MMBT2222A_R1_00001
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Panjit International Inc. MMBT2222A_R1_00001

Manufacturer No:
MMBT2222A_R1_00001
Manufacturer:
Panjit International Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.6A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT2222A, produced by Panjit International Inc., is the SMD (SOT-23) version of the popular 2N2222A transistor. This NPN bipolar junction transistor is widely used in electronic design due to its excellent performance in amplifier and fast-switching circuits. It is particularly suited for applications where space is a constraint, making it ideal for low power switching devices and other compact electronic systems.

Key Specifications

Parameter Value Unit
Collector-Emitter Voltage (Vce) 40 V
Collector-Base Voltage (Vcb) 75 V
Emitter-Base Voltage (Veb) 6 V
Continuous Collector Current (Ic) 600 mA
DC Current Gain (hFE) 100 to 300
Total Power Dissipation 350 mW
Rise Time (tr) 25 ns
Fall Time (tf) 60 ns
Transition Frequency (fT) 300 MHz
Package Type SOT-23

Key Features

  • Bi-Polar small signal NPN Transistor
  • Epitaxial Planar Die Construction
  • Low Saturation Voltage VCE(sat) < 300mV @ 150mA
  • Complementary PNP Type: MMBT2907A
  • Ideal for Low Power Amplification and Switching
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen- and Antimony-Free. “Green” Device
  • AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities for automotive applications

Applications

  • Driver Modules like Relay Driver, LED driver, etc.
  • Switching loads up to 600mA
  • Motor speed control
  • Inverter and Rectifier circuits
  • Darlington Pair Designs
  • Amplifier circuits, especially for audio signals
  • Fast-switching applications in digital logic circuits

Q & A

  1. What is the MMBT2222A transistor?

    The MMBT2222A is an NPN bipolar junction transistor in an SOT-23 package, commonly used in low power switching and amplification applications.

  2. What are the key specifications of the MMBT2222A transistor?

    Key specifications include a Collector-Emitter Voltage of 40V, Collector-Base Voltage of 75V, Emitter-Base Voltage of 6V, and a Continuous Collector Current of 600mA.

  3. What is the package type of the MMBT2222A transistor?

    The MMBT2222A transistor is packaged in an SOT-23 plastic package.

  4. What are the typical applications of the MMBT2222A transistor?

    Typical applications include driver modules, switching loads, motor speed control, inverter and rectifier circuits, and amplifier circuits.

  5. How does the MMBT2222A differ from the 2N2222A transistor?

    The MMBT2222A and 2N2222A have similar specifications but differ in packaging; the MMBT2222A is in an SOT-23 package, while the 2N2222A is in a TO-18 metal can package.

  6. What is the complementary PNP transistor for the MMBT2222A?

    The complementary PNP transistor for the MMBT2222A is the MMBT2907A.

  7. What is the maximum power dissipation of the MMBT2222A transistor?

    The maximum power dissipation of the MMBT2222A transistor is 350mW.

  8. Is the MMBT2222A transistor RoHS compliant?

    Yes, the MMBT2222A transistor is totally lead-free and fully RoHS compliant.

  9. What is the transition frequency (fT) of the MMBT2222A transistor?

    The transition frequency (fT) of the MMBT2222A transistor is 300 MHz.

  10. How can you identify a faulty MMBT2222A transistor?

    A faulty MMBT2222A transistor can be identified by measuring its base-emitter and base-collector junctions with a multimeter.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
Current - Collector Cutoff (Max):10nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:225 mW
Frequency - Transition:- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
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Similar Products

Part Number MMBT2222A_R1_00001 MMBT2222AW_R1_00001
Manufacturer Panjit International Inc. Panjit International Inc.
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 100 @ 150mA, 10V
Power - Max 225 mW 150 mW
Frequency - Transition - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323
Supplier Device Package SOT-23 SOT-323

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