Overview
The MMBTA56WT1G is a PNP bipolar junction transistor (BJT) manufactured by onsemi. This transistor is part of the MMBTA56 series and is designed for general-purpose amplifier and switching applications. It is known for its high collector-emitter voltage and current handling capabilities, making it suitable for a variety of electronic circuits.
The device is packaged in a SOT-323 (SC70) case, which is compact and suitable for surface-mount technology (SMT) assembly. It is also Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and compliance with regulatory standards.
Key Specifications
| Characteristic | Value | Unit |
|---|---|---|
| Transistor Polarity | PNP | |
| Configuration | Single | |
| Maximum DC Collector Current | 500 | mA |
| Collector-Emitter Voltage (VCEO) Max | 80 | V |
| Collector-Base Voltage (VCBO) Max | 80 | V |
| Emitter-Base Voltage (VEBO) Max | 4.0 | V |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | 225 | mW |
| Thermal Resistance, Junction-to-Ambient | 556 | °C/W |
| Junction and Storage Temperature | -55 to +150 | °C |
| DC Current Gain (hFE) at IC = -100 mA, VCE = -1.0 V | 100 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) at IC = -100 mA, IB = -10 mA | 0.25 | V |
| Base-Emitter On Voltage (VBE(on)) at IC = -100 mA, VCE = -1.0 V | 1.2 | V |
Key Features
- Pb-free, Halogen-free, and RoHS Compliant: Ensures environmental sustainability and regulatory compliance.
- High Collector-Emitter Voltage (VCEO): Up to 80 V, making it suitable for high-voltage applications.
- High Collector Current: Up to 500 mA, suitable for driving moderate to high current loads.
- Low Collector-Emitter Saturation Voltage (VCE(sat)): Typically 0.25 V, reducing power losses in switching applications.
- Compact SOT-323 Package: Suitable for surface-mount technology and space-constrained designs.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
Applications
- General-Purpose Amplifiers: Suitable for various amplifier circuits due to its high current gain and low saturation voltage.
- Switching Circuits: Ideal for switching applications where high collector-emitter voltage and current are required.
- Automotive Electronics: AEC-Q101 qualified, making it suitable for automotive and other high-reliability applications.
- Consumer Electronics: Can be used in a variety of consumer electronic devices requiring reliable and efficient transistor performance.
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the MMBTA56WT1G transistor?
The maximum collector-emitter voltage (VCEO) is 80 V.
- What is the maximum continuous collector current (IC) of the MMBTA56WT1G transistor?
The maximum continuous collector current (IC) is 500 mA.
- What package type is the MMBTA56WT1G transistor available in?
The transistor is available in a SOT-323 (SC70) package.
- Is the MMBTA56WT1G transistor RoHS compliant?
Yes, the transistor is Pb-free, halogen-free, and RoHS compliant.
- What is the typical collector-emitter saturation voltage (VCE(sat)) of the MMBTA56WT1G transistor?
The typical collector-emitter saturation voltage (VCE(sat)) is 0.25 V.
- What is the DC current gain (hFE) of the MMBTA56WT1G transistor at IC = -100 mA and VCE = -1.0 V?
The DC current gain (hFE) is typically 100.
- Is the MMBTA56WT1G transistor suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other high-reliability applications.
- What is the junction and storage temperature range for the MMBTA56WT1G transistor?
The junction and storage temperature range is -55°C to +150°C.
- What is the thermal resistance, junction-to-ambient (RJA) for the MMBTA56WT1G transistor on an FR-5 board?
The thermal resistance, junction-to-ambient (RJA) is 556 °C/W.
- What is the base-emitter on voltage (VBE(on)) of the MMBTA56WT1G transistor at IC = -100 mA and VCE = -1.0 V?
The base-emitter on voltage (VBE(on)) is typically 1.2 V.
