RB751S-40FHTE61
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Rohm Semiconductor RB751S-40FHTE61

Manufacturer No:
RB751S-40FHTE61
Manufacturer:
Rohm Semiconductor
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY SMD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The RB751S-40FHTE61 is a Schottky barrier diode produced by ROHM Semiconductor. This component is designed for high-speed switching applications, circuit protection, and voltage clamping. It is housed in an ultra-small, flat lead SOD523 (SC-79) Surface-Mounted Device (SMD) plastic package, making it ideal for hand-held and portable applications where space is limited.

Key Specifications

Parameter Symbol Value Unit
Peak Reverse Voltage VRM 40 V
Reverse Voltage VR 30 V
Forward Continuous Current (DC) IF 30 mA
Peak Forward Surge Current IFSM 500 mA
Forward Voltage (Typical at IF = 1.0 mA DC) VF 0.28 V
Reverse Leakage Current (Typical at VR = 30 V) IR 0.5 µA
Total Capacitance (Typical at VR = 1.0 V, f = 1.0 MHz) CT 2.0 - 2.5 pF
Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C
Package Type SOD523 (SC-79)

Key Features

  • Extremely fast switching speed, making it suitable for high-speed applications.
  • Extremely low forward voltage (typical 0.28 V at IF = 1.0 mA DC), reducing conduction loss.
  • Low reverse current and low capacitance.
  • Lead-free plating and RoHS compliant, ensuring environmental sustainability.
  • Integrated guard ring for stress protection.
  • Ultra small, flat lead SOD523 (SC-79) Surface-Mounted Device (SMD) plastic package.

Applications

The RB751S-40FHTE61 Schottky barrier diode is versatile and can be used in various applications, including:

  • High-speed switching circuits.
  • Circuit protection and voltage clamping.
  • Line termination and reverse polarity protection.
  • Hand-held and portable devices where space is limited.
  • Automotive, industrial, power, computing, consumer, mobile, and wearable electronics.

Q & A

  1. What is the peak reverse voltage of the RB751S-40FHTE61?

    The peak reverse voltage (VRM) is 40 V.

  2. What is the typical forward voltage of the RB751S-40FHTE61?

    The typical forward voltage (VF) is 0.28 V at IF = 1.0 mA DC.

  3. What is the maximum forward continuous current for the RB751S-40FHTE61?

    The maximum forward continuous current (IF) is 30 mA.

  4. Is the RB751S-40FHTE61 RoHS compliant?

    Yes, the RB751S-40FHTE61 is RoHS compliant and lead-free.

  5. What is the package type of the RB751S-40FHTE61?

    The package type is SOD523 (SC-79), an ultra small, flat lead Surface-Mounted Device (SMD) plastic package.

  6. What are some typical applications of the RB751S-40FHTE61?

    Typical applications include high-speed switching circuits, circuit protection, voltage clamping, line termination, and reverse polarity protection in various industries such as automotive, industrial, and consumer electronics.

  7. What is the junction and storage temperature range for the RB751S-40FHTE61?

    The junction and storage temperature range is -55 to +150 °C.

  8. Does the RB751S-40FHTE61 have any integrated protection features?

    Yes, it has an integrated guard ring for stress protection.

  9. What is the total capacitance of the RB751S-40FHTE61?

    The total capacitance (CT) is typically 2.0 to 2.5 pF at VR = 1.0 V and f = 1.0 MHz.

  10. Is the RB751S-40FHTE61 suitable for high-speed switching applications?

    Yes, it is designed for extremely fast switching speeds, making it suitable for high-speed applications.

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
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