Overview
The SZESD7361XV2T1G is an ESD (Electrostatic Discharge) protection diode manufactured by onsemi. This device is specifically designed to protect high-speed data lines from ESD events, ensuring the integrity and reliability of sensitive electronic circuits. With its ultra-low capacitance, it is an ideal solution for applications requiring minimal signal distortion and high-speed data transmission.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Operating Junction Temperature Range | TJ | −55 to +125 | °C |
Storage Temperature Range | Tstg | −55 to +150 | °C |
Lead Solder Temperature (10 Seconds) | TL | 260 | °C |
Reverse Working Voltage | VRWM | 5 to 16 | V |
Breakdown Voltage | VBR | 16.5 | V |
Reverse Leakage Current | IR | < 1 nA (at VRWM = 5 V), < 20 nA (at VRWM = 15 V) | nA |
Clamping Voltage | VC | 31 V (at IPP = 8 A), 34 V (at IPP = 16 A) | V |
Junction Capacitance | CJ | 0.55 pF (at VR = 0 V, f = 1 MHz) | pF |
ESD Protection | ESD | ±15 kV (Contact), ±15 kV (Air), ISO 10605: 330 pF/2 kΩ ±15 kV (Contact) | kV |
Key Features
- Ultra-low capacitance (0.55 pF max, I/O to GND) for minimal signal distortion.
- Compliance with IEC standards: IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and IEC61000-4-5 (Lightning).
- ISO 10605 (ESD) 330 pF/2 kΩ ±15 kV Contact protection.
- SZ prefix indicates AEC-Q101 qualification and PPAP capability for automotive and other critical applications.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
Applications
- Wireless chargers.
- Near Field Communications (NFC) devices.
Q & A
- What is the primary function of the SZESD7361XV2T1G?
The primary function of the SZESD7361XV2T1G is to protect high-speed data lines from electrostatic discharge (ESD) events.
- What are the key ESD protection standards that the SZESD7361XV2T1G complies with?
The device complies with IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and IEC61000-4-5 (Lightning) standards, as well as ISO 10605 (ESD) 330 pF/2 kΩ ±15 kV Contact.
- What is the maximum junction temperature range for the SZESD7361XV2T1G?
The operating junction temperature range is −55°C to +125°C.
- What is the typical junction capacitance of the SZESD7361XV2T1G?
The typical junction capacitance is 0.55 pF at VR = 0 V and f = 1 MHz.
- Is the SZESD7361XV2T1G suitable for automotive applications?
- What are the typical applications for the SZESD7361XV2T1G?
The device is typically used in wireless chargers and Near Field Communications (NFC) devices.
- Is the SZESD7361XV2T1G RoHS compliant?
- What is the maximum reverse working voltage for the SZESD7361XV2T1G?
The maximum reverse working voltage (VRWM) is 16 V.
- What is the clamping voltage of the SZESD7361XV2T1G during an ESD event?
The clamping voltage is 31 V at IPP = 8 A and 34 V at IPP = 16 A.
- How is the ESD clamping voltage tested for the SZESD7361XV2T1G?
The ESD clamping voltage is tested using the Transmission Line Pulse (TLP) method and the IEC61000-4-2 waveform.