Overview
The RB751S40 is a Schottky barrier diode manufactured by Fairchild Semiconductor, now part of ON Semiconductor. This diode is designed for high-efficiency rectification and switching applications. It features a low forward voltage drop, fast switching times, and a very small surface-mount package, making it ideal for compact and high-performance electronic designs.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Maximum Repetitive Reverse Voltage | VRRM | 40 | V |
| Average Rectified Forward Current | IF(AV) | 30 | mA |
| Forward Surge Current (8.3 ms Single Half Sine-Wave) | IFSM | 200 | mA |
| Power Dissipation | PD | 227 | mW |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
| Forward Voltage Drop | VF | 370 | mV @ 1 mA |
| Reverse Leakage Current | IR | 0.5 | µA @ 30 V |
| Reverse Recovery Time | trr | 8.0 | nS |
| Junction Capacitance | Cj | 2.5 | pF @ 1 V, f = 1.0 MHz |
| Package | SC-79, SOD-523F |
Key Features
- Low Forward Voltage Drop: The RB751S40 has a low forward voltage drop of 370 mV at 1 mA, which enhances efficiency in rectification and switching applications.
- Fast Switching: This diode is characterized by fast switching times, making it suitable for high-frequency applications.
- Compact Package: The diode is packaged in an ultra-small, flat lead SOD523 (SC-79) surface-mount package, ideal for space-constrained designs.
- High Temperature Range: It operates over a wide temperature range from -55°C to +150°C, ensuring reliability in various environmental conditions.
- Low Reverse Leakage Current: The diode has a low reverse leakage current of 0.5 µA at 30 V, reducing power losses in standby conditions.
Applications
The RB751S40 Schottky barrier diode is suitable for a variety of applications, including:
- Power Supplies: Due to its low forward voltage drop and fast switching, it is ideal for use in power supply circuits.
- Switching Regulators: Its fast recovery time and low forward voltage make it a good choice for switching regulator applications.
- High-Frequency Circuits: The diode's fast switching capabilities make it suitable for high-frequency circuit designs.
- Portable Electronics: The compact package and low power consumption make it a good fit for portable electronic devices.
Q & A
- What is the maximum repetitive reverse voltage of the RB751S40?
The maximum repetitive reverse voltage (VRRM) is 40 V.
- What is the average rectified forward current of the RB751S40?
The average rectified forward current (IF(AV)) is 30 mA.
- What is the forward voltage drop of the RB751S40 at 1 mA?
The forward voltage drop (VF) at 1 mA is 370 mV.
- What is the package type of the RB751S40?
The package type is SC-79, SOD-523F.
- What is the operating temperature range of the RB751S40?
The operating temperature range is from -55°C to +150°C.
- What is the reverse recovery time of the RB751S40?
The reverse recovery time (trr) is 8.0 nS.
- What is the junction capacitance of the RB751S40 at 1 V and 1 MHz?
The junction capacitance (Cj) at 1 V and 1 MHz is 2.5 pF.
- Is the RB751S40 RoHS compliant?
There is no specific RoHS compliance information available for this part, but some variants may be compliant.
- What are some typical applications of the RB751S40?
Typical applications include power supplies, switching regulators, high-frequency circuits, and portable electronics.
- What is the thermal resistance, junction to ambient, of the RB751S40?
The thermal resistance, junction to ambient (RJA), is 550 °C/W.
