FFSH10120ADN-F155
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onsemi FFSH10120ADN-F155

Manufacturer No:
FFSH10120ADN-F155
Manufacturer:
onsemi
Package:
Bulk
Description:
SIC 1200V DIODE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FFSH10120ADN-F155 is a Silicon Carbide (SiC) Schottky Diode produced by onsemi. This diode utilizes advanced SiC technology, offering superior switching performance and higher reliability compared to traditional silicon diodes. It features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance, making it ideal for high-efficiency and high-frequency applications. The device is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

Parameter Value Unit
VRRM (Peak Repetitive Reverse Voltage) 1200 V
EAS (Single Pulse Avalanche Energy) 55 mJ
IF (Continuous Rectified Forward Current @ TC < 157°C) 5 / 10 A
IF, Max (Non-Repetitive Peak Forward Surge Current @ TC = 25°C, 10 μs) 380 A
IF,SM (Non-Repetitive Forward Surge Current, Half-Sine Pulse, tp = 8.3 ms) 42 A
Ptot (Power Dissipation @ TC = 25°C) 83 W
TJ (Max Junction Temperature) 175 °C
IR (Reverse Current @ VR = 1200 V, TC = 25°C) 200 μA
C (Total Capacitance @ VR = 1 V, f = 100 kHz) 337 pF

Key Features

  • Max Junction Temperature: 175°C
  • Avalanche Rated: 55 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • Ease of Paralleling
  • No Reverse Recovery/No Forward Recovery
  • Pb-free, Halogen Free/BFR Free and RoHS Compliant

Applications

  • General Purpose
  • SMPS (Switch-Mode Power Supplies)
  • Solar Inverters
  • UPS (Uninterruptible Power Supplies)
  • Power Switching Circuits

Q & A

  1. What is the peak repetitive reverse voltage of the FFSH10120ADN-F155?

    The peak repetitive reverse voltage (VRRM) is 1200 V.

  2. What is the maximum junction temperature for this diode?

    The maximum junction temperature (TJ) is 175°C.

  3. Does the FFSH10120ADN-F155 have reverse recovery current?

    No, this diode has no reverse recovery current.

  4. What is the continuous rectified forward current at TC < 157°C?

    The continuous rectified forward current is 5 A / 10 A.

  5. Is the FFSH10120ADN-F155 RoHS compliant?
  6. What are the typical applications of the FFSH10120ADN-F155?

    Typical applications include SMPS, solar inverters, UPS, and power switching circuits.

  7. What is the non-repetitive peak forward surge current at TC = 25°C, 10 μs?

    The non-repetitive peak forward surge current is 380 A.

  8. What is the total capacitance at VR = 1 V and f = 100 kHz?

    The total capacitance is 337 pF.

  9. What is the power dissipation at TC = 25°C?

    The power dissipation is 83 W.

  10. What is the reverse current at VR = 1200 V and TC = 25°C?

    The reverse current is 200 μA.

Product Attributes

Diode Configuration:- 
Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io) (per Diode):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Operating Temperature - Junction:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number FFSH10120ADN-F155 FFSH15120ADN-F155 FFSH40120ADN-F155 FFSH30120ADN-F155 FFSH20120ADN-F155 FFSH10120ADN_F155
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi
Product Status Active Active Active Active Active Active
Diode Configuration - 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type - Silicon Carbide Schottky Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) - 1.2 V 1.2 V 1200 V 1200 V 1200 V
Current - Average Rectified (Io) (per Diode) - 8A (DC) 20A 15A (DC) 10A (DC) 10A (DC)
Voltage - Forward (Vf) (Max) @ If - 1.75 V @ 8 A 1.75 V @ 20 A 1.75 V @ 15 A 1.75 V @ 10 A -
Speed - Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) No Recovery Time > 500mA (Io) Fast Recovery =< 500ns, > 200mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) - - - 0 ns - 0 ns
Current - Reverse Leakage @ Vr - 200 µA @ 1.2 V 200 µA @ 1.2 V 200 µA @ 1200 V 200 µA @ 1200 V -
Operating Temperature - Junction - -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C 175°C (Max)
Mounting Type - Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case - TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Supplier Device Package - TO-247-3 TO-247 Long Leads TO-247-3 TO-247-3 TO-247-3

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