US1BFA
  • Share:

onsemi US1BFA

Manufacturer No:
US1BFA
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 100V 1A SOD123FA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The US1BFA is a high-performance surface mount rectifier diode produced by onsemi. This diode is part of the US1AFA-US1MFA series and is known for its fast switching capabilities and high efficiency. It features a glass passivated chip junction, which enhances its reliability and performance. The US1BFA is designed to handle high surge capacities and is suitable for a wide range of applications requiring low power loss and fast recovery times.

Key Specifications

ParameterValueUnit
VRRM (Repetitive Peak Reverse Voltage)100V
VRMS (RMS Reverse Voltage)70V
VDC (DC Blocking Voltage)100V
IF(AV) (Average Forward Rectified Current)1A
IFSM (Peak Forward Surge Current)30A
TJ (Operating Junction Temperature Range)−55 to +150°C
TSTG (Storage Temperature Range)−55 to +150°C
VF (Maximum Instantaneous Forward Voltage)1.30V
IR (Maximum Reverse Current at Rated VR)5 μA (TJ = 25°C), 150 μA (TJ = 125°C)
Trr (Maximum Reverse Recovery Time)50~75 ns

Key Features

  • Glass Passivated Chip Junction: Enhances reliability and performance.
  • Low Power Loss, High Efficiency: Ideal for applications requiring minimal energy loss.
  • Fast Switching: Reverse recovery time of 50~75 ns.
  • High Surge Capacity: Can handle high surge currents.
  • UL Flammability 94V-0 Classification: Meets safety standards for flammability.
  • MSL 1 per J-STD-020: Compliant with moisture sensitivity level standards.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other critical applications.
  • Pb-Free, Halogen Free, and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.

Applications

The US1BFA diode is versatile and can be used in various applications, including:

  • Automotive Systems: Due to its AEC-Q101 qualification, it is suitable for automotive applications requiring high reliability.
  • Power Supplies: Its high efficiency and low power loss make it ideal for power supply circuits.
  • Industrial Control Systems: Can be used in industrial control systems where fast switching and high surge capacity are necessary.
  • Consumer Electronics: Suitable for use in consumer electronics where reliability and efficiency are critical.

Q & A

  1. What is the repetitive peak reverse voltage of the US1BFA diode?
    The repetitive peak reverse voltage (VRRM) of the US1BFA diode is 100 V.
  2. What is the average forward rectified current of the US1BFA diode?
    The average forward rectified current (IF(AV)) of the US1BFA diode is 1 A.
  3. What is the maximum reverse recovery time of the US1BFA diode?
    The maximum reverse recovery time (Trr) of the US1BFA diode is 50~75 ns.
  4. Is the US1BFA diode RoHS compliant?
    Yes, the US1BFA diode is Pb-Free, Halogen Free, and RoHS compliant.
  5. What is the operating junction temperature range of the US1BFA diode?
    The operating junction temperature range (TJ) of the US1BFA diode is −55 to +150 °C.
  6. What is the maximum instantaneous forward voltage of the US1BFA diode?
    The maximum instantaneous forward voltage (VF) of the US1BFA diode is 1.30 V.
  7. Is the US1BFA diode suitable for automotive applications?
    Yes, the US1BFA diode is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other critical applications.
  8. What is the package type of the US1BFA diode?
    The US1BFA diode comes in a SOD-123FL package.
  9. Does the US1BFA diode meet UL flammability standards?
    Yes, the US1BFA diode meets UL flammability 94V-0 classification standards.
  10. What is the storage temperature range of the US1BFA diode?
    The storage temperature range (TSTG) of the US1BFA diode is −55 to +150 °C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:950 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:5 µA @ 100 V
Capacitance @ Vr, F:20pF @ 4V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123W
Supplier Device Package:SOD-123FA
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.52
1,049

Please send RFQ , we will respond immediately.

Same Series
US1FFA
US1FFA
DIODE GEN PURP 300V 1A SOD123FA
US1KFA
US1KFA
DIODE GEN PURP 800V 1A SOD123FA
US1AFA
US1AFA
DIODE GEN PURP 50V 1A SOD123FA
US1BFA
US1BFA
DIODE GEN PURP 100V 1A SOD123FA
US1GFA
US1GFA
DIODE GEN PURP 400V 1A SOD123FA
US1JFA
US1JFA
DIODE GEN PURP 600V 1A SOD123FA
US1DFA
US1DFA
DIODE GEN PURP 200V 1A SOD123FA

Similar Products

Part Number US1BFA US1FFA US1KFA US1GFA US1JFA US1DFA US1AFA
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 300 V 800 V 400 V 600 V 200 V 50 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 1 A 950 mV @ 1 A 1.7 V @ 1 A 1.3 V @ 1 A 1.7 V @ 1 A 950 mV @ 1 A 950 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 75 ns 50 ns 75 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 100 V 5 µA @ 300 V 5 µA @ 800 V 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 200 V 5 µA @ 50 V
Capacitance @ Vr, F 20pF @ 4V, 1MHz 20pF @ 4V, 1MHz 15pF @ 4V, 1MHz 20pF @ 4V, 1MHz 15pF @ 4V, 1MHz 20pF @ 4V, 1MHz 20pF @ 4V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-123W SOD-123W SOD-123W SOD-123F SOD-123W SOD-123W SOD-123W
Supplier Device Package SOD-123FA SOD-123FA SOD-123FA SOD-123FL SOD-123FA SOD-123FA SOD-123FA
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
STPS2150A
STPS2150A
STMicroelectronics
DIODE SCHOTTKY 150V 2A SMA
BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
PMEG2005AESFC315
PMEG2005AESFC315
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
PMEG3020EP,115
PMEG3020EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 2A CFP5
STTH3002G-TR
STTH3002G-TR
STMicroelectronics
DIODE GEN PURP 200V 30A D2PAK
BAT54W-E3-18
BAT54W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
MBRS130
MBRS130
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 1A, 30V
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
BAS16_L99Z
BAS16_L99Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
MUR4100E
MUR4100E
onsemi
DIODE GEN PURP 1KV 4A DO201AD
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35

Related Product By Brand

BD682T
BD682T
onsemi
TRANS PNP DARL 100V 4A TO126
MJD44H11TF
MJD44H11TF
onsemi
TRANS NPN 80V 8A DPAK
DTC114TM3T5G
DTC114TM3T5G
onsemi
TRANS PREBIAS NPN 50V SOT723
FDG6332C
FDG6332C
onsemi
MOSFET N/P-CH 20V SC70-6
2SK4177-DL-1E
2SK4177-DL-1E
onsemi
MOSFET N-CH 1500V 2A TO263-2
NB3N502DR2G
NB3N502DR2G
onsemi
IC MULTIPLIER CLOCK PLL 8-SOIC
NCS2325DR2G
NCS2325DR2G
onsemi
IC OPAMP ZER-DRIFT 2CIRC 8SOIC
STK672-432AN-E
STK672-432AN-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
LB11660FV-TLM-H
LB11660FV-TLM-H
onsemi
IC MOTOR DRIVER 4V-15V 16SSOP
NCP1593AMNTWG
NCP1593AMNTWG
onsemi
IC REG BUCK ADJUSTABLE 3A 10DFN
NCP103AMX180TCG
NCP103AMX180TCG
onsemi
IC REG LINEAR 1.8V 150MA 4UDFN
MC33375D-3.0
MC33375D-3.0
onsemi
IC REG LINEAR 3V 300MA 8SOIC