Overview
The NSV40501UW3T2G is a high-performance NPN bipolar junction transistor (BJT) manufactured by onsemi, part of their e2PowerEdge family. This transistor is designed to offer low collector-emitter saturation voltage (VCE(sat)) and high current handling capabilities, making it suitable for a variety of power management and switching applications.
Key Specifications
| Parameter | Value |
|---|---|
| Collector-Base Voltage (Vcb) | 40 V |
| Collector-Emitter Voltage (Vce) | 40 V |
| Emitter-Base Voltage (Vebo) | 6 V |
| Collector Current (Ic) | 5.0 A |
| Collector-Emitter Saturation Voltage (Vce(sat)) | 150 mV |
| Power Dissipation (Pd) | 875 mW |
| Gain Bandwidth Product (ft) | 150 MHz |
| Package Type | W-DFN-3 (2x2 mm) |
Key Features
- Low collector-emitter saturation voltage (VCE(sat)) of 150 mV, enhancing efficiency in switching applications.
- High collector current of up to 5.0 A, suitable for high-power applications.
- Compact W-DFN-3 (2x2 mm) package, ideal for space-constrained designs.
- High gain bandwidth product (ft) of 150 MHz, ensuring good high-frequency performance.
- RoHS compliant, making it environmentally friendly.
Applications
The NSV40501UW3T2G is versatile and can be used in various applications, including:
- Power management and switching circuits.
- Automotive systems requiring high reliability and efficiency.
- Industrial control and automation.
- Consumer electronics where space and power efficiency are critical.
Q & A
- What is the maximum collector current of the NSV40501UW3T2G?
The maximum collector current is 5.0 A. - What is the collector-emitter saturation voltage (VCE(sat)) of this transistor?
The VCE(sat) is 150 mV. - What is the power dissipation (Pd) of the NSV40501UW3T2G?
The power dissipation is 875 mW. - What package type does the NSV40501UW3T2G come in?
The package type is W-DFN-3 (2x2 mm). - Is the NSV40501UW3T2G RoHS compliant?
Yes, it is RoHS compliant. - What is the gain bandwidth product (ft) of this transistor?
The gain bandwidth product is 150 MHz. - What are some common applications for the NSV40501UW3T2G?
Common applications include power management, automotive systems, industrial control, and consumer electronics. - What is the maximum collector-base voltage (Vcb) of the NSV40501UW3T2G?
The maximum collector-base voltage is 40 V. - What is the emitter-base voltage (Vebo) of this transistor?
The emitter-base voltage is 6 V. - Who manufactures the NSV40501UW3T2G?
The NSV40501UW3T2G is manufactured by onsemi.
