Overview
The NSVR1020MW2T1G Schottky Barrier Diode, produced by onsemi, is a high-performance component packaged in the SOD-323 format. This diode is distinguished by its extremely low forward voltage (Vf) performance, which enables it to handle high current in a very small package. This characteristic makes the device ideal for various applications, including blocking diodes in charging circuits, discrete buck converters, and discrete boost converters. The low Vf drop of the Schottky diode enhances the overall efficiency of the circuit by reducing power consumption in the forward mode.
Key Specifications
Characteristic | Symbol | Value | Unit |
---|---|---|---|
Reverse Voltage | VR | 20 | Vdc |
Peak Reverse Voltage | VRM | 30 | V |
Forward Current (DC) Continuous | IF | 1 | A |
Forward Current (t = 8.3 ms Half Sinewave) | IF | 5 | A |
Repetitive Forward Current (period = 1.5 s, Duty Cycle = 66.7%) | IFRM | 2 | A |
Junction Temperature | TJ | 125 | °C |
Storage Temperature Range | Tstg | -55 to +150 | °C |
Forward Voltage (IF = 10 mAdc) | VF | 0.24 | Vdc |
Total Capacitance (VR = 5.0 V, f = 1.0 MHz) | CT | 25-29 | pF |
Reverse Leakage (VR = 15 V) | IR | 40 | µAdc |
Key Features
- Low Forward Voltage: 0.24 Volts (Typ) @ IF = 10 mAdc, which enhances the efficiency of the circuit by consuming less power in the forward mode.
- High Current Capability: Capable of handling high current in a very small package.
- ESD Rating: Human Body Model: CLASS 3B, Machine Model: C.
- Pb-Free Package: Halogen Free/BFR Free and RoHS Compliant.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
Applications
- Blocking Diode in Charging Applications: Ideal for use in charging circuits due to its low Vf and high current handling capability.
- Discrete Buck Converters: Enhances efficiency in buck conversion circuits.
- Discrete Boost Converters: Improves efficiency in boost conversion circuits.
- Automotive and Industrial Applications: AEC-Q101 qualified, making it suitable for automotive and other demanding applications.
Q & A
- What is the typical forward voltage of the NSVR1020MW2T1G Schottky diode?
The typical forward voltage is 0.24 Volts at IF = 10 mAdc.
- What is the maximum continuous forward current of the NSVR1020MW2T1G?
The maximum continuous forward current is 1 A.
- What is the peak reverse voltage rating of the NSVR1020MW2T1G?
The peak reverse voltage rating is 30 V.
- Is the NSVR1020MW2T1G ESD rated?
Yes, it has an ESD rating of Human Body Model: CLASS 3B and Machine Model: C.
- What is the junction temperature range of the NSVR1020MW2T1G?
The junction temperature range is up to 125°C.
- Is the NSVR1020MW2T1G RoHS compliant?
Yes, it is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
- What are the typical applications of the NSVR1020MW2T1G?
Typical applications include blocking diodes in charging circuits, discrete buck converters, and discrete boost converters.
- Is the NSVR1020MW2T1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- What is the total capacitance of the NSVR1020MW2T1G at VR = 5.0 V and f = 1.0 MHz?
The total capacitance is 25-29 pF).
- What is the reverse leakage current of the NSVR1020MW2T1G at VR = 15 V?
The reverse leakage current is 40 µAdc).