NSR01L30NXT5G
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onsemi NSR01L30NXT5G

Manufacturer No:
NSR01L30NXT5G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 30V 100MA 2DSN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NSR01L30NXT5G is a Schottky Barrier Diode produced by onsemi, optimized for low forward voltage drop and low leakage current. This diode is packaged in the DSN2 (Dual Silicon No-lead) package, which is a chip-level package utilizing solderable metal contacts, similar to DFN style packages. This packaging enables 100% utilization of the package area for active silicon, offering significant performance per board area advantages compared to products in plastic molded packages. The low thermal resistance of this diode allows designers to achieve higher efficiency and meet reduced space requirements.

Key Specifications

Rating Symbol Value Unit
Reverse Voltage VR 30 V
Forward Current (DC) IF 100 mA
Forward Surge Current (60 Hz @ 1 cycle) IFSM 4.0 A
ESD Rating - Human Body Model ESD >8.0 kV kV
ESD Rating - Machine Model ESD >400 V V
Forward Voltage (IF = 10 mA) VF 0.40 V
Forward Voltage (IF = 100 mA) VF 0.53 V
Reverse Leakage (VR = 10 V) IR 0.2 μA μA
Total Capacitance (VR = 5.0 V, f = 1 MHz) CT 7.0 pF pF
Thermal Resistance (Junction-to-Ambient) RθJA 400 °C/W °C/W
Total Power Dissipation @ TA = 25°C PD 312 mW mW
Storage Temperature Range Tstg -40 to +125 °C °C
Junction Temperature TJ +150 °C °C

Key Features

  • Very Low Forward Voltage Drop − 400 mV @ 10 mA
  • Low Reverse Current − 0.2 μA @ 10 V VR
  • 100 mA of Continuous Forward Current
  • ESD Rating − Human Body Model: Class 3B, Machine Model: Class C
  • Power Dissipation of 312 mW with Minimum Trace
  • Very High Switching Speed
  • Low Capacitance − CT = 7 pF
  • This is a Halide-Free Device
  • This is a Pb-Free Device

Applications

  • LCD and Keypad Backlighting
  • Camera Photo Flash
  • Buck and Boost dc-dc Converters
  • Reverse Voltage and Current Protection
  • Clamping & Protection
  • Mobile Handsets
  • MP3 Players
  • Digital Camera and Camcorders
  • Notebook PCs & PDAs
  • GPS

Q & A

  1. What is the maximum reverse voltage rating of the NSR01L30NXT5G?

    The maximum reverse voltage rating is 30 V.

  2. What is the continuous forward current rating of the NSR01L30NXT5G?

    The continuous forward current rating is 100 mA.

  3. What is the typical forward voltage drop at 10 mA for the NSR01L30NXT5G?

    The typical forward voltage drop at 10 mA is 400 mV.

  4. What is the ESD rating for the NSR01L30NXT5G according to the Human Body Model?

    The ESD rating according to the Human Body Model is Class 3B (>8.0 kV).

  5. What is the thermal resistance (Junction-to-Ambient) for the NSR01L30NXT5G?

    The thermal resistance (Junction-to-Ambient) is 400 °C/W.

  6. Is the NSR01L30NXT5G a Pb-Free and Halide-Free device?
  7. What are some typical applications for the NSR01L30NXT5G?

    Typical applications include LCD and Keypad Backlighting, Camera Photo Flash, Buck and Boost dc-dc Converters, Reverse Voltage and Current Protection, and Clamping & Protection.

  8. What markets does the NSR01L30NXT5G serve?

    The NSR01L30NXT5G serves markets such as Mobile Handsets, MP3 Players, Digital Camera and Camcorders, Notebook PCs & PDAs, and GPS.

  9. What is the storage temperature range for the NSR01L30NXT5G?

    The storage temperature range is -40 to +125 °C.

  10. What is the junction temperature rating for the NSR01L30NXT5G?

    The junction temperature rating is +150 °C.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):100mA (DC)
Voltage - Forward (Vf) (Max) @ If:530 mV @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:3 µA @ 30 V
Capacitance @ Vr, F:7pF @ 5V, 1MHz
Mounting Type:Surface Mount
Package / Case:0201 (0603 Metric)
Supplier Device Package:2-DSN (0.60x0.30)
Operating Temperature - Junction:150°C (Max)
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Similar Products

Part Number NSR01L30NXT5G NSR02L30NXT5G NSR01F30NXT5G NSR01L30MXT5G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V 30 V 30 V
Current - Average Rectified (Io) 100mA (DC) 200mA (DC) 100mA (DC) 100mA (DC)
Voltage - Forward (Vf) (Max) @ If 530 mV @ 100 mA 580 mV @ 200 mA 500 mV @ 100 mA 460 mV @ 10 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 3 µA @ 30 V 3 µA @ 30 V 50 µA @ 30 V 500 nA @ 30 V
Capacitance @ Vr, F 7pF @ 5V, 1MHz 7pF @ 5V, 1MHz 7pF @ 5V, 1MHz -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 0201 (0603 Metric) 0201 (0603 Metric) 0201 (0603 Metric) 0201 (0603 Metric)
Supplier Device Package 2-DSN (0.60x0.30) 2-DSN (0.60x0.30) 2-DSN (0.60x0.30) 2-X3DFN (0.6x0.3) (0201)
Operating Temperature - Junction 150°C (Max) 150°C (Max) 125°C (Max) 150°C (Max)

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