Overview
The FFSH30120ADN-F155 is a Silicon Carbide (SiC) Schottky Diode manufactured by ON Semiconductor, previously known as Fairchild Semiconductor. This diode utilizes advanced SiC technology to offer superior switching performance and higher reliability compared to traditional silicon diodes. It is designed to provide no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance, making it a next-generation power semiconductor device. The FFSH30120ADN-F155 is packaged in a TO-247-3L case and is RoHS compliant, Pb-free, and halogen-free/BFR-free.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Peak Repetitive Reverse Voltage (VRRM) | 1200 | V |
| Single Pulse Avalanche Energy (EAS) | 145 | mJ |
| Continuous Rectified Forward Current (IF) | 15* / 30** | A |
| Non-Repetitive Peak Forward Surge Current (IF, Max) | 1030 A (TC = 25°C, 10 μs) / 990 A (TC = 150°C, 10 μs) | A |
| Non-Repetitive Forward Surge Current (Half-Sine Pulse) | 125 A (tp = 8.3 ms) | A |
| Repetitive Forward Surge Current (Half-Sine Pulse) | 50 A (tp = 8.3 ms) | A |
| Power Dissipation (Ptot) | 195 W (TC = 25°C) / 32 W (TC = 150°C) | W |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to +175 | °C |
| Thermal Resistance, Junction to Case (RθJC) | 0.77* / 0.32** | °C/W |
| Forward Voltage (VF) @ IF = 15 A, TC = 25°C | 1.75 V | V |
| Reverse Current (IR) @ VR = 1200 V, TC = 25°C | 200 µA | µA |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Diode Configuration | 1 Pair Common Cathode |
Key Features
- Max Junction Temperature: 175°C
- Avalanche Rated: 145 mJ
- High Surge Current Capacity
- Positive Temperature Coefficient
- Ease of Paralleling
- No Reverse Recovery / No Forward Recovery
- Rapid Switching with No Reverse Recovery Current
- Temperature-Independent Switching Characteristics
- Excellent Thermal Performance
- Rohs Compliant, Pb-free, and Halogen-free/BFR-free
Applications
- General Purpose
- Switch Mode Power Supplies (SMPS)
- Solar Inverters
- Uninterruptible Power Supplies (UPS)
- Power Switching Circuits
Q & A
- What is the peak repetitive reverse voltage of the FFSH30120ADN-F155?
The peak repetitive reverse voltage (VRRM) is 1200 V. - What is the continuous rectified forward current rating of this diode?
The continuous rectified forward current (IF) is 15 A per leg and up to 30 A per device. - What are the key benefits of using Silicon Carbide (SiC) in this diode?
The key benefits include superior switching performance, higher reliability, no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. - What are the typical applications for the FFSH30120ADN-F155?
Typical applications include general purpose use, SMPS, solar inverters, UPS, and power switching circuits. - What is the operating temperature range for this diode?
The operating and storage temperature range is -55°C to +175°C. - Is the FFSH30120ADN-F155 RoHS compliant?
Yes, the FFSH30120ADN-F155 is RoHS compliant, Pb-free, and halogen-free/BFR-free. - What is the thermal resistance, junction to case, for this diode?
The thermal resistance, junction to case (RθJC), is 0.77°C/W per leg and 0.32°C/W per device. - What is the forward voltage drop at 15 A and 25°C?
The forward voltage drop (VF) at 15 A and 25°C is 1.75 V. - Can the FFSH30120ADN-F155 be used in high surge current applications?
Yes, the diode has a high surge current capacity, making it suitable for such applications. - Is the FFSH30120ADN-F155 suitable for use in life support systems or medical devices?
No, ON Semiconductor does not recommend using this diode in life support systems or medical devices.
