BDX33CP2
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Harris Corporation BDX33CP2

Manufacturer No:
BDX33CP2
Manufacturer:
Harris Corporation
Package:
Bulk
Description:
NPN EPITAXIAL SILICON TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BDX33CP2 is an NPN Epitaxial Silicon Transistor manufactured by Harris Corporation. This transistor is part of the bipolar junction transistor (BJT) family and is known for its reliability and performance in various electronic circuits. The BDX33CP2 is often used in applications requiring high current gain and robust collector-emitter breakdown voltage.

Key Specifications

ParameterValue
Voltage - Collector Emitter Breakdown (Max)100 V (similar models like BDX33C)
Current - Collector (Ic) (Max)10 A (similar models like BDX33C)
Vce Saturation (Max) @ Ib, Ic2.5 V @ 6 mA, 3 A (similar models like BDX33C)
DC Current Gain (hFE) (Min) @ Ic, Vce750 (similar models like BDX33C)
Operating TemperatureUp to 150°C (TJ) (similar models like BDX33C)
Transistor TypeNPN Epitaxial Silicon Transistor
Mounting TypeThrough Hole (similar models like BDX33C)

Key Features

  • NPN Epitaxial Silicon Transistor
  • High collector-emitter breakdown voltage
  • High DC current gain
  • Robust Vce saturation voltage
  • Suitable for high-current applications
  • Through-hole mounting type for easy integration into various circuits

Applications

  • Inverter circuits
  • Interface circuits
  • Driver circuits
  • Muting circuits
  • General-purpose amplification and switching applications

Q & A

  1. What is the BDX33CP2 transistor type?
    The BDX33CP2 is an NPN Epitaxial Silicon Transistor.
  2. What is the maximum collector-emitter breakdown voltage of the BDX33CP2?
    The maximum collector-emitter breakdown voltage is typically around 100 V, similar to models like BDX33C.
  3. What is the maximum current handling capacity of the BDX33CP2?
    The transistor can handle a maximum collector current of 10 A, similar to models like BDX33C.
  4. What is the DC current gain (hFE) of the BDX33CP2?
    The DC current gain (hFE) is typically around 750, similar to models like BDX33C.
  5. What are the common applications of the BDX33CP2?
    Common applications include inverter circuits, interface circuits, driver circuits, and muting circuits.
  6. What is the operating temperature range of the BDX33CP2?
    The operating temperature range is up to 150°C (TJ), similar to models like BDX33C.
  7. How is the BDX33CP2 typically mounted?
    The transistor is typically mounted through-hole.
  8. Is the BDX33CP2 RoHS compliant?
    While specific compliance details for BDX33CP2 are not provided, similar models are often RoHS compliant.
  9. Where can I find the datasheet for the BDX33CP2?
    You can find the datasheet on the manufacturer's website or through electronic component distributors.
  10. How do I purchase the BDX33CP2?
    You can purchase the BDX33CP2 from electronic component distributors such as VESS Electronics or JAKE Electronics.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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In Stock

$0.53
1,428

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