PN2907ATF
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onsemi PN2907ATF

Manufacturer No:
PN2907ATF
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 60V 0.8A TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PN2907ATF is a 60 V PNP bipolar transistor produced by onsemi, designed for general-purpose amplifier and switch applications. This transistor is part of the PN2907A series and is housed in a TO-92-3 package. It is suitable for a wide range of applications requiring up to 500 mA of current. The PN2907ATF is known for its high DC current gain and high-current gain bandwidth product, making it a versatile component in electronic circuits.

Key Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) -60 V
Collector-Base Voltage (VCBO) -60 V
Emitter-Base Voltage (VEBO) -5.0 V
Collector Current - Continuous (IC) -800 mA
Operating and Storage Junction Temperature Range (TJ, TSTG) -55 to +150 °C
Total Device Dissipation (PD) 625 mW
Derate Above 25°C 5.0 mW/°C
Thermal Resistance, Junction to Case (RθJC) 83.3 °C/W
Thermal Resistance, Junction to Ambient (RθJA) 200 °C/W
DC Current Gain (hFE) 100 ~ 300
Current Gain Bandwidth Product (fT) 200 MHz (Minimum)
Turn-On Time (ton) 45 ns
Turn-Off Time (toff) 100 ns

Key Features

  • High DC Current Gain (hFE) Range: 100 ~ 300
  • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum)
  • Fast Switching Times: Maximum Turn-On Time (ton) of 45 ns and Maximum Turn-Off Time (toff) of 100 ns
  • Pb-Free Device
  • High Collector Current Capability: Up to 800 mA
  • Wide Operating Temperature Range: -55°C to +150°C

Applications

  • General-Purpose Amplifier
  • Switching Applications
  • Low-Power Surface Mount Applications
  • Space-Constrained Systems (especially with the SOT-223 package option)

Q & A

  1. What is the maximum collector-emitter voltage of the PN2907ATF?

    The maximum collector-emitter voltage (VCEO) is -60 V.

  2. What is the typical DC current gain (hFE) of the PN2907ATF?

    The DC current gain (hFE) ranges from 100 to 300.

  3. What is the maximum collector current of the PN2907ATF?

    The maximum continuous collector current (IC) is -800 mA.

  4. What is the thermal resistance, junction to ambient (RθJA), of the PN2907ATF?

    The thermal resistance, junction to ambient (RθJA), is 200 °C/W.

  5. What are the typical applications of the PN2907ATF?

    The PN2907ATF is typically used as a general-purpose amplifier or switch in various electronic circuits.

  6. What is the package type of the PN2907ATF?

    The PN2907ATF is housed in a TO-92-3 package.

  7. Is the PN2907ATF a Pb-Free device?
  8. What is the minimum current gain bandwidth product (fT) of the PN2907ATF?

    The minimum current gain bandwidth product (fT) is 200 MHz.

  9. What are the maximum turn-on and turn-off times of the PN2907ATF?

    The maximum turn-on time (ton) is 45 ns, and the maximum turn-off time (toff) is 100 ns.

  10. What is the operating temperature range of the PN2907ATF?

    The operating and storage junction temperature range is -55°C to +150°C.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):800 mA
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max):20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:625 mW
Frequency - Transition:200MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3
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Similar Products

Part Number PN2907ATF PN2907ATFR PN2907TF PN2907ATA
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Active
Transistor Type PNP PNP PNP PNP
Current - Collector (Ic) (Max) 800 mA 800 mA 800 mA 800 mA
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V 40 V 60 V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA 1.6V @ 50mA, 500mA 1.6V @ 50mA, 500mA 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max) 20nA (ICBO) 20nA (ICBO) 20nA (ICBO) 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 100 @ 150mA, 10V 100 @ 150mA, 10V 100 @ 150mA, 10V
Power - Max 625 mW 625 mW 625 mW 625 mW
Frequency - Transition 200MHz 200MHz - 200MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3 TO-92-3 TO-92-3

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