Overview
The BC847BU3HZGT106 is a bipolar junction transistor (BJT) manufactured by ROHM Semiconductor. This NPN transistor is designed for general-purpose amplification, particularly in audio frequency small signal amplifier applications. It is packaged in a SOT-323 (SC-70) surface mount package, making it suitable for a wide range of electronic circuits where space is limited.
Key Specifications
Parameter | Value |
---|---|
Package Code | SOT-323 (SC-70) |
Number of Terminals | 3 |
Polarity | NPN |
Collector Power Dissipation (PC) | 0.2 W |
Collector-Emitter Voltage (VCEO1) | 45 V |
Collector Current (Ic) | 0.1 A |
Current Gain (hFE) | 200 to 450 |
Mounting Style | Surface Mount |
Storage Temperature (Min.) | -55°C |
Storage Temperature (Max.) | 150°C |
Package Size | 2.0 x 2.1 mm (t=1.1 mm) |
Key Features
- High collector-emitter voltage (VCEO1) of 45 V, making it suitable for a variety of applications.
- Current gain (hFE) range of 200 to 450, providing reliable amplification.
- Low collector power dissipation of 0.2 W, which helps in managing thermal issues.
- Compact SOT-323 (SC-70) package, ideal for space-constrained designs.
- Wide storage temperature range from -55°C to 150°C, ensuring stability in various environmental conditions.
Applications
The BC847BU3HZGT106 is primarily used in audio frequency small signal amplifier circuits. It is also suitable for other general-purpose amplification applications, such as in consumer electronics, automotive systems (with proper consultation), and industrial control systems where reliable and efficient signal amplification is required.
Q & A
- What is the package type of the BC847BU3HZGT106 transistor?
The BC847BU3HZGT106 transistor is packaged in a SOT-323 (SC-70) surface mount package. - What is the collector-emitter voltage (VCEO1) of the BC847BU3HZGT106?
The collector-emitter voltage (VCEO1) of the BC847BU3HZGT106 is 45 V. - What is the current gain (hFE) range of the BC847BU3HZGT106?
The current gain (hFE) range of the BC847BU3HZGT106 is from 200 to 450. - What is the collector power dissipation (PC) of the BC847BU3HZGT106?
The collector power dissipation (PC) of the BC847BU3HZGT106 is 0.2 W. - What are the storage temperature limits for the BC847BU3HZGT106?
The storage temperature limits for the BC847BU3HZGT106 are from -55°C to 150°C. - What is the typical application of the BC847BU3HZGT106 transistor?
The BC847BU3HZGT106 transistor is typically used in audio frequency small signal amplifier circuits and other general-purpose amplification applications. - Is the BC847BU3HZGT106 suitable for automotive use?
For automotive usage, please contact the sales department of ROHM Semiconductor. - What is the package size of the BC847BU3HZGT106?
The package size of the BC847BU3HZGT106 is 2.0 x 2.1 mm (t=1.1 mm). - What is the collector current (Ic) of the BC847BU3HZGT106?
The collector current (Ic) of the BC847BU3HZGT106 is 0.1 A. - What is the mounting style of the BC847BU3HZGT106?
The mounting style of the BC847BU3HZGT106 is surface mount.