Overview
The SMMBTA56WT1G is a PNP silicon driver transistor manufactured by onsemi. This transistor is part of the MMBTA56W series and is designed for a wide range of applications requiring high reliability and performance. It is packaged in a SC-70 (SOT-323) case, which is Pb-Free, Halogen Free/BFR Free, and RoHS compliant. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -80 | Vdc |
| Collector-Base Voltage | VCBO | -80 | Vdc |
| Emitter-Base Voltage | VEBO | -4.0 | Vdc |
| Collector Current - Continuous | IC | -500 | mAdc |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 460 | mW |
| Thermal Resistance, Junction to Ambient | RJA | 272 | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
| Collector-Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0) | V(BR)CEO | -80 | Vdc |
| Emitter-Base Breakdown Voltage (IE = -100 μAdc, IC = 0) | V(BR)EBO | -4.0 | Vdc |
| DC Current Gain (IC = -10 mAdc, VCE = -1.0 Vdc) | hFE | 100 | |
| Collector-Emitter Saturation Voltage (IC = -100 mAdc, IB = -10 mAdc) | VCE(sat) | -0.25 | Vdc |
| Base-Emitter On Voltage (IC = -100 mAdc, VCE = -1.0 Vdc) | VBE(on) | -1.2 | Vdc |
| Current-Gain - Bandwidth Product (IC = -100 mAdc, VCE = -1.0 Vdc, f = 100 MHz) | fT | 50 | MHz |
Key Features
- Moisture Sensitivity Level: 1
- ESD Rating: Human Body Model - 4 kV, Machine Model - 400 V
- AEC-Q101 qualified and PPAP capable for automotive and other demanding applications
- Pb-Free, Halogen Free/BFR Free, and RoHS compliant
- High collector-emitter voltage and current ratings
- Low collector-emitter saturation voltage and base-emitter on voltage
- High current-gain - bandwidth product
Applications
The SMMBTA56WT1G transistor is suitable for a variety of applications, including:
- Automotive systems requiring high reliability and performance
- General-purpose switching and amplification
- Driver circuits for relays, solenoids, and other inductive loads
- Audio and signal processing circuits
- Industrial control and automation systems
Q & A
- What is the maximum collector-emitter voltage of the SMMBTA56WT1G transistor?
The maximum collector-emitter voltage (VCEO) is -80 Vdc.
- What is the continuous collector current rating of this transistor?
The continuous collector current (IC) is -500 mAdc.
- Is the SMMBTA56WT1G transistor RoHS compliant?
Yes, the transistor is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
- What is the thermal resistance, junction to ambient, for this transistor?
The thermal resistance, junction to ambient (RJA), is 272 °C/W.
- What is the current-gain - bandwidth product of the SMMBTA56WT1G transistor?
The current-gain - bandwidth product (fT) is 50 MHz.
- Is the SMMBTA56WT1G transistor suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- What is the package type of the SMMBTA56WT1G transistor?
The transistor is packaged in a SC-70 (SOT-323) case.
- What are the typical applications of the SMMBTA56WT1G transistor?
It is used in automotive systems, general-purpose switching and amplification, driver circuits, audio and signal processing, and industrial control systems.
- What is the ESD rating of the SMMBTA56WT1G transistor?
The ESD rating is 4 kV for the Human Body Model and 400 V for the Machine Model.
- What is the base-emitter on voltage of the SMMBTA56WT1G transistor?
The base-emitter on voltage (VBE(on)) is -1.2 Vdc.
