NSS12100M3T5G
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onsemi NSS12100M3T5G

Manufacturer No:
NSS12100M3T5G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 12V 1A SOT723
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The NSS12100M3T5G is a low VCE(sat) PNP transistor from onsemi's e2PowerEdge family. This transistor is designed as a miniature surface mount device, offering ultra-low saturation voltage (VCE(sat)) and high current handling capabilities. It is particularly suited for applications requiring low power loss and high efficiency.

Key Specifications

ParameterValue
Transistor TypePNP
ConfigurationSINGLE
Maximum Collector-Emitter Voltage (Vce)12 V
Maximum Collector Current (Ic)1.0 A
Saturation Voltage (VCE(sat))Ultra Low
Maximum Power Dissipation (Pd)0.46 W
Package TypeSOT-23
Surface MountYES

Key Features

  • Ultra-low saturation voltage (VCE(sat)) for reduced power loss and increased efficiency.
  • High current handling capability up to 1.0 A.
  • Miniature SOT-23 surface mount package for compact designs.
  • Low thermal resistance, enhancing thermal performance.
  • High reliability and durability.

Applications

The NSS12100M3T5G is suitable for a variety of applications, including:

  • Power management and switching circuits.
  • Audio and video amplifiers.
  • Automotive and industrial control systems.
  • Consumer electronics such as smartphones, tablets, and laptops.
  • General-purpose amplification and switching.

Q & A

  1. What is the maximum collector current of the NSS12100M3T5G?
    The maximum collector current is 1.0 A.
  2. What is the package type of the NSS12100M3T5G?
    The package type is SOT-23.
  3. What is the maximum power dissipation of the NSS12100M3T5G?
    The maximum power dissipation is 0.46 W.
  4. What is the transistor type of the NSS12100M3T5G?
    The transistor type is PNP.
  5. What are the key benefits of the ultra-low VCE(sat) in the NSS12100M3T5G?
    The ultra-low VCE(sat) reduces power loss and increases efficiency in the circuit.
  6. Is the NSS12100M3T5G suitable for high-current applications?
    Yes, it is suitable for high-current applications up to 1.0 A.
  7. What are some common applications for the NSS12100M3T5G?
    Common applications include power management, audio and video amplifiers, automotive and industrial control systems, and consumer electronics.
  8. What is the maximum collector-emitter voltage of the NSS12100M3T5G?
    The maximum collector-emitter voltage is 12 V.
  9. Is the NSS12100M3T5G a surface mount device?
    Yes, it is a surface mount device.
  10. Where can I find detailed specifications for the NSS12100M3T5G?
    Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like Avnet, Mouser, and Digi-Key.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):12 V
Vce Saturation (Max) @ Ib, Ic:410mV @ 100mA, 1A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 500mA, 2V
Power - Max:625 mW
Frequency - Transition:- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-723
Supplier Device Package:SOT-723
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