NSS30100LT1G
  • Share:

onsemi NSS30100LT1G

Manufacturer No:
NSS30100LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 30V 1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NSS30100LT1G is a 30 V, 2 A, low VCE(sat) PNP transistor manufactured by onsemi. This bipolar junction transistor (BJT) is designed to offer high performance and reliability in various electronic applications. It features a low saturation voltage (VCE(sat)), making it suitable for applications requiring minimal power loss and high efficiency.

Key Specifications

ParameterValue
Collector-Emitter Voltage (VCE)30 V
Collector Current (IC)2 A
Saturation Voltage (VCE(sat))100 mV @ 500 mA, 2 V @ 1 A
Package TypeSOT-23
RoHS ComplianceYes

Key Features

  • Low saturation voltage (VCE(sat)) for reduced power loss and increased efficiency.
  • High collector current (IC) of 2 A, suitable for demanding applications.
  • Collector-emitter voltage (VCE) of 30 V, providing robust performance under various conditions.
  • SOT-23 package, offering a compact and space-efficient design.
  • RoHS compliant, ensuring environmental sustainability.

Applications

The NSS30100LT1G transistor is versatile and can be used in a variety of applications, including:

  • Power switching and amplification in automotive systems.
  • Industrial control and automation.
  • Consumer electronics requiring high current handling.
  • Audio and video equipment where low distortion is critical.

Q & A

  1. What is the maximum collector-emitter voltage of the NSS30100LT1G transistor?
    The maximum collector-emitter voltage is 30 V.
  2. What is the maximum collector current of the NSS30100LT1G transistor?
    The maximum collector current is 2 A.
  3. What is the typical saturation voltage (VCE(sat)) of the NSS30100LT1G transistor?
    The typical saturation voltage is 100 mV @ 500 mA, 2 V @ 1 A.
  4. What package type does the NSS30100LT1G transistor come in?
    The NSS30100LT1G transistor comes in a SOT-23 package.
  5. Is the NSS30100LT1G transistor RoHS compliant?
    Yes, the NSS30100LT1G transistor is RoHS compliant.
  6. What are some common applications of the NSS30100LT1G transistor?
    Common applications include power switching and amplification in automotive systems, industrial control and automation, consumer electronics, and audio/video equipment.
  7. Why is the low VCE(sat) important in the NSS30100LT1G transistor?
    The low VCE(sat) reduces power loss and increases efficiency in the transistor.
  8. Can the NSS30100LT1G transistor be used in high-current applications?
    Yes, the NSS30100LT1G transistor can handle high currents up to 2 A.
  9. Is the NSS30100LT1G transistor suitable for use in high-voltage applications?
    Yes, it is suitable for applications with up to 30 V collector-emitter voltage.
  10. What are the benefits of using a SOT-23 package for the NSS30100LT1G transistor?
    The SOT-23 package offers a compact and space-efficient design, making it ideal for applications where space is limited.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 200mA, 2A
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 500mA, 2V
Power - Max:310 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
0 Remaining View Similar

In Stock

$0.46
1,100

Please send RFQ , we will respond immediately.

Similar Products

Part Number NSS30100LT1G NSS30101LT1G NSV30100LT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Transistor Type PNP NPN -
Current - Collector (Ic) (Max) 1 A 1 A -
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V -
Vce Saturation (Max) @ Ib, Ic 650mV @ 200mA, 2A 200mV @ 100mA, 1A -
Current - Collector Cutoff (Max) 100nA 100nA -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA, 2V 300 @ 500mA, 5V -
Power - Max 310 mW 310 mW -
Frequency - Transition 100MHz 100MHz -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) -

Related Product By Categories

PZT2907AT1G
PZT2907AT1G
onsemi
TRANS PNP 60V 0.6A SOT223
TIP29C
TIP29C
STMicroelectronics
TRANS NPN 100V 1A TO220
BC857BWE6327
BC857BWE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BCP56-16/DG/B2115
BCP56-16/DG/B2115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
ST13003N
ST13003N
STMicroelectronics
TRANS NPN 400V 1A SOT32-3
2PB709ARW,115
2PB709ARW,115
NXP USA Inc.
NOW NEXPERIA 2PB709ARW - SMALL S
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
BST52,135
BST52,135
Nexperia USA Inc.
TRANS NPN DARL 80V 1A SOT89
PMBT2222A/DG,215
PMBT2222A/DG,215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC856AW-7-F
BC856AW-7-F
Diodes Incorporated
TRANS PNP 65V 0.1A SOT323
BCX56-16115
BCX56-16115
NXP USA Inc.
NOW NEXPERIA SMALL SIGNAL BIPOLA
TIP126-BP
TIP126-BP
Micro Commercial Co
TRANS PNP DARL 80V 5A TO220AB

Related Product By Brand

MR2835SKG
MR2835SKG
onsemi
TVS DIODE 23VWM TOP CAN
BAV70_D87Z
BAV70_D87Z
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
2N6284G
2N6284G
onsemi
TRANS NPN DARL 100V 20A TO204
FDS8935
FDS8935
onsemi
MOSFET 2P-CH 80V 2.1A 8SOIC
FDWS9508L_F085
FDWS9508L_F085
onsemi
MOSFET P-CH 40V 80A 8PQFN
MC74HC04AFL1
MC74HC04AFL1
onsemi
IC INVERTER 6CH 1-INP SOEIAJ-14
FAN3224TMX-F085
FAN3224TMX-F085
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
NCV7719DQR2G
NCV7719DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
NCP1593AMNTWG
NCP1593AMNTWG
onsemi
IC REG BUCK ADJUSTABLE 3A 10DFN
NCP160AMX330TBG
NCP160AMX330TBG
onsemi
IC REG LINEAR 3.3V 250MA 4XDFN
NCP715SQ33T2G
NCP715SQ33T2G
onsemi
IC REG LINEAR 3.3V 50MA SC88A