Overview
The SZESD7016MUTAG is an ESD protection diode designed by onsemi to provide robust protection for high-speed data lines, particularly in USB 3.0 interfaces. This device integrates protection for the D+, D−, and Vbus lines into a single package, making it an ideal solution for voltage-sensitive high-speed applications. The ultra-low capacitance and low ESD clamping voltage of the SZESD7016MUTAG ensure minimal impact on signal integrity while offering comprehensive ESD protection.
Key Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Reverse Working Voltage | VRWM | I/O Pin to GND | 5.0 | V | ||
| Breakdown Voltage | VBR | IT = 1 mA, I/O Pin to GND | 5.5 | V | ||
| Reverse Leakage Current | IR | VRWM = 5 V, I/O Pin to GND | 1.0 | μA | ||
| Clamping Voltage | VC | IPP = 1 A, I/O Pin to GND (8 x 20 μs pulse) | 10 | V | ||
| Junction Capacitance | CJ | VR = 0 V, f = 1 MHz between I/O Pins and GND | 0.15 | 0.20 | pF | |
| Operating Junction Temperature Range | TJ | -55 | 125 | °C | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Lead Solder Temperature - Maximum (10 Seconds) | TL | 260 | °C | |||
| IEC 61000-4-2 Contact (ESD) | ESD | ±15 | kV |
Key Features
- Low Capacitance: 0.15 pF typical (I/O to GND)
- Protection for IEC 61000-4-2 (Level 4) standards
- Low ESD Clamping Voltage
- SZ Prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable
- Pb-Free device
- Flow-through style package for easy PCB layout and matched trace lengths
Applications
- USB 3.0 interfaces
- High-speed data lines requiring ESD protection
- Automotive and industrial applications where robust ESD protection is necessary
Q & A
- What is the primary function of the SZESD7016MUTAG? The primary function is to provide ESD protection for high-speed data lines, particularly in USB 3.0 interfaces.
- What are the key specifications of the SZESD7016MUTAG? Key specifications include a reverse working voltage of 5.0 V, breakdown voltage of 5.5 V, and junction capacitance of 0.15 pF.
- What standards does the SZESD7016MUTAG comply with for ESD protection? It complies with IEC 61000-4-2 (Level 4) standards.
- What is the typical clamping voltage of the SZESD7016MUTAG? The typical clamping voltage is 10 V for an 8 x 20 μs pulse.
- Is the SZESD7016MUTAG suitable for automotive applications? Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- What is the package type of the SZESD7016MUTAG? It is packaged in a UDFN-8 (1x3.3) Pb-Free package.
- What is the operating junction temperature range of the SZESD7016MUTAG? The operating junction temperature range is -55°C to 125°C.
- How does the flow-through style package benefit PCB design? The flow-through style package allows for easy PCB layout and matched trace lengths, which is necessary to maintain consistent impedance between high-speed differential lines.
- Is the SZESD7016MUTAG RoHS compliant? Yes, the device is RoHS compliant.
- What is the storage temperature range for the SZESD7016MUTAG? The storage temperature range is -55°C to 150°C.
