiers, motor control systems, power supplies, automotive systems, and industrial control systems. - What is the gain bandwidth product (fT) of the D44H11FP transistor?
The gain bandwidth product (fT) of the D44H11FP transistor is 50 MHz. - What are the switching times of the D44H11FP transistor?
The switching times include a delay and rise time of 300 ns and a fall time of 140 ns. - Is the D44H11FP transistor RoHS compliant?
Yes, the D44H11FP transistor is RoHS compliant. - What technology is used in the manufacturing of the D44H11FP transistor?
The D44H11FP transistor is manufactured using multi-epitaxial planar technology.
