Overview
The BCX56-16-AU_R1_000A1 is a medium power NPN transistor manufactured by Panjit International Inc. This transistor is designed for a wide range of applications requiring high collector current and low collector-emitter saturation voltage. It is packaged in a SOT-89 (SC-62) surface-mounted device (SMD) plastic package, making it suitable for various electronic circuits.
Key Specifications
Parameter | Symbol | Limit | Units |
---|---|---|---|
Collector-Base Voltage | VCBO | 120 | V |
Collector-Emitter Voltage | VCEO | 100 | V |
Emitter-Base Voltage | VEBO | 6 | V |
Collector Current (DC) | IC | 1 | A |
Collector Current (Pulse) | ICP | 3 | A |
Power Dissipation | PD | 1.4 | W |
Junction Temperature | TJ | 150 | °C |
Operating Junction and Storage Temperature Range | TJ, TSTG | -55 to 150 | °C |
Thermal Resistance from Junction to Ambient | RθJA | 89 | °C/W |
Collector-Emitter Saturation Voltage | VCE(SAT) | 0.35 V (max) @ Ic/Ib = 500mA / 50mA | V |
DC Current Gain | hFE | 100 - 250 @ VCE = 2V, IC = 150mA |
Key Features
- Silicon NPN epitaxial type transistor
- Low collector-emitter saturation voltage (Vce(sat)) of 0.35V(max) @ Ic/Ib = 500mA / 50mA
- High collector current capability up to 1A
- Excellent DC current gain characteristics
- AEC-Q101 qualified for automotive applications
- Lead-free and compliant with EU RoHS 2.0
- Green molding compound as per IEC61249 Standard
- SOT-89 package with solderable terminals per MIL-STD-750, Method 2026
Applications
The BCX56-16-AU_R1_000A1 transistor is suitable for a variety of applications, including:
- Automotive systems due to its AEC-Q101 qualification
- Power amplifiers and switching circuits
- General-purpose amplification and switching in electronic devices
- Industrial control systems
- Consumer electronics requiring medium power handling
Q & A
- What is the maximum collector-emitter voltage of the BCX56-16-AU_R1_000A1 transistor?
The maximum collector-emitter voltage (VCEO) is 100V.
- What is the collector current capability of this transistor?
The transistor can handle a DC collector current (IC) of up to 1A and a pulse collector current (ICP) of up to 3A.
- What is the thermal resistance from junction to ambient for this transistor?
The thermal resistance from junction to ambient (RθJA) is 89°C/W.
- Is the BCX56-16-AU_R1_000A1 transistor AEC-Q101 qualified?
Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.
- What is the package type of the BCX56-16-AU_R1_000A1 transistor?
The transistor is packaged in a SOT-89 (SC-62) surface-mounted device (SMD) plastic package.
- What are the key features of the BCX56-16-AU_R1_000A1 transistor?
Key features include low Vce(sat), high collector current capability, excellent DC current gain characteristics, and compliance with EU RoHS 2.0 and IEC61249 Standard.
- What is the maximum junction temperature for this transistor?
The maximum junction temperature (TJ) is 150°C.
- What is the typical DC current gain (hFE) of the BCX56-16-AU_R1_000A1 transistor?
The typical DC current gain (hFE) is between 100 and 250 at VCE = 2V and IC = 150mA.
- Is the BCX56-16-AU_R1_000A1 transistor lead-free?
Yes, it is lead-free and compliant with EU RoHS 2.0.
- What are some common applications for the BCX56-16-AU_R1_000A1 transistor?
Common applications include automotive systems, power amplifiers, switching circuits, general-purpose amplification, and industrial control systems.