Overview
The SBAW56WT1G is a dual switching diode with a common anode configuration, manufactured by onsemi. This device is designed to meet the stringent requirements of automotive and other applications that demand unique site and control change requirements. It is AEC-Q101 qualified and PPAP capable, ensuring high reliability and performance. The diode is also Pb-free, halogen-free/BFR-free, and RoHS compliant, making it environmentally friendly.
Key Specifications
Characteristic | Symbol | Max Unit |
---|---|---|
Reverse Voltage | VR | 70 V |
Forward Current | IF | 200 mA |
Peak Forward Surge Current | IFM(surge) | 500 mA |
Forward Surge Max Current (Single Square Wave) | IFSM | 4 A (1 μs), 1 A (1 ms), 0.5 A (1 s) |
Reverse Breakdown Voltage (I(BR) = 100 μA) | V(BR) | 70 V |
Reverse Voltage Leakage Current (VR = 70 V, TJ = 150°C) | IR | 50 μA |
Diode Capacitance (VR = 0, f = 1.0 MHz) | CD | 2.0 pF |
Forward Voltage (IF = 1.0 mA) | VF | 715 mV |
Reverse Recovery Time (IF = IR = 10 mA, RL = 100 Ω, IR(REC) = 1.0 mA) | trr | 6.0 ns |
Junction and Storage Temperature | TJ, Tstg | −55 to +150 °C |
Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RθJA | 625 °C/W |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- S prefix for automotive and other applications requiring unique site and control change requirements.
- Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring environmental sustainability.
- Common anode configuration in a dual switching diode setup.
- Low forward voltage drop and fast reverse recovery time.
- High reverse breakdown voltage and low reverse leakage current.
Applications
- Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Consumer electronics: Used in power supply circuits, voltage regulation, and signal processing.
- Industrial control systems: Applied in control circuits, protection circuits, and signal conditioning.
- Telecommunications: Utilized in communication equipment for signal switching and protection.
Q & A
- What is the maximum reverse voltage rating of the SBAW56WT1G diode?
The maximum reverse voltage rating is 70 V.
- What is the forward current rating of the SBAW56WT1G diode?
The forward current rating is 200 mA.
- Is the SBAW56WT1G diode RoHS compliant?
- What is the reverse recovery time of the SBAW56WT1G diode?
The reverse recovery time is 6.0 ns.
- What are the typical applications of the SBAW56WT1G diode?
It is commonly used in automotive systems, consumer electronics, industrial control systems, and telecommunications.
- What is the junction and storage temperature range of the SBAW56WT1G diode?
The junction and storage temperature range is −55 to +150 °C.
- What is the thermal resistance, junction-to-ambient, for the SBAW56WT1G diode on an FR-5 board?
The thermal resistance, junction-to-ambient, is 625 °C/W.
- Is the SBAW56WT1G diode AEC-Q101 qualified?
- What is the package type of the SBAW56WT1G diode?
The package type is SC-70 (SOT-323).
- How many devices are shipped per reel for the SBAW56WT1G diode?
3,000 devices are shipped per reel.