BC848BT116
  • Share:

Rohm Semiconductor BC848BT116

Manufacturer No:
BC848BT116
Manufacturer:
Rohm Semiconductor
Package:
Tape & Reel (TR)
Description:
TRANS NPN 30V 0.1A SST3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC848BT116 is a general-purpose NPN bipolar transistor manufactured by ROHM Semiconductor. It is designed for use in audio frequency small signal amplifiers and is packaged in the SOT-23 (TO-236AB) format. This transistor is suitable for a variety of applications requiring low to moderate current and voltage handling capabilities.

Key Specifications

Parameter Value
Package Code TO-236AB (SOT-23)
Number of Terminals 3
Polarity NPN
Collector Power Dissipation (PC) 0.2 W
Collector-Emitter Voltage (VCEO) 30 V
Collector Current (Ic) 0.1 A
Current Gain (hFE) 200 to 450
Mounting Style Surface Mount
Storage Temperature (Min.) -65°C
Storage Temperature (Max.) 150°C
Package Size 2.9x2.4 (t=1.2) mm

Key Features

The BC848BT116 features a collector-emitter voltage (VCEO) of 30V, making it suitable for applications requiring moderate voltage handling. It has a current gain (hFE) range of 200 to 450, ensuring reliable amplification. The transistor is designed for surface mount technology, facilitating easy integration into modern electronic designs. Additionally, it has a low power dissipation of 0.2W, which is beneficial for energy-efficient applications.

Applications

The BC848BT116 is primarily used in audio frequency small signal amplifier applications. It is also suitable for general-purpose amplification in various electronic circuits, including those in consumer electronics, automotive systems (with appropriate consultation), and industrial control systems.

Q & A

  1. What is the package type of the BC848BT116 transistor?

    The BC848BT116 is packaged in the SOT-23 (TO-236AB) format.

  2. What is the collector-emitter voltage (VCEO) of the BC848BT116?

    The collector-emitter voltage (VCEO) is 30V.

  3. What is the current gain (hFE) range of the BC848BT116?

    The current gain (hFE) range is from 200 to 450.

  4. What is the maximum collector current (Ic) of the BC848BT116?

    The maximum collector current (Ic) is 0.1 A.

  5. What is the power dissipation (PC) of the BC848BT116?

    The power dissipation (PC) is 0.2 W.

  6. What are the storage temperature limits for the BC848BT116?

    The storage temperature range is from -65°C to 150°C.

  7. Is the BC848BT116 suitable for automotive applications?

    For automotive usage, please contact the sales department.

  8. What is the typical use case for the BC848BT116 transistor?

    The BC848BT116 is typically used in audio frequency small signal amplifier applications.

  9. What is the mounting style of the BC848BT116?

    The BC848BT116 is designed for surface mount technology.

  10. What are the dimensions of the BC848BT116 package?

    The package dimensions are 2.9x2.4 (t=1.2) mm.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:350 mW
Frequency - Transition:200MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SST3
0 Remaining View Similar

In Stock

$0.08
11,125

Please send RFQ , we will respond immediately.

Same Series
BC848BT116
BC848BT116
TRANS NPN 30V 0.1A SST3

Similar Products

Part Number BC848BT116 BC848CT116
Manufacturer Rohm Semiconductor Rohm Semiconductor
Product Status Not For New Designs Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO) 15µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 350 mW 350 mW
Frequency - Transition 200MHz 200MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SST3 SST3

Related Product By Categories

BC817-25-7-F
BC817-25-7-F
Diodes Incorporated
TRANS NPN 45V 0.5A SOT23-3
BC817-25
BC817-25
Diotec Semiconductor
TRANS NPN 45V 0.8A SOT23-3
BCP56-10
BCP56-10
Diotec Semiconductor
TRANS NPN 80V 1A SOT223
BCP5316TA
BCP5316TA
Diodes Incorporated
TRANS PNP 80V 1A SOT223-3
2SC3648T-TD-E
2SC3648T-TD-E
onsemi
TRANS NPN 160V 0.7A PCP
NSV1C301ET4G-VF01
NSV1C301ET4G-VF01
onsemi
TRANS NPN 100V 3A DPAK
BC857B,235
BC857B,235
Nexperia USA Inc.
TRANS PNP 45V 0.1A TO236AB
BST52,135
BST52,135
Nexperia USA Inc.
TRANS NPN DARL 80V 1A SOT89
TIP122TU
TIP122TU
Fairchild Semiconductor
TRANS NPN DARL 100V 5A TO220-3
2N6045
2N6045
Solid State Inc.
TRANS NPN DARL 100V 8A TO220
BCP5610E6327HTSA1
BCP5610E6327HTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT223-4
BUK9Y11-30B/C1,115
BUK9Y11-30B/C1,115
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

BAV199HYT116
BAV199HYT116
Rohm Semiconductor
LOW-LEAKAGE, 80V, 215MA, SOT-23,
BAV99HMFHT116
BAV99HMFHT116
Rohm Semiconductor
DIODE ARRAY GP 80V 215MA SSD3
BAS40HYFHT116
BAS40HYFHT116
Rohm Semiconductor
40V, 120MA, SOT-23, SINGLE, SCHO
BAS16HMT116
BAS16HMT116
Rohm Semiconductor
BAS16HM IS HIGH RELIABILITY AND
BAS21HYFHT116
BAS21HYFHT116
Rohm Semiconductor
200V, 200MA, SOT-23, SINGLE, AUT
BZX84C9V1LYFHT116
BZX84C9V1LYFHT116
Rohm Semiconductor
250MW, 9.1V, SOT-23, AUTOMOTIVE
BZX84B16VLYFHT116
BZX84B16VLYFHT116
Rohm Semiconductor
250MW, 16V, SOT-23, AUTOMOTIVE Z
BZX84B8V2LYFHT116
BZX84B8V2LYFHT116
Rohm Semiconductor
250MW, 8.2V, SOT-23, AUTOMOTIVE
BZX84C3V9LT116
BZX84C3V9LT116
Rohm Semiconductor
DIODE ZENER 3.9V 250MW SSD3
BZX84B6V2LT116
BZX84B6V2LT116
Rohm Semiconductor
DIODE ZENER 6.2V 250MW SSD3
BCX17T116
BCX17T116
Rohm Semiconductor
TRANS PNP 45V 0.5A SST3
LM2901F-E2
LM2901F-E2
Rohm Semiconductor
GROUND SENSE COMPARATOR : LM2901