FFSH20120ADN-F155
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onsemi FFSH20120ADN-F155

Manufacturer No:
FFSH20120ADN-F155
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE SIC 1200V 10A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FFSH20120ADN-F155 is a Silicon Carbide (SiC) Schottky Diode produced by onsemi. This diode is part of the EliteSiC family and is designed to provide superior switching performance and higher efficiency compared to traditional silicon diodes. It features a TO-247-3L package and is suitable for high-power applications requiring low losses and high reliability.

Key Specifications

ParameterValue
TechnologySilicon Carbide (SiC) Schottky
Voltage - DC Reverse (Vr) (Max)1200 V
Current - Average Rectified (Io) (per Diode)10 A (DC)
Forward Voltage Drop (Vf) at 10 A1.75 V
PackageTO-247-3L
Configuration1 pair of common cathodes

Key Features

  • High voltage rating of 1200 V, making it suitable for high-power applications.
  • Low forward voltage drop of 1.75 V at 10 A, reducing power losses.
  • High current handling capability of 10 A per diode.
  • TO-247-3L package for efficient heat dissipation and ease of mounting.
  • Superior switching performance due to SiC technology.
  • High reliability and durability.

Applications

The FFSH20120ADN-F155 SiC Schottky Diode is ideal for various high-power applications, including:

  • Power supplies and converters.
  • Motor drives and control systems.
  • Renewable energy systems such as solar and wind power.
  • Electric vehicle charging infrastructure.
  • High-frequency switching circuits.

Q & A

  1. What is the maximum DC reverse voltage of the FFSH20120ADN-F155?
    The maximum DC reverse voltage is 1200 V.
  2. What is the forward voltage drop at 10 A for this diode?
    The forward voltage drop at 10 A is 1.75 V.
  3. What is the current handling capability of the FFSH20120ADN-F155?
    The diode can handle an average rectified current of 10 A per diode.
  4. What package type is used for the FFSH20120ADN-F155?
    The diode is packaged in a TO-247-3L configuration.
  5. What are the key benefits of using SiC technology in this diode?
    SiC technology provides superior switching performance, lower power losses, and higher reliability compared to traditional silicon diodes.
  6. Is the FFSH20120ADN-F155 suitable for high-frequency switching applications?
    Yes, it is suitable due to its low forward voltage drop and high switching performance.
  7. What are some typical applications for the FFSH20120ADN-F155?
    Typical applications include power supplies, motor drives, renewable energy systems, electric vehicle charging, and high-frequency switching circuits.
  8. Does the FFSH20120ADN-F155 come in a RoHS-compliant version?
    Yes, the FFSH20120ADN-F155 is RoHS compliant.
  9. How many diodes are included in the FFSH20120ADN-F155 package?
    The package includes one pair of common cathodes.
  10. Where can I find detailed specifications and datasheets for the FFSH20120ADN-F155?
    Detailed specifications and datasheets can be found on the onsemi official website, as well as through distributors like Digi-Key and LCSC.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io) (per Diode):10A (DC)
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:200 µA @ 1200 V
Operating Temperature - Junction:-55°C ~ 175°C
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
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Similar Products

Part Number FFSH20120ADN-F155 FFSH40120ADN-F155 FFSH30120ADN-F155 FFSH10120ADN-F155
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor onsemi
Product Status Active Active Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode -
Diode Type Silicon Carbide Schottky Schottky Silicon Carbide Schottky -
Voltage - DC Reverse (Vr) (Max) 1200 V 1.2 V 1200 V -
Current - Average Rectified (Io) (per Diode) 10A (DC) 20A 15A (DC) -
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 10 A 1.75 V @ 20 A 1.75 V @ 15 A -
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) No Recovery Time > 500mA (Io) -
Reverse Recovery Time (trr) - - 0 ns -
Current - Reverse Leakage @ Vr 200 µA @ 1200 V 200 µA @ 1.2 V 200 µA @ 1200 V -
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -
Mounting Type Through Hole Through Hole Through Hole -
Package / Case TO-247-3 TO-247-3 TO-247-3 -
Supplier Device Package TO-247-3 TO-247 Long Leads TO-247-3 -

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