RB521S30T1G
  • Share:

onsemi RB521S30T1G

Manufacturer No:
RB521S30T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 30V 200MA SOD523
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The RB521S30T1G is a Schottky barrier diode produced by onsemi, designed for high-speed switching applications, circuit protection, and voltage clamping. This diode is packaged in a miniature SOD-523 surface mount package, making it ideal for hand-held and portable applications where space is limited. It is AEC-Q101 qualified and PPAP capable, ensuring its suitability for automotive and other applications requiring unique site and control change requirements. The device is Pb-free, halogen-free/BFR-free, and RoHS compliant.

Key Specifications

Characteristic Symbol Value Unit
Reverse Voltage VR 30 Vdc
Forward Current DC IF 200 mA
Peak Forward Surge Current IFSM 1.0 A
Forward Voltage (IF = 200 mA) VF 0.50 Vdc
Reverse Leakage (VR = 10 V) IR - 30.0 μA
Junction and Storage Temperature Range TJ, Tstg -55 to +125 °C
Thermal Resistance, Junction-to-Ambient RJA 635 °C/W
Total Device Dissipation (FR-5 Board, TA = 25°C) PD 200 mW
ESD Rating - Class 1C per Human Body Model -

Key Features

  • Extremely fast switching speed, making it suitable for high-speed applications.
  • Extremely low forward voltage (0.5 V max at IF = 200 mA), reducing conduction loss.
  • Low reverse current.
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other critical applications.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.

Applications

  • High-speed switching applications.
  • Circuit protection.
  • Voltage clamping.
  • Hand-held and portable devices where space is limited.
  • Automotive and other applications requiring unique site and control change requirements.

Q & A

  1. What is the maximum reverse voltage of the RB521S30T1G?

    The maximum reverse voltage is 30 Vdc.

  2. What is the forward current rating of the RB521S30T1G?

    The forward current DC rating is 200 mA.

  3. What is the peak forward surge current of the RB521S30T1G?

    The peak forward surge current is 1.0 A.

  4. What is the typical forward voltage of the RB521S30T1G at 200 mA?

    The typical forward voltage is 0.50 Vdc at IF = 200 mA.

  5. Is the RB521S30T1G RoHS compliant?
  6. What is the junction and storage temperature range of the RB521S30T1G?

    The junction and storage temperature range is -55 to +125°C.

  7. What is the thermal resistance, junction-to-ambient of the RB521S30T1G?

    The thermal resistance, junction-to-ambient is 635°C/W.

  8. What are some common applications of the RB521S30T1G?

    Common applications include high-speed switching, circuit protection, voltage clamping, and use in hand-held and portable devices.

  9. Is the RB521S30T1G suitable for automotive applications?
  10. What is the ESD rating of the RB521S30T1G?

    The ESD rating is Class 1C per Human Body Model.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:500 mV @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:30 µA @ 10 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:SC-79, SOD-523
Supplier Device Package:SOD-523
Operating Temperature - Junction:-55°C ~ 125°C
0 Remaining View Similar

In Stock

$0.19
3,957

Please send RFQ , we will respond immediately.

Same Series
RB521S30T1G
RB521S30T1G
DIODE SCHOTTKY 30V 200MA SOD523
NSVRB521S30T1G
NSVRB521S30T1G
DIODE SCHOTTKY 30V 200MA SOD523
RB521S30T1
RB521S30T1
DIODE SCHOTTKY 30V 200MA SOD523

Similar Products

Part Number RB521S30T1G RB521S30T5G RB520S30T1G RB521S30T1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V 30 V 30 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 500 mV @ 200 mA 500 mV @ 200 mA 600 mV @ 200 mA 500 mV @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 30 µA @ 10 V 30 µA @ 10 V 1 µA @ 10 V 30 µA @ 10 V
Capacitance @ Vr, F - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-79, SOD-523 SC-79, SOD-523 SC-79, SOD-523 SC-79, SOD-523
Supplier Device Package SOD-523 SOD-523 SOD-523 SOD-523
Operating Temperature - Junction -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 150°C -55°C ~ 125°C

Related Product By Categories

PMEG4010ETR/B115
PMEG4010ETR/B115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
PMEG2010ER,115
PMEG2010ER,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A CFP3
PMEG6010ELRX
PMEG6010ELRX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A CFP3
STPS2H100ZFY
STPS2H100ZFY
STMicroelectronics
DIODE SCHOTTKY 100V 2A SOD123F
MUR460-T
MUR460-T
Diodes Incorporated
FRED GPP RECTIFIER DO-201AD T&R
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
MURS120-F1-0000HF
MURS120-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 200V 1A DO214AC
MBRS330T3
MBRS330T3
onsemi
DIODE SCHOTTKY 30V 4A SMC
MUR120-E3/73
MUR120-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
BAT54T-HF
BAT54T-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23

Related Product By Brand

ESD9D5.0ST5G
ESD9D5.0ST5G
onsemi
TVS DIODE 5VWM 13.5VC SOD923
NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
MMSZ11T1G
MMSZ11T1G
onsemi
DIODE ZENER 11V 500MW SOD123
NTK3043NT1G
NTK3043NT1G
onsemi
MOSFET N-CH 20V 210MA SOT723
FDMS86350ET80
FDMS86350ET80
onsemi
MOSFET N-CH 80V 25A/198A POWER56
2SK4177-DL-1E
2SK4177-DL-1E
onsemi
MOSFET N-CH 1500V 2A TO263-2
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
MC74VHC04DTR2G
MC74VHC04DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
MC74HC00ANG
MC74HC00ANG
onsemi
IC GATE NAND 4CH 2-INP 14DIP
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
NCP177AMX330TCG
NCP177AMX330TCG
onsemi
IC REG LINEAR 3.3V 500MA 4XDFN