Overview
The NSS30101LT1G is a bipolar junction transistor (BJT) produced by onsemi. It is an NPN transistor designed for low-power surface mount applications and is housed in the SOT-23-3 (TO-236) package. This transistor is suitable for general-purpose amplifier applications due to its low VCE(sat) and high current handling capabilities.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Polarity | NPN | |
| Collector-Emitter Voltage (V(Br)Ceo) | 30 | V |
| DC Collector Current (IC) | 1 | A |
| Transition Frequency (fT) | 100 | MHz |
| Power Dissipation (Pd) | 310 | mW |
| Package Type | SOT-23-3 (TO-236) |
Key Features
- Low VCE(sat) for reduced power consumption
- High current handling capability of up to 1 A
- High transition frequency of 100 MHz, suitable for high-frequency applications
- Compact SOT-23-3 (TO-236) surface mount package for space-efficient designs
- General-purpose amplifier applications
Applications
- General-purpose amplifier circuits
- Low-power switching applications
- Audio amplifiers
- Automotive and industrial control systems
- Other high-frequency applications requiring low VCE(sat) and high current handling
Q & A
- What is the transistor polarity of the NSS30101LT1G?
The NSS30101LT1G is an NPN transistor.
- What is the maximum collector-emitter voltage (V(Br)Ceo) of the NSS30101LT1G?
The maximum collector-emitter voltage is 30 V.
- What is the DC collector current rating of the NSS30101LT1G?
The DC collector current rating is 1 A.
- What is the transition frequency (fT) of the NSS30101LT1G?
The transition frequency is 100 MHz.
- What is the power dissipation (Pd) of the NSS30101LT1G?
The power dissipation is 310 mW.
- In what package is the NSS30101LT1G housed?
The NSS30101LT1G is housed in the SOT-23-3 (TO-236) package.
- What are some typical applications of the NSS30101LT1G?
Typical applications include general-purpose amplifier circuits, low-power switching applications, audio amplifiers, and automotive and industrial control systems.
- Why is the NSS30101LT1G suitable for high-frequency applications?
The NSS30101LT1G is suitable for high-frequency applications due to its high transition frequency of 100 MHz.
- What is the advantage of the low VCE(sat) in the NSS30101LT1G?
The low VCE(sat) reduces power consumption in the transistor.
- Is the NSS30101LT1G suitable for space-constrained designs?
Yes, the NSS30101LT1G is suitable for space-constrained designs due to its compact SOT-23-3 (TO-236) package.
