Overview
The MA3075WALT1G is a dual monolithic silicon zener diode designed by onsemi for applications requiring transient overvoltage protection. This component is particularly useful in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, and medical equipment. The MA3075WALT1G features a dual junction common anode design, allowing it to protect two separate lines using a single package, which is ideal for situations where board space is limited.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Breakdown Voltage | VZ | 7.2 - 7.9 V @ 5 mA | V |
| Forward Voltage | VF | 0.8 - 0.9 V @ 10 mA | V |
| Peak Power Dissipation @ 100 μs | Ppk | 15 W | W |
| Steady State Power Dissipation Derate above 25°C | °PD° | 225 mW/°C | mW/°C |
| Thermal Resistance, Junction-to-Ambient | RJA | 556 °C/W | °C/W |
| Maximum Junction Temperature | TJ | 150 °C | °C |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 °C | °C |
| ESD Protection (Human Body Model) | VPP | 16 kV | kV |
| ESD Protection (Air and Contact Discharge) | VPP | 30 kV | kV |
| Diode Capacitance | Cd | 80 pF @ 0 V, 1 MHz | pF |
| Package | SOT-23-3 |
Key Features
- SOT-23 package allowing two separate unidirectional configurations
- Low leakage current: < 1 μA @ 5.0 V
- Low capacitance: 80 pF typical @ 0 V, 1 MHz
- ESD protection meeting 16 kV Human Body Model and 30 kV Air and Contact Discharge
- SZ prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable
- Pb-free, halogen-free/BFR-free, and RoHS compliant
- Void-free, transfer-molded, thermosetting plastic case with corrosion-resistant finish
- Designed for optimal automated board assembly and high-density applications
Applications
The MA3075WALT1G is suitable for a variety of applications requiring transient overvoltage protection, including:
- Computers and peripherals
- Printers and business machines
- Communication systems
- Medical equipment
- Automotive systems (with SZ prefix)
Q & A
- What is the primary function of the MA3075WALT1G?
The MA3075WALT1G is designed for transient overvoltage protection in ESD sensitive equipment.
- What is the breakdown voltage range of the MA3075WALT1G?
The breakdown voltage range is 7.2 - 7.9 V at 5 mA.
- What is the peak power dissipation of the MA3075WALT1G?
The peak power dissipation is 15 W at 100 μs.
- What type of package does the MA3075WALT1G use?
The MA3075WALT1G uses an SOT-23-3 package.
- Is the MA3075WALT1G RoHS compliant?
- What are the ESD protection capabilities of the MA3075WALT1G?
The MA3075WALT1G provides ESD protection meeting 16 kV Human Body Model and 30 kV Air and Contact Discharge.
- What is the typical diode capacitance of the MA3075WALT1G?
The typical diode capacitance is 80 pF at 0 V, 1 MHz.
- Is the MA3075WALT1G suitable for automotive applications?
- What is the operating junction temperature range of the MA3075WALT1G?
The operating junction temperature range is -55 to +150 °C.
- Is the MA3075WALT1G designed for automated board assembly?
