NSS20300MR6T1G
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onsemi NSS20300MR6T1G

Manufacturer No:
NSS20300MR6T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 20V 3A 6TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NSS20300MR6T1G is a 20 V, 5 A, low VCE(sat) PNP transistor from onsemi's e2PowerEdge family. This miniature surface mount device is designed for low voltage, high speed switching applications, offering ultra-low saturation voltage and high current gain capability. It is particularly suited for efficient energy control in various electronic devices.

Key Specifications

CharacteristicSymbolMinTypicalMaxUnit
Collector-Emitter VoltageVCEO---20Vdc
Collector-Base VoltageVCBO---30Vdc
Emitter-Base VoltageVEB0---6.0Vdc
Collector Current - ContinuousIC---3.0Adc
Collector Current - PeakICM---5.0A
DC Current Gain (hFE)-100230-400-
Collector-Emitter Saturation Voltage (VCE(sat))--0.127-0.320V
Base-Emitter Saturation Voltage (VBE(sat))--0.85-V
Junction and Storage Temperature RangeTJ, Tstg-55-+150°C

Key Features

  • Ultra-low saturation voltage (VCE(sat))
  • High current gain capability
  • Miniature surface mount package (TSOP-6)
  • Pb-free package
  • High speed switching capability
  • Suitable for direct drive from PMU’s control outputs
  • Ideal for analog amplifiers due to linear gain (Beta)

Applications

The NSS20300MR6T1G is used in a variety of applications including:

  • DC-DC converters
  • Power management in portable and battery-powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras, and MP3 players
  • Low voltage motor controls in mass storage products like disc drives and tape drives
  • Automotive applications such as air bag deployment and instrument clusters

Q & A

  1. What is the maximum collector-emitter voltage of the NSS20300MR6T1G?
    The maximum collector-emitter voltage is -20 Vdc.
  2. What is the typical DC current gain (hFE) of this transistor?
    The typical DC current gain is between 100 and 400.
  3. What is the collector-emitter saturation voltage (VCE(sat)) at a collector current of 1 A?
    The collector-emitter saturation voltage is approximately -0.127 V at a collector current of 1 A.
  4. What is the base-emitter saturation voltage (VBE(sat))?
    The base-emitter saturation voltage is approximately -0.85 V.
  5. What is the junction and storage temperature range for this transistor?
    The junction and storage temperature range is from -55°C to +150°C.
  6. What type of package does the NSS20300MR6T1G come in?
    The transistor comes in a TSOP-6 package.
  7. Is the NSS20300MR6T1G Pb-free?
    Yes, the NSS20300MR6T1G is Pb-free.
  8. What are some common applications of the NSS20300MR6T1G?
    Common applications include DC-DC converters, power management in portable devices, low voltage motor controls, and automotive applications.
  9. Can the NSS20300MR6T1G be driven directly from PMU’s control outputs?
    Yes, the high current gain allows it to be driven directly from PMU’s control outputs.
  10. Is the NSS20300MR6T1G suitable for analog amplifiers?
    Yes, it is suitable for analog amplifiers due to its linear gain (Beta).

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):20 V
Vce Saturation (Max) @ Ib, Ic:320mV @ 20mA, 2A
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1.5A, 2V
Power - Max:545 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:6-TSOP
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